JP2605720B2 - Method for manufacturing thin-film EL panel - Google Patents
Method for manufacturing thin-film EL panelInfo
- Publication number
- JP2605720B2 JP2605720B2 JP62159987A JP15998787A JP2605720B2 JP 2605720 B2 JP2605720 B2 JP 2605720B2 JP 62159987 A JP62159987 A JP 62159987A JP 15998787 A JP15998787 A JP 15998787A JP 2605720 B2 JP2605720 B2 JP 2605720B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- panel
- emitting layer
- light emitting
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 title claims description 9
- 238000000034 method Methods 0.000 title claims description 6
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000010408 film Substances 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 8
- 150000003863 ammonium salts Chemical class 0.000 claims description 2
- 239000011159 matrix material Substances 0.000 claims description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims 2
- 125000000217 alkyl group Chemical group 0.000 claims 1
- 238000005566 electron beam evaporation Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- JGIATAMCQXIDNZ-UHFFFAOYSA-N calcium sulfide Chemical compound [Ca]=S JGIATAMCQXIDNZ-UHFFFAOYSA-N 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 241001175904 Labeo bata Species 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- BJXXCWDIBHXWOH-UHFFFAOYSA-N barium(2+);oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[Ba+2].[Ba+2].[Ba+2].[Ba+2].[Ba+2].[Ta+5].[Ta+5].[Ta+5].[Ta+5] BJXXCWDIBHXWOH-UHFFFAOYSA-N 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- QENHCSSJTJWZAL-UHFFFAOYSA-N magnesium sulfide Chemical compound [Mg+2].[S-2] QENHCSSJTJWZAL-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 150000004763 sulfides Chemical class 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明はキャラクターやグラフィックスなどの表示に
用いる薄膜ELパネルに関するものであり、詳しくは薄膜
ELパネルの安定な製造方法に関する。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin-film EL panel used for displaying characters, graphics, and the like.
The present invention relates to a stable manufacturing method of an EL panel.
従来の技術 従来より電場発光蛍光体を用いた固体映像表示装置と
してＸ−Ｙマトリクス表示装置が知られている。この装
置は電場発光層の両面に水平平行電極群と垂直平行電極
群とを互いに直行するように配置し、それぞれの電極群
の接続された給電線により切り換え装置を通して信号を
加えて両電極の交点部分の電場発光層を発光させ（この
交点の発光部分面を絵素と称する）、発光した絵素の組
合せによって文字記号、図形等を表示させるものであ
る。2. Description of the Related Art Conventionally, an XY matrix display device is known as a solid-state image display device using an electroluminescent phosphor. In this device, a horizontal parallel electrode group and a vertical parallel electrode group are arranged on both sides of an electroluminescent layer so as to be perpendicular to each other, and a signal is applied through a switching device by a feeder line connected to each electrode group, and an intersection of both electrodes is applied. A part of the electroluminescent layer is made to emit light (the light emitting part surface at the intersection is called a picture element), and a character symbol, a graphic, or the like is displayed by a combination of the emitted picture elements.
ここで用いられる固体映像表示装置（以下薄膜ELパネ
ルと称する）は、表示板としてガラスを用い、その上に
透明平行電極群を形成し、その上に第１絶縁層、EL発光
層、第２絶縁層を順次積層しさらにその上に背面平行電
極群を下層の透明平行電極群に直行する配置で積層して
形成する。一般に透明平行電極としては平滑なガラス基
板上に酸化錫を被着するなどにより形成される。これに
直行する背面電極を形成する方法としては、先ずはじめ
にAl薄膜が真空蒸着などによって第２絶縁層上に形成さ
れる。その後フォトリソグラフィー法を用いてストライ
プ状透明電極と直交するようにレジストパターンを形成
する。それをマスクとしてリン酸・硝酸・酢酸の混液か
ら成るエッチャントによってAl膜をエッチングすること
が行われていた。The solid-state image display device (hereinafter, referred to as a thin film EL panel) used here uses glass as a display plate, forms a transparent parallel electrode group thereon, and forms a first insulating layer, an EL light emitting layer, An insulating layer is sequentially laminated, and a back parallel electrode group is further laminated thereon so as to be perpendicular to the lower transparent parallel electrode group. Generally, a transparent parallel electrode is formed by depositing tin oxide on a smooth glass substrate. As a method of forming the back electrode perpendicular to this, first, an Al thin film is formed on the second insulating layer by vacuum deposition or the like. Thereafter, a resist pattern is formed by photolithography so as to be orthogonal to the stripe-shaped transparent electrodes. Using this as a mask, the Al film was etched with an etchant composed of a mixture of phosphoric acid, nitric acid, and acetic acid.
発明が解決しようとする問題点 一般に硫化カルシウムや硫化マグネシウムなどのアル
カリ土類金属の硫化物は酸に特に弱いという性質を持っ
ているため、それらを主成分とするEL発光層を設けてい
るパネルにおいては、Al膜をストライプ状に加工するエ
ッチング時に、第２絶縁層のピンホールを介して発光層
の露出している部分がエッチャントに侵され、パネルが
不良になる場合が多くみられた。Problems to be Solved by the Invention In general, sulfides of alkaline earth metals such as calcium sulfide and magnesium sulfide have a property that they are particularly vulnerable to acids, and thus a panel provided with an EL light-emitting layer containing these as a main component. In, in the etching for processing the Al film into a stripe shape, the exposed portion of the light emitting layer via the pinhole of the second insulating layer was attacked by the etchant, and the panel was often defective.
問題点を解決するための手段 Al膜を第２絶縁層上に全面に積層した後フォトリソグ
ラフィー技術を用いてレジストパターンを形成しエッチ
ングする工程において、Al膜のエッチングを（RmH
4-mN）OH（ｍ＝0,1,2,3,4）で示されるアンモニウム塩
を主成分とするエッチャントを用いる。Means for Solving the Problems In the step of forming an etching resist pattern by using a photolithography technique after laminating an Al film on the entire surface of the second insulating layer and etching the Al film, (R m H
4- mN) An etchant containing an ammonium salt represented by OH (m = 0, 1, 2, 3, 4) as a main component is used.
作用 本発明はEL発光層に対して耐触性のあるエッチング液
を選択することにより、第２絶縁層のピンホールを介し
て発光層の露出した部分がエッチングされるのを防止す
るものである。The present invention prevents the exposed portion of the light emitting layer from being etched through the pinholes of the second insulating layer by selecting an etchant having resistance to the EL light emitting layer. .
実施例 本発明の第１実施例を第１図を参照しながら説明す
る。Embodiment 1 A first embodiment of the present invention will be described with reference to FIG.
第２絶縁層５上に全面にAl膜６を電子ビーム蒸着した
後（ａ）ポジレジスト（シプレイ社製MP1400−31）７を
塗布し（ｂ）、90℃で15分間プリベークする。所定のフ
ォトマスク８を用いて露光した後（ｃ）現像をシプレイ
社製MF−312現像液を用いて22℃で２分間行う（ｄ）。
その後130℃で30分間ポストベークする。次に、テトラ
メチルアンモニウム水溶液（CH3）4NOHによってAl膜６
のエッチングを行う（ｅ）。After electron beam evaporation of an Al film 6 on the entire surface of the second insulating layer 5, (a) a positive resist (MP1400-31 manufactured by Shipley) 7 is applied (b) and prebaked at 90 ° C. for 15 minutes. After exposure using a predetermined photomask 8, (c) development is performed at 22 ° C. for 2 minutes using MF-312 developing solution manufactured by Shipley (d).
Thereafter, post-baking is performed at 130 ° C. for 30 minutes. Then, Al film 6 by aqueous tetramethylammonium (CH 3) 4 NOH
(E).
25℃で５分間エッチングした後レジストを除去する
と、パターン精度の良いAl電極６が形成される（ｆ）。
テトラエチルアンモニウム水溶液（C2H5）4NOHにおいて
も同様の結果が得られた。When the resist is removed after etching at 25 ° C. for 5 minutes, an Al electrode 6 with high pattern accuracy is formed (f).
Similar results tetraethylammonium hydroxide solution (C2 H5) 4 NOH was obtained.
本実施例によれば、膜のピンホールからしみこんだエ
ッチャントによって発光層がエッチングされることがな
い。用いたELパネルの構成を第２図を参照しながら説明
する。ガラス基板１上にスパッタリング法により厚さ60
0nmのITO透明導電膜を形成し、フォトリソグラフィーと
エッチングによりストライプ状に加工し透明電極２とし
た。その上にチタン酸ジルコン酸ストロンチウムSr（Zr
Ti）O3をスパッタリングすることにより厚さ600nmの第
１絶縁層３を形成した。その上に発光層として厚さ500n
mのマンガン添加硫化亜鉛薄膜（ZnS:Mn）５を電子ビー
ム蒸着した。真空中において450℃で１時間熱処理後、
第２絶縁層６としてタンタル酸バリウムBaTa2O3をスパ
ッタリングにより厚さ200nm形成した。According to the present embodiment, the light emitting layer is not etched by the etchant penetrating from the pinhole of the film. The configuration of the EL panel used will be described with reference to FIG. A thickness of 60 is formed on the glass substrate 1 by a sputtering method.
An ITO transparent conductive film having a thickness of 0 nm was formed and processed into a stripe shape by photolithography and etching to form a transparent electrode 2. The strontium titanate zirconate Sr (Zr
Ti) O 3 was sputtered to form a first insulating layer 3 having a thickness of 600 nm. 500n thick as a light emitting layer on it
m of manganese-added zinc sulfide thin film (ZnS: Mn) 5 was subjected to electron beam evaporation. After heat treatment at 450 ° C for 1 hour in vacuum,
Barium tantalate BaTa 2 O 3 was formed as the second insulating layer 6 to a thickness of 200 nm by sputtering.
本発明の第２実施例を第１図を参照しながら説明す
る。A second embodiment of the present invention will be described with reference to FIG.
第２絶縁層５上に全面にAl膜６を電子ビーム蒸着した
後（ａ）ネガレジスト（コダック社製KMR60CST）７を塗
布し（ｂ）、90℃で15分間プリベークをする。所定のフ
ォトマスク８を用いて露光（ｃ）と現像（ｄ）をした
後、130℃で30分間ポストベークする。30％アンモニア
水を用いて50℃で５分間Al膜をエッチングする（ｅ）。
レジストを除去するとパターン精度の良いAl電極６が形
成される（ｆ）。After electron beam evaporation of an Al film 6 on the entire surface of the second insulating layer 5, (a) a negative resist (KMR60CST manufactured by Kodak Co.) 7 is applied (b) and prebaked at 90 ° C. for 15 minutes. After exposure (c) and development (d) using a predetermined photomask 8, post-baking is performed at 130 ° C. for 30 minutes. The Al film is etched at 50 ° C. for 5 minutes using 30% aqueous ammonia (e).
When the resist is removed, an Al electrode 6 with good pattern accuracy is formed (f).
用いたパネルの構成を第２図を参照しながら説明す
る。発光層に厚さ500nmのユーロピウム添加硫化カルシ
ウム薄膜（CaS:Eu）４を電子ビーム蒸着により形成し、
第１・第２絶縁層と透明電極は第１実施例と同じ膜を用
いた。The configuration of the panel used will be described with reference to FIG. A 500 nm thick europium-doped calcium sulfide thin film (CaS: Eu) 4 is formed on the light emitting layer by electron beam evaporation.
The same films as in the first embodiment were used for the first and second insulating layers and the transparent electrodes.
CaS膜は酸や水に弱くアルカリに強いという性質を持
っているため、本実施例によれば発光層がエッチングさ
れることもなくパネルは完成される。Since the CaS film has the property of being weak against acid and water and strong against alkali, according to this embodiment, the panel is completed without etching the light emitting layer.
発明の効果 本発明によれば、ELパネルの第２絶縁層のピンホール
を介して発光層の露出した部分がエッチングされるのを
防止することができ、安定な製造方法が得られる。According to the present invention, it is possible to prevent the exposed portion of the light emitting layer from being etched through the pinhole of the second insulating layer of the EL panel, and to obtain a stable manufacturing method.
第１図は、本発明の第１及び第２実施例を示すAl電極の
フォトリソグラフィーとエッチングプロセスの工程図、
第２図は、ELパネルの断面図である。 １……ガラス基板 ２……透明電極 ３……第１絶縁層 ４……発光層 ５……第２絶縁層 ６……Al電極 ７……フォトレジスト ８……フォトマスクFIG. 1 is a process diagram of an Al electrode photolithography and etching process showing a first and a second embodiment of the present invention,
FIG. 2 is a cross-sectional view of the EL panel. DESCRIPTION OF SYMBOLS 1 ... Glass substrate 2 ... Transparent electrode 3 ... 1st insulating layer 4 ... Light emitting layer 5 ... 2nd insulating layer 6 ... Al electrode 7 ... Photoresist 8 ... Photomask
Claims (2)
１、第２の２組の平行電極群で構成されるマトリクス電
極間に誘電体層を介して成膜されたEL発光層が基板上に
設けられているパネルにおいて、前記発光層が硫化物か
らなり、前記第１電極群が透明導電膜からなり、前記第
２電極群がAl薄膜からなり、且つ前記第２電極を（RmH
4-mN）OH（ｍ−0,1,2,3,4 Ｒはアルキル基）で示され
るアンモニウム塩を主成分とするエッチャントによって
エッチングすることを特徴とする薄膜ELパネルの製造方
法。An EL light-emitting layer formed through a dielectric layer between matrix electrodes composed of a first and a second two parallel electrode groups arranged in a direction perpendicular to each other. In the panel provided above, the light emitting layer is made of sulfide, the first electrode group is made of a transparent conductive film, the second electrode group is made of an Al thin film, and the second electrode is made of (R m H
4- mN) A method for producing a thin-film EL panel, characterized by etching with an etchant mainly containing an ammonium salt represented by OH (m-0, 1, 2, 3, 4 R is an alkyl group).
ことを特徴とする特許請求の範囲第１項記載の薄膜ELパ
ネルの製造方法。2. The method for manufacturing a thin film EL panel according to claim 1, wherein the EL light emitting layer is made of an alkaline earth sulfide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62159987A JP2605720B2 (en) | 1987-06-26 | 1987-06-26 | Method for manufacturing thin-film EL panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62159987A JP2605720B2 (en) | 1987-06-26 | 1987-06-26 | Method for manufacturing thin-film EL panel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS646395A JPS646395A (en) | 1989-01-10 |
| JP2605720B2 true JP2605720B2 (en) | 1997-04-30 |
Family
ID=15705521
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62159987A Expired - Fee Related JP2605720B2 (en) | 1987-06-26 | 1987-06-26 | Method for manufacturing thin-film EL panel |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2605720B2 (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5128589A (en) * | 1974-09-04 | 1976-03-10 | Matsushita Electric Ind Co Ltd | Denbahatsukokeikotainoseizohoho |
| JPS5589380A (en) * | 1978-12-27 | 1980-07-05 | Dainippon Toryo Co Ltd | Treatment of fluorescent substance emitting light in electric field |
| JPS5927497A (en) * | 1982-08-04 | 1984-02-13 | シャープ株式会社 | Method of forming electrode of thin film el element |
| JPS61260594A (en) * | 1985-05-15 | 1986-11-18 | 松下電器産業株式会社 | Manufacture of multicolor emission el element |
-
1987
- 1987-06-26 JP JP62159987A patent/JP2605720B2/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5128589A (en) * | 1974-09-04 | 1976-03-10 | Matsushita Electric Ind Co Ltd | Denbahatsukokeikotainoseizohoho |
| JPS5589380A (en) * | 1978-12-27 | 1980-07-05 | Dainippon Toryo Co Ltd | Treatment of fluorescent substance emitting light in electric field |
| JPS5927497A (en) * | 1982-08-04 | 1984-02-13 | シャープ株式会社 | Method of forming electrode of thin film el element |
| JPS61260594A (en) * | 1985-05-15 | 1986-11-18 | 松下電器産業株式会社 | Manufacture of multicolor emission el element |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS646395A (en) | 1989-01-10 |
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| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |