JPH01265493A - Manufacture of thin film el element - Google Patents

Abstract

PURPOSE:To remove an Au film from a seal glass contact surface and reduce element manufacturing time by etching a resist pattern forming a group of scanning electrodes with a development liquid with its main ingredient being tetramethylammonium. CONSTITUTION:A Cr film 7, an Ni film 8, and an Au film 10 are laminated by vacuum deposition on a part of a light transmitting substrate 1 not to interface with a signal electrode 2. Al films as a group of scanning electrodes 12 are vacuum deposited over them, a resist is applied and they are exposed to light. After the exposure, the resist pattern is etched in a stripe-like shape in the direction perpendicular to the electrode group 12 with a development liquid with its main ingredient being tetramethylammonium. This process also solves and washes the scanning electrode group and the Au film 10 away from the surface in contact with a seal glass and reduces the element manufacturing time.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application This invention relates to a method of manufacturing a thin film ICL element used for displaying characters, graphics, etc.

Conventional technology X
-Y matrix display devices are known. This device has a horizontal parallel electrode group (hereinafter referred to as a scanning electrode group) and a vertical parallel electrode group (hereinafter referred to as a signal electrode group) on both sides of an electroluminescent layer (hereinafter referred to as an EL emitter layer). A signal is applied through the switching device by the supply '+1f line arranged so as to be orthogonal to each other and connected to each electrode group,
The EL light emitter layer at the intersection of Zl& is caused to emit light (the light emitting surface at this intersection is called a picture element), and characters, symbols, figures, etc. are displayed depending on the combination of the emitted picture elements.

FIG. 4 shows the structure of a conventional example, and FIG. 5 shows its manufacturing process. The display plate of the solid-state image display device used here usually has a transparent signal electrode group 2 and a first extraction electrode group 3 formed on a transparent substrate 1 such as glass, and a first dielectric layer Layer film 4. ICL light emitter layer film 6. The second dielectric layer film 6 is sequentially laminated, and as shown in FIG. 4, a Cr film is placed on a portion not covering the signal electrode group. , N
i film s, Cr film 9. Au films 10 are sequentially laminated in a stripe shape, and the Al film 1 is stacked as a second extraction electrode group 11.
2 are stacked in such a manner that they are perpendicular to the signal electrode group 2 and extend over the second extraction electrode group 11 to form a film.

Generally, the transparent signal electrode group 2 is formed by depositing indium tin oxide (hereinafter abbreviated as ITO) on a smooth glass substrate and patterning it into a desired shape. Scanning 7t perpendicular to and opposite to this [group 12] a metal film of aluminum or the like is formed by vacuum evaporation or the like.

Problems that the invention aims to solve However, the method described above has two problems.

First, in the direct pressure welding method, which connects the extraction electrode group and the external circuit by direct pressure welding, there are only a limited number of metals that can be used for the contact surface (top layer), and materials such as Au that are difficult to form an oxide film. Must.

However, in order to protect each laminated film from humidity etc., a sealing glass must be attached, and for this reason, the uppermost layer U, which comes into contact with the sealing glass, has weak adhesion, so a metal such as Ni is preferable.

This tank is covered with a Cr film of the second soldering electrode group.

After forming the Ni film, the second take-out electrode group U must be deposited in a vacuum again at atmospheric pressure and a mask etc. is attached to prevent U from getting on the part that comes into contact with the sealing glass. It was a huge waste of time because it didn't work. Furthermore, at this time, there was a problem in that if the atmospheric pressure was set to 1000, the adhesion between the Ni film and the U film became weaker, so a further Cr film had to be added between the Ni film and the Au film.

An object of the present invention is to provide a method for manufacturing a thin film ICL element that eliminates the above-mentioned drawbacks.

Means for Solving the Problems According to the present invention, a step of forming a transparent signal electrode group and a first take-out electrode group, which is a take-out portion of the signal electrode group, on a transparent substrate, and the first take-out step are performed. The first dielectric layer film is placed in a range that does not cover the electrode group.

In the process of sequentially laminating the EL light emitting layer film and the second dielectric layer film, a Cr film is applied to areas not covered by the signal wire group.

A step of sequentially laminating a Ni film and an Au film in a stripe shape to form a second extraction electrode group, and an area that overlaps the sealing glass contact surface of the second extraction electrode group and does not overlap the first extraction electrode group. In the thin film EL device, which consists of a step of forming a film and a step of forming a stripe pattern, the film of the film on the contact surface of the seal glass is removed by using a developer containing tetramethyl ammonium as a main component. This is what I did.

Function The present invention can contribute to shortening the manufacturing time of a thin film EL element by removing the Au film on the contact surface of the seal glass when forming the stripe pattern of the scanning electrode group of the thin film ICL element.

EXAMPLE An example of the present invention will be described below. In FIG. 1, 1 is a transparent substrate, 2 is a signal electrode group, and 4 is a first
Dielectric layer, 5 is a light emitter layer, 6 is a second dielectric layer, 11 is a second extraction electrode group (Fig. 2), 7 is a Cr film, 8 is a dielectric layer;
is a Ni film, and 1o is a human U film, which are formed on the top layer of the second extraction electrode group. 12 is a scanning electrode group;
3 is a resist.

Next, it will be explained more specifically. The transparent substrate 1 is a glass substrate, and Corning 7o59 glass is used. The size of the board 1 is 240jff x 180IIM and the thickness is 2
．． It is 4n. An ITO film with a thickness of 600 H was formed on the substrate 1 by direct current sputtering at a gas pressure of 0.5 Pa (partial pressure ratio of argon to oxygen: 6:4). ITO at this time
The resistivity of the film was 2.2×10 −4 Ω·1*. after that! The TO film was processed into stripes by photolithography to form a signal electrode group and at the same time a first extraction electrode group (FIG. 1a). Note that the pattern spacing is 300 μm,
A pattern with a width of 230 μm was formed. Etching was performed with an aqueous solution of ferric chloride in hydrochloric acid.

On top of that, strontium titanate zirconate [5r(T
The first dielectric film 4 having a thickness of eonm was formed by spuckling the ixZriz)03) at a substrate temperature of 400°C. On top of that, the substrate temperature is 20℃ by vapor deposition method.
An EL luminescent layer film 6 made of a manganese-doped zinc sulfide film having a thickness of soon m was formed at 0°C. 1 at 450'C in vacuum
After time heat treatment, barium tantalate [Ba'
A second dielectric film 6 having a thickness of 200 nm was formed by sputtering the RA2061 sintered body at a substrate temperature of 150'C (FIG. 3b).

Next, a second extraction electrode group 11°Cr film 7. N
1 membrane8. An Au film 10 was laminated on the top layer by vacuum evaporation. At this time, the substrate temperature was 150°C and the film thickness was 30°C.
0nEIl.

Finally, an Al film with a thickness of 160 nm is vacuum deposited and scanned ', t.
i: I'iff group 12. The film forming range is the second
A resist 13 is coated on the thus formed scanning electrode group 12, which overlaps up to the surface contacting the seal glass of the extraction electrode group and does not cover the first extraction electrode group, and is exposed. This is a range that overlaps a part of the second extraction electrode group and does not cover the sealing glass contact surface, and a range that does not cover the first extraction electrode group. The resist pattern thus formed was etched into stripes in a direction perpendicular to the signal electrode group 6 using a developer containing tetramethyl ammonium as a main component to form a scanning electrode group 12. At the same time, the uppermost membranes 10 of the scanning electrode group and the second extraction electrode group which are in contact with the sealing glass are dissolved with a developer containing tetramethyl ammonium as a main component. In this way, the thin film EL device of the present invention was completed.

The reliability of the second extraction electrode group portion of the produced EL display was tested by thermal testing (-20'C to 70'C).

In the case of 100 cycles), the resistance value of the connection between Al and Au was measured, and it was confirmed that the resistance value hardly changed from the initial value and was extremely reliable.

In this embodiment, the N1 film is used as the underlying layer of Au, but the layer is not limited to this, and metals such as Cr may also be used.

Effects of the Invention As described above, according to the present invention, when forming the pattern of the scanning electrode group, the A of the sealing glass contact surface of the second extraction electrode group is
By removing the U film, it is possible to contribute to shortening the time required to produce a thin film EL element, and the adhesion of the sealing glass contact surface is improved.

[Brief explanation of the drawing]

FIG. 1 is a cross-sectional view showing the structure of a thin film EL device manufactured using the method for manufacturing a thin film EL device according to the present invention, FIG. 2 is a plan view of the same, FIG. 3 is a diagram of the manufacturing process, and FIG. A cross-sectional view showing the structure of a conventionally used thin film EL element, and FIG. 6 is a manufacturing process diagram thereof. DESCRIPTION OF SYMBOLS 1...Transparent substrate, 2...Signal overlap group, 3...First single electrode group, 4...
・First dielectric film, 6... EL light emitting layer film, 6.
...Second dielectric film, 7...Cr film, 8.
...N1 film, 9...Cr film, 1o...
...Au film, 11...second extraction electrode group, 12...Al film (scanning electrode group), 13...
...Resist, 14... Seal glass. Name of agent, patent attorney Toshio Nakao and 1 other person1-
Gu Yu + Hi-class e--762 visit t a 1 go! 4---Seal sword/lass Fig. 2

Claims (1)

[Claims] forming a transparent conductive film at a predetermined location on a light-transmitting substrate and processing it into a stripe shape to simultaneously form a signal electrode group and a first extraction electrode group that is an extraction portion of the signal electrode group; a step of forming a laminated film consisting of a first dielectric layer film, a light emitting layer film, and a second dielectric layer film in an area not covered by the first extraction electrode group; a Cr film in a part not covered by the signal electrode group; a step of sequentially laminating a Ni film and an Au film in a stripe shape to form a second extraction electrode group;
forming an Al film in a range that covers the contact surface with the seal glass for protecting the laminated film of the extraction electrode group and does not cover the first extraction electrode group;
A resist pattern is formed on the film in the form of a stripe, which is perpendicular to the signal electrode group, overlaps a part of the second extraction electrode group, and exposes the Al film formed on the contact surface with the seal glass. At the same time, the Al film is etched into stripes along the resist pattern perpendicular to the signal electrode group to form a scanning electrode group by using a developer containing tetra-methyl ammonium as a main component. The exposed Al film and the lower layer A
A method for manufacturing a thin film EL device, comprising a step in which the u film can be removed at the same time.