JPH0117840Y2 - - Google Patents
Info
- Publication number
- JPH0117840Y2 JPH0117840Y2 JP19689384U JP19689384U JPH0117840Y2 JP H0117840 Y2 JPH0117840 Y2 JP H0117840Y2 JP 19689384 U JP19689384 U JP 19689384U JP 19689384 U JP19689384 U JP 19689384U JP H0117840 Y2 JPH0117840 Y2 JP H0117840Y2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- thin film
- transparent electrode
- power supply
- dielectric layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 16
- 239000010408 film Substances 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 6
- 229910001887 tin oxide Inorganic materials 0.000 claims description 6
- 229910003437 indium oxide Inorganic materials 0.000 claims description 5
- 230000006866 deterioration Effects 0.000 claims description 3
- 229910000838 Al alloy Inorganic materials 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims description 2
- 239000011521 glass Substances 0.000 description 14
- 125000006850 spacer group Chemical group 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 239000002313 adhesive film Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910018507 Al—Ni Inorganic materials 0.000 description 1
- 241000511976 Hoya Species 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Description
【考案の詳細な説明】
〔産業上の利用分野〕
本考案は、平面薄型デイスプレイ・デバイスと
して、文字、記号及び図形等を含むコンピユータ
の出力表示端末機器その他種々の表示装置に文
字、記号、及び図形等の静止画像、動画像の表示
手段として利用される薄膜ELパネルに関し、特
に、交流電界の印加に依つてEL発光を呈する薄
膜EL素子を使用した薄膜ELパネルの電極構造に
関するものである。[Detailed description of the invention] [Field of industrial application] The present invention is a flat thin display device that can display characters, symbols, figures, etc. on computer output display terminal equipment and various other display devices. The present invention relates to thin-film EL panels used as means for displaying still and moving images such as figures, and in particular to the electrode structure of thin-film EL panels using thin-film EL elements that emit EL light upon application of an alternating current electric field.
従来、この種のELパネルは、第４図に示すよ
うなものがあつた。すなわち、ガラス基板１上
に、複数帯状に平行配列し、かつ、後記する外囲
器外方へ延設したIn2 O3，Sn O2，ITO（Indium
Tin Oxide）等の透明導電膜からなる透明電極２
と、Y2 O3，Ta2 O5，Si3 N4，Al2 O3等からな
る第１誘電体層３と、発光中心として0.1〜2.0重
量％のMn（又はTb，Sm，Cu，Al，Br等）をド
ープしたZnS（又はZnSe等）の薄膜EL層４と、前
記した第１誘電体層３と同様な物質からなる第２
誘電体層５と、前記透明電極２と直行する方向に
複数帯状に平行配列したAl等からなる背面電極
６とを順次積層して形成した薄膜EL素子と、こ
の薄膜EL素子の発光特性等の特性が湿気により
著しく劣化することから、防湿のためにこの薄膜
EL素子の側面を包囲する大きさの周辺領域に設
けたスペーサ７を介して、背面板８を接着剤９に
よつて固着し（スペーサ７も同様に固着され
る。）、前記ガラス基板１とスペーサ７と背面板８
とからなる外囲器１０とからなり、かつ、前記透
明電極２の一端が、前記外囲器１０外に延設され
ている薄膜ELパネルがあつた。しかし、前記し
たような材質からなる透明電極２は、結晶性が高
く、多孔質のため透湿性を有するので、外気の水
分がこの外囲器内に侵入し、薄膜ELパネルの特
性を劣化し、長寿命化を妨げている。この欠点を
除去するために、第５図ａ，ｂのような構造の薄
膜ELパネルがある。なお、同図ｂは、同図ａの
スペーサ、背面板、接着剤及び薄膜EL層を省略
した拡大部分平面図である。この薄膜ELパネル
の形成は、下記のとおりである。先ず、ガラス基
板１上に、前述した透明電極２と同様の透明電極
２を積層する。ただし、後記する外囲器内に位置
されている。次に、前述したと同様に第１誘電体
層３、薄膜EL層４及び第２誘電体層５を順次積
層する。次に、透明電極２等を積層した表面を除
くガラス基板１の表面、透明電極２、第１誘電体
層３及び第２誘電体層５を被覆するようにAl薄
膜を設け、さらに、このAl薄膜にフオトレジス
トを塗布し、このフオトレジストの上方に、第５
図ａ及びｂで示すような形状のAlからなる背面
電極６（この背面電極６は、前記透明電極２と直
行する方向に複数帯状に平行配列されている。）
と、前記第２誘電体層５から突出して、延設され
ている前記背面電極２の突出部２１の一部が連結
されるようにして設けられたAlからなる矩形状
の給電電極１１とを設けるべくフオトマスクを配
置し、このマスクを通して前記フオトレジストを
露光し、現像し、レジストパターンを形成し、次
に、このレジストパターンをマスクとしてAl薄
膜をエツチング除去する。そして、前記レジスト
パターンを有機溶剤を用いて剥離して、Alから
なる背面電極６と給電電極１１とを同時に形成す
る。次に、透明電極２及び給電電極１１の透明電
極２に連絡している部分が内在するように、前記
したと同様のスペーサ７及び背面板８を接着剤９
によつて固着し、ガラス基板１、スペーサ７及び
背面板８からなる外囲器１０を形成し、薄膜EL
パネルを形成する。
Conventionally, this type of EL panel was as shown in Figure 4. That is, on the glass substrate 1, In 2 O 3 , Sn O 2 , ITO (Indium
Transparent electrode 2 made of transparent conductive film such as Tin Oxide
and a first dielectric layer 3 made of Y 2 O 3 , Ta 2 O 5 , Si 3 N 4 , Al 2 O 3 , etc., and 0.1 to 2.0% by weight of Mn (or Tb, Sm, Cu, A thin film EL layer 4 of ZnS (or ZnSe, etc.) doped with Al, Br, etc.) and a second dielectric layer 4 made of the same material as the first dielectric layer 3 described above.
A thin film EL device is formed by sequentially laminating a dielectric layer 5 and a back electrode 6 made of Al or the like arranged in parallel strips in a direction perpendicular to the transparent electrode 2, and the light emitting characteristics of this thin film EL device. This thin film is used to prevent moisture, as its properties deteriorate significantly due to moisture.
A back plate 8 is fixed with an adhesive 9 via a spacer 7 provided in a peripheral area of a size that surrounds the side surface of the EL element (the spacer 7 is also fixed in the same manner), and the glass substrate 1 and Spacer 7 and back plate 8
There was a thin film EL panel consisting of an envelope 10 consisting of the following, and one end of the transparent electrode 2 extending outside the envelope 10. However, since the transparent electrode 2 made of the above-mentioned material has high crystallinity and is porous and has moisture permeability, moisture from the outside air can enter the envelope and deteriorate the characteristics of the thin-film EL panel. , which impedes longevity. In order to eliminate this drawback, there is a thin film EL panel with a structure as shown in FIGS. 5a and 5b. Note that FIG. 5B is an enlarged partial plan view in which the spacer, back plate, adhesive, and thin film EL layer of FIG. The formation of this thin film EL panel is as follows. First, a transparent electrode 2 similar to the transparent electrode 2 described above is laminated on a glass substrate 1. However, it is located within the envelope, which will be described later. Next, the first dielectric layer 3, thin film EL layer 4, and second dielectric layer 5 are sequentially laminated in the same manner as described above. Next, an Al thin film is provided so as to cover the surface of the glass substrate 1 excluding the surface on which the transparent electrode 2 etc. are laminated, the transparent electrode 2, the first dielectric layer 3 and the second dielectric layer 5, and A thin film of photoresist is applied, and a fifth layer is placed above the photoresist.
A back electrode 6 made of Al and having a shape as shown in FIGS.
and a rectangular power supply electrode 11 made of Al that protrudes from the second dielectric layer 5 and is provided so that a part of the protrusion 21 of the extended rear electrode 2 is connected to the second dielectric layer 5. The photoresist is exposed through this mask and developed to form a resist pattern, and then the Al thin film is etched away using this resist pattern as a mask. Then, the resist pattern is peeled off using an organic solvent to simultaneously form the back electrode 6 and the power supply electrode 11 made of Al. Next, a spacer 7 and a back plate 8 similar to those described above are attached using an adhesive 9 so that the parts of the transparent electrode 2 and the power supply electrode 11 that are connected to the transparent electrode 2 are inside.
to form an envelope 10 consisting of the glass substrate 1, the spacer 7 and the back plate 8, and
Form a panel.
しかしながら、従来の薄膜ELパネルは、前記
したようにAlからなる給電電極１１が透明導電
膜からなる透明電極２の突出部２１の一部を被覆
した構造であるので、この給電電極を形成すると
き、リン酸、硝酸、酢酸及び水の混合液以外の
Alの薄膜のエツチヤントに浸されたとき、透明
電極２の突出部２１が還元され黒化又は溶解して
しまい、さらに、この還元が、誘電体層の下部の
透明電極２部分にも進行して透明性を損う欠点が
あつたばかりか、レジストパターンで被覆されて
いる給電電極１１のうち、透明電極２の突出部２
１と連結されている部分が、エツチング液の介在
によつて、局部電池を形成して、変質したり溶出
してしまうという重大な欠点があつた。さらに、
Al薄膜をエツチングした後、フオトレジストを
剥離するとき、有機溶剤のみしか使用することが
できなく、他の剥離液、例えばアルカリ性溶液を
使用すると、前記したと同様に透明電極２が還元
してしまい、さらに局部電池を形成する欠点があ
つた。すなわち、従来の構造の薄膜ELパネルの
給電電極を形成するときには、エツチヤントやフ
オトレジスト剥離液が限定されてしまう欠点があ
つた。
However, as described above, the conventional thin film EL panel has a structure in which the power supply electrode 11 made of Al covers a part of the protrusion 21 of the transparent electrode 2 made of a transparent conductive film. , other than a mixture of phosphoric acid, nitric acid, acetic acid and water
When the thin film of Al is immersed in the etchant, the protrusion 21 of the transparent electrode 2 is reduced and blackened or dissolved, and this reduction also progresses to the portion of the transparent electrode 2 below the dielectric layer. Not only does it have a defect that impairs transparency, but also the protrusion 2 of the transparent electrode 2 of the power supply electrode 11 covered with the resist pattern.
There was a serious drawback in that the portion connected to No. 1 formed a local battery due to the presence of the etching solution, resulting in deterioration or elution. moreover,
When removing the photoresist after etching the Al thin film, only organic solvents can be used; if other removers, such as alkaline solutions, are used, the transparent electrode 2 will be reduced in the same way as described above. , there was also the disadvantage of forming a local battery. That is, when forming a power supply electrode for a thin film EL panel having a conventional structure, there is a drawback that the etchant and photoresist stripping solution are limited.
本考案は、前記した事情に鑑みてなされたもの
で、その目的は、エツチヤントやレジスト剥離液
を限定することなく給電電極を形成することがで
きる構造をもつ薄膜ELパネルを提供することで
ある。 The present invention was made in view of the above-mentioned circumstances, and its purpose is to provide a thin film EL panel having a structure in which power supply electrodes can be formed without limiting the etchant or resist stripping solution.
本考案は、透光性基板上に設けられた酸化物か
らなる透明電極と背面電極との間に、薄膜EL層
及び誘電体層を挟持し、前記透明電極の一端が前
記誘電体層に被覆されず突出して延設されている
薄膜EL素子と、前記薄膜EL素子を封止すべく前
記透光性基板と背面板とを備えた外囲器とからな
り、かつ給電手段及び前記透明電極の劣化防止手
段としての給電金属電極を前記誘電体層から前記
突出している透明電極の全面と前記突出近傍の前
記誘電体層の一部を被覆するように設け、さらに
前記給電金属電極を前記外囲器外方へ延設したこ
とを特徴とする薄膜ELパネルであり、その態様
は、前記透明電極が、酸化インジウム、酸化ス
ズ、スズをドープした酸化インジウム、アンチモ
ンをドープした酸化スズ等の透明導電膜の何れか
ら選択され、前記給電金属電極が、Al又はAl合
金である。以下、本考案の実施例を図に基づき詳
細に説明する。
In the present invention, a thin EL layer and a dielectric layer are sandwiched between a transparent electrode made of an oxide provided on a transparent substrate and a back electrode, and one end of the transparent electrode is covered with the dielectric layer. It consists of a thin film EL element that protrudes and extends without being exposed, and an envelope including the transparent substrate and a back plate for sealing the thin film EL element, and a power supply means and a transparent electrode. A power supply metal electrode as a means for preventing deterioration is provided so as to cover the entire surface of the transparent electrode protruding from the dielectric layer and a part of the dielectric layer near the protrusion, and the power supply metal electrode is further provided on the outer surface of the dielectric layer. The thin film EL panel is characterized in that it extends outward from the device, and the transparent electrode is made of a transparent conductive material such as indium oxide, tin oxide, tin-doped indium oxide, antimony-doped tin oxide, etc. The power supply metal electrode is selected from any of the above films and is made of Al or an Al alloy. Hereinafter, embodiments of the present invention will be described in detail based on the drawings.
〔実施例１〕
先ず、本例の構造を第１図に基づき説明する。
アルミノシリケートガラスNA40（HOYA(株)商品
名）からなるガラス基板１上に、前述したと同様
に、スズをドープした酸化インジウム（ITO）か
らなる透明電極２，Si3 N4からなる第１誘電体
層３、0.5重量％のMnをドープしたZnSからなる
薄膜EL層４及び前記透明電極２と直行する方向
に複数帯状に平行配列したAlからなる背面電極
６（後記する外囲器１０外方へ延設されている。）
を順次積層し、かつ、前記透明電極２の一端が、
前記第１誘電体層３から突出・延設されている
（以下、「突出部」２１という。）薄膜EL素子と、
前記突出部２１の全面と第１、第２誘電体層３，
５の一部を被覆するAlからなる給電用金属１２
（以下、「給電電極」という。）と、さらに、エポ
キシ系樹脂からなるスペーサ７とガラス基板１と
同種の背面板８とをエポキシ系樹脂の接着剤９に
よつて、ガラス基板１に固着し、ガラス基板１と
スペーサ７と背面板８とによつて形成された外囲
器１０とから本例の薄膜ELパネルは形成されて
いる。このとき、前記給電用電極１２は、外囲器
１０の外方へ延設され、駆動制御用回路（図示せ
ず。）と電気的に接続されている。[Example 1] First, the structure of this example will be explained based on FIG. 1.
A transparent electrode 2 made of tin-doped indium oxide (ITO) and a first dielectric made of Si 3 N 4 are placed on a glass substrate 1 made of aluminosilicate glass NA40 (trade name of HOYA Corporation), as described above. A body layer 3, a thin EL layer 4 made of ZnS doped with 0.5% by weight of Mn, and a back electrode 6 made of Al arranged in parallel in a plurality of strips in the direction perpendicular to the transparent electrode 2 (outer side of the envelope 10, which will be described later). )
are sequentially laminated, and one end of the transparent electrode 2 is
a thin film EL element that protrudes and extends from the first dielectric layer 3 (hereinafter referred to as a "protrusion"21);
The entire surface of the protrusion 21 and the first and second dielectric layers 3,
Power supply metal 12 made of Al covering a part of 5
(hereinafter referred to as "power supply electrode"), a spacer 7 made of epoxy resin, and a back plate 8 of the same type as the glass substrate 1 are fixed to the glass substrate 1 with an adhesive 9 made of epoxy resin. The thin film EL panel of this example is formed from an envelope 10 formed by a glass substrate 1, a spacer 7, and a back plate 8. At this time, the power feeding electrode 12 extends outward from the envelope 10 and is electrically connected to a drive control circuit (not shown).
次に、本例の製造工程を第２図に基づき説明す
る。なお、同図ｅは、同図ｄの薄膜EL層４を略
した拡大部分平面図である。 Next, the manufacturing process of this example will be explained based on FIG. 2. Note that Figure e is an enlarged partial plan view of Figure d, with the thin film EL layer 4 omitted.
先ず、ガラス基板１上に、ITOからなる透明導
電膜（膜厚：2000Å）を真空蒸着によつて成膜
し、通常のフオトリソグラフイによつて、複数帯
状に平行配列して透明電極２を形成する。次に、
この透明電極２上に、スパツタリング法によつて
Si3 N4からなる第１誘電体層３（膜厚：4000Å）
を透明電極２の一端が突出するように積層し、次
に、真空蒸着法によつて薄膜EL層４（膜厚：
6000Å）を積層し、次に、スパツタリング法によ
つてSi3 N4からなる第２誘電体層５（膜厚：
2500Å）を前記薄膜EL層を被覆するように積層
し、さらに、透明電極２等を設けたガラス基板１
の露出している表面と、透明電極２の突出部２１
と、第１及び第２誘電体層３，５を被覆するよう
に、Al薄膜１３（膜厚：5000Å）を抵抗加熱法
により積層する（同図ａ）。次に、このAl薄膜１
３上にポジ型のフオトレジスト１４（MP−
1370、ヘキスト社 商品名）をコートし、このフ
オトレジスト１４の上方に、後記する背面電極６
と給電電極１２を形成するためのCrからなる遮
光性パターン１５を有するフオトマスク１６を配
置し、このフオトマスク１６を通し、紫外光等の
光によつて前記フオトレジスト１４を露光する
（同図ｂ）。次に、前記露光されたフオトレジスト
１４を現像し、レジストパターン１７を形成する
（同図ｃ）。次に、レジストパターン１７をマスク
として、前記Al薄膜１３をリン酸、酢酸及び水
の混合液をエツチヤントとしてAl薄膜１３をエ
ツチングし、前記レジストパターン１７を水酸化
ナトリウム溶液によつて剥離し、背面電極６と給
電電極１２を形成する（同図ｄ，ｅ）。そして、
前述したように外囲器１０を形成し、本例の薄膜
ELパネルを製造する。 First, a transparent conductive film (thickness: 2000 Å) made of ITO is formed on a glass substrate 1 by vacuum evaporation, and then transparent electrodes 2 are formed by arranging multiple strips in parallel using ordinary photolithography. Form. next,
On this transparent electrode 2, a sputtering method is applied.
First dielectric layer 3 made of Si 3 N 4 (thickness: 4000 Å)
are stacked so that one end of the transparent electrode 2 protrudes, and then a thin film EL layer 4 (thickness:
6000 Å), and then a second dielectric layer 5 (thickness:
2500 Å) so as to cover the thin film EL layer, and further provided with a transparent electrode 2, etc., on a glass substrate 1.
and the exposed surface of the transparent electrode 2 and the protrusion 21 of the transparent electrode 2
Then, an Al thin film 13 (thickness: 5000 Å) is laminated by a resistance heating method so as to cover the first and second dielectric layers 3 and 5 (FIG. 4A). Next, this Al thin film 1
A positive photoresist 14 (MP-
1370 (trade name, manufactured by Hoechst), and a back electrode 6 (to be described later) is coated on top of this photoresist 14.
A photomask 16 having a light-shielding pattern 15 made of Cr for forming the power supply electrode 12 is arranged, and the photoresist 14 is exposed to light such as ultraviolet light through the photomask 16 (FIG. 1b). . Next, the exposed photoresist 14 is developed to form a resist pattern 17 (c in the same figure). Next, using the resist pattern 17 as a mask, the Al thin film 13 is etched using a mixed solution of phosphoric acid, acetic acid, and water as an etchant, and the resist pattern 17 is peeled off with a sodium hydroxide solution. The electrode 6 and the power supply electrode 12 are formed (d and e in the same figure). and,
The envelope 10 is formed as described above, and the thin film of this example is
Manufactures EL panels.
以上のように、本例によれば、透明電極２の突
出部２１と第１及び第２誘電体層３，５の一部を
給電電極にて被覆しているので、エツチヤントや
レジスト剥離液によつて、透明電極２が還元され
ず、さらに、給電電極１２が、外囲器１０の外方
に延設されているので、外気の湿気が外囲器１０
内に侵入することもない。 As described above, according to this example, since the protruding portion 21 of the transparent electrode 2 and a portion of the first and second dielectric layers 3 and 5 are covered with the power supply electrode, it is not necessary to use an etchant or a resist stripping solution. Therefore, since the transparent electrode 2 is not reduced and the power supply electrode 12 is extended to the outside of the envelope 10, the moisture in the outside air is absorbed into the envelope 10.
It does not invade inside.
〔実施例２〕
第３図に基づいて説明する。なお、同図ｂは同
図ａのスペーサ、背面板、接着剤及び薄膜EL層
を略した拡大部分平面図である。[Example 2] This will be explained based on FIG. 3. Note that Figure b is an enlarged partial plan view of Figure A, with the spacer, back plate, adhesive, and thin film EL layer omitted.
本例と、前記実施例と異なる構造は、透明電極
２の突出部２１が、外囲器１０外方へ延設されて
いることであり、他は前記実施例と同様であるの
で説明を省略する。 The structure of this example differs from the previous example in that the protruding portion 21 of the transparent electrode 2 extends outward from the envelope 10, and the rest is the same as the previous example, so the explanation will be omitted. do.
この透明電極２（材質は、ITO。）は、外囲器
１０外方へ延設されているが、給電電極１２（材
質はAl。）によつて、その突出部２１は全面被覆
されている。 The transparent electrode 2 (made of ITO) extends outward from the envelope 10, but its protrusion 21 is entirely covered by the power supply electrode 12 (made of Al). .
本例によれば、前記実施例と同様の効果があ
り、さらに、ガラスとAlとの付着力よりも透明
導電膜とAlとの付着力及びガラスと透明導電膜
との付着力の方が強いので、実質的に、透明電極
２の突出部２１を介して、ガラス基板１と給電電
極１２との付着力も強化している。 According to this example, the same effects as in the previous example are obtained, and furthermore, the adhesion force between the transparent conductive film and Al and the adhesion force between the glass and the transparent conductive film are stronger than the adhesion force between glass and Al. Therefore, the adhesion between the glass substrate 1 and the power supply electrode 12 is substantially strengthened through the protrusion 21 of the transparent electrode 2.
以上、前記実施例１，２において、背面電極及
び給電電極を同一材質にしたが、異なる材質でも
よいが、望ましくは製造工程の簡素化のために同
一材質がよい。また、背面電極及び給電電極の材
質としてAlを用いたが、例えば、Al−Ni等のAl
合金やAg−Mn，Au，Ag，Cu等の金属であつて
もよい。さらに、前記実施例１，２において、第
１及び第２誘電体層の透明電極の突出部近傍に給
電電極を被覆したが、これに限らず、突出部近傍
にある第１又は第２誘電体層を少なくとも被覆す
ればよい。さらにまた、透明電極としては、前記
以外に、In2 O3，Sn O2，アンチモンをドープし
たスズ酸化物等の透明導電膜や透明性を有する金
属酸化物も使用することができる。 As described above, in the first and second embodiments, the back electrode and the power supply electrode are made of the same material, but they may be made of different materials, but preferably the same material is used to simplify the manufacturing process. In addition, although Al was used as the material for the back electrode and the power supply electrode, for example, Al-Ni, etc.
It may be an alloy or a metal such as Ag-Mn, Au, Ag, or Cu. Further, in Examples 1 and 2, the power feeding electrode was coated near the protrusion of the transparent electrode of the first and second dielectric layers, but the present invention is not limited to this, and the first or second dielectric layer near the protrusion It is sufficient if at least one layer is coated. Furthermore, as the transparent electrode, in addition to the above, a transparent conductive film such as In 2 O 3 , Sn O 2 , or tin oxide doped with antimony, or a transparent metal oxide can also be used.
本考案は、透明電極の突出部のみならず、突出
部近傍の誘電体層にも給電電極を被覆しているの
で、突出部全面を完全に被覆することができ、給
電電極及び背面電極を形成するときに使用するエ
ツチヤントやレジスト剥離液によつて、透明電極
を還元して、黒化又は溶解することを防止する効
果がある。
In the present invention, not only the protruding part of the transparent electrode but also the dielectric layer near the protruding part is coated with the feeding electrode, so the entire surface of the protruding part can be completely covered, forming the feeding electrode and the back electrode. The etchant and resist stripping solution used during this process have the effect of reducing the transparent electrode and preventing it from becoming black or dissolving.
第１図は本考案の一実施例を示す断面図であ
り、第２図ａ〜ｄは本考案の一実施例の製造工程
を示す断面図であり、同図ｅは同図ｄの薄膜EL
層を略した拡大部分平面図である。第３図ａは本
考案の他の実施例を示す断面図であり、同図ｂは
同図ａのスペーサ、背面板、接着剤及び薄膜EL
層を略した拡大部分平面図である。第４図は従来
の薄膜ELパネルの断面図であり、第５図ａは従
来の他の薄膜ELパネルを示す断面図であり、同
図ｂは同図ａのスペーサ、背面板、接着剤及び薄
膜EL層を略した拡大部分平面図である。
２……透明電極、３……第１誘電体層、５……
第２誘電体層、６……背面電極、１２……給電電
極、２１……突出部。
FIG. 1 is a cross-sectional view showing an embodiment of the present invention, FIGS. 2 a to 2 d are cross-sectional views showing the manufacturing process of an embodiment of the present invention, and FIG.
FIG. 3 is an enlarged partial plan view with layers omitted. Figure 3a is a sectional view showing another embodiment of the present invention, and Figure 3b is a sectional view showing the spacer, back plate, adhesive, and thin film EL shown in Figure 3a.
FIG. 3 is an enlarged partial plan view with layers omitted. FIG. 4 is a sectional view of a conventional thin film EL panel, FIG. 5a is a sectional view of another conventional thin film EL panel, and FIG. FIG. 3 is an enlarged partial plan view in which a thin film EL layer is omitted. 2... Transparent electrode, 3... First dielectric layer, 5...
2nd dielectric layer, 6... Back electrode, 12... Power supply electrode, 21... Projection.
Claims (1)
明電極と背面電極との間に、薄膜EL層及び誘
電体層を挟持し、前記透明電極の一端が前記誘
電体層に被覆されず突出して延設されている薄
膜EL素子と、前記薄膜EL素子を封止すべく前
記透光性基板と背面板とを備えた外囲器とから
なり、かつ給電手段及び前記透明電極の劣化防
止手段としての給電金属電極を前記誘電体層か
ら前記突出している透明電極の全面と前記突出
近傍の前記誘電体層の一部を被覆するように設
け、さらに前記給電金属電極を前記外囲器外方
へ延設したことを特徴とする薄膜ELパネル。 (2) 前記透明電極が、酸化インジウム、酸化ス
ズ、スズをドープした酸化インジウム、アンチ
モンをドープした酸化スズ等の透明導電膜の何
れから選択され、前記給電金属電極が、Al又
はAl合金であることを特徴とする実用新案登
録請求の範囲第(1)項記載の薄膜ELパネル。[Claims for Utility Model Registration] (1) A thin EL layer and a dielectric layer are sandwiched between a transparent electrode made of an oxide provided on a transparent substrate and a back electrode, and one end of the transparent electrode is sandwiched between a transparent electrode made of an oxide and a back electrode. consisting of a thin film EL element that is not covered by the dielectric layer and extends protrudingly, and an envelope including the light-transmitting substrate and a back plate for sealing the thin film EL element, and A power supply metal electrode serving as a power supply means and a means for preventing deterioration of the transparent electrode is provided so as to cover the entire surface of the transparent electrode protruding from the dielectric layer and a part of the dielectric layer near the protrusion; A thin film EL panel characterized in that a power supply metal electrode is extended to the outside of the envelope. (2) The transparent electrode is selected from a transparent conductive film such as indium oxide, tin oxide, tin-doped indium oxide, and antimony-doped tin oxide, and the power supply metal electrode is Al or an Al alloy. A thin film EL panel according to claim (1) of the utility model registration claim, characterized in that:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19689384U JPH0117840Y2 (en) | 1984-12-28 | 1984-12-28 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19689384U JPH0117840Y2 (en) | 1984-12-28 | 1984-12-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61114797U JPS61114797U (en) | 1986-07-19 |
| JPH0117840Y2 true JPH0117840Y2 (en) | 1989-05-24 |
Family
ID=30754814
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19689384U Expired JPH0117840Y2 (en) | 1984-12-28 | 1984-12-28 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0117840Y2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2542473B2 (en) * | 1992-07-24 | 1996-10-09 | シャープ株式会社 | Thin film EL device |
-
1984
- 1984-12-28 JP JP19689384U patent/JPH0117840Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61114797U (en) | 1986-07-19 |
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