JPH1020320A - Method for patterning transparent conductive film and substrate with transparent electrode - Google Patents
Method for patterning transparent conductive film and substrate with transparent electrodeInfo
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- JPH1020320A JPH1020320A JP17689996A JP17689996A JPH1020320A JP H1020320 A JPH1020320 A JP H1020320A JP 17689996 A JP17689996 A JP 17689996A JP 17689996 A JP17689996 A JP 17689996A JP H1020320 A JPH1020320 A JP H1020320A
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- Prior art keywords
- transparent conductive
- conductive film
- transparent
- substrate
- resist
- Prior art date
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- Liquid Crystal (AREA)
- Optical Filters (AREA)
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、透明電導膜のパタ
ーニング方法と、該方法を用いて得られる電子ディスプ
レイ用として好適な透明電極付き基体に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for patterning a transparent conductive film and a substrate with a transparent electrode suitable for use in an electronic display obtained by the method.
【０００２】[0002]
【従来の技術】現在、液晶ディスプレイ（以下ＬＣＤと
称する）などの透明電極として、スズを含んだ酸化イン
ジウム膜（以下ＩＴＯ膜と称する）が広く用いられてい
るが、一方でさらなる低抵抗の透明電極も要求されてい
る。特に、ＳＴＮ型のカラーＬＣＤにおいては、その高
精細化、大画面化に伴い、液晶駆動用透明電極の線幅も
より細く、また長い形状のものが必要となり、シート抵
抗３Ω／□以下の極めて低抵抗の透明導電膜が必要とさ
れる。2. Description of the Related Art At present, an indium oxide film containing tin (hereinafter referred to as an ITO film) is widely used as a transparent electrode of a liquid crystal display (hereinafter referred to as an LCD). Electrodes are also required. In particular, in the case of STN-type color LCDs, as the definition and size of the screen are increased, the line width of the transparent electrode for driving the liquid crystal is required to be thinner and longer, and the sheet resistance is extremely lower than 3Ω / □. A transparent conductive film having a low resistance is required.
【０００３】しかし、従来のＩＴＯ膜を用いた場合、こ
のシート抵抗を達成するためには、膜厚を３００ｎｍ以
上にする必要があり、ＩＴＯ膜の成膜コストが増加する
こと、電極パターニングの困難さが増加することなどの
問題が生じ、限界がある。However, when a conventional ITO film is used, in order to achieve this sheet resistance, the film thickness must be 300 nm or more, which increases the cost of forming the ITO film and makes it difficult to pattern the electrodes. There is a problem such as an increase in the size, and there is a limit.
【０００４】他方、低抵抗透明導電膜を容易に得る方法
としては、Ａｇなどの金属層をＩＴＯなどの透明体層で
はさんだ透明体層／金属層／透明体層という構成が知ら
れているが、十分なパターニング性能が得られず、実用
化されていなかった。On the other hand, as a method of easily obtaining a low-resistance transparent conductive film, a structure of a transparent layer / metal layer / transparent layer in which a metal layer such as Ag is sandwiched between transparent layers such as ITO is known. And sufficient patterning performance could not be obtained, and it had not been put to practical use.
【０００５】すなわち、酸化物層と金属層の酸などのエ
ッチング液に対するエッチング特性が異なるために、金
属層のエッチング残渣が発生したり、シャープなエッジ
形状が得られない、十分なパターン寸法精度が実現でき
ない等の問題点があった。That is, since the oxide layer and the metal layer have different etching characteristics with respect to an etching solution such as an acid, an etching residue of the metal layer is generated or a sharp edge shape cannot be obtained. There was a problem that it could not be realized.
【０００６】[0006]
【発明が解決しようとする課題】本発明は、従来技術が
有していた前述の欠点を解決し、低比抵抗の透明導電膜
を容易に、しかも精度よくパターニングできる方法、お
よびその方法によって形成された低抵抗微細電極を有す
る透明電極付き基体の提供を目的とする。SUMMARY OF THE INVENTION The present invention solves the above-mentioned disadvantages of the prior art, and provides a method for easily and accurately patterning a transparent conductive film having a low specific resistance, and a method for forming the same by the method. It is an object of the present invention to provide a substrate with a transparent electrode having a low-resistance fine electrode formed as described above.
【０００７】[0007]
【課題を解決するための手段】本発明は、基体上に、透
明酸化物層と金属層とがこの順に交互に（２ｎ＋１）層
（ｎ≧１）積層されてなる透明導電膜のパターニング法
において、基体上に、アルカリ溶液または有機溶媒に可
溶なレジストを用いて所望のパターンを形成した後に、
前記透明導電膜を形成し、その後、アルカリ溶液あるい
は有機溶媒により該透明電導膜の不要な部分をレジスト
ごと剥離することを特徴とする透明導電膜のパターニン
グ方法を提供する。According to the present invention, there is provided a method for patterning a transparent conductive film comprising a substrate and a transparent oxide layer and a metal layer alternately laminated in this order (2n + 1) layers (n ≧ 1). After forming a desired pattern on a substrate using a resist soluble in an alkaline solution or an organic solvent,
A method for patterning a transparent conductive film is provided, wherein the transparent conductive film is formed, and thereafter, unnecessary portions of the transparent conductive film are removed together with a resist using an alkali solution or an organic solvent.
【０００８】本発明は、また、基体上に、透明酸化物層
と金属層とがこの順に交互に（２ｎ＋１）層（ｎ≧１）
積層されてなる透明導電膜が形成された透明電極付き基
体において、前記透明導電膜が、前記のパターニング方
法によりパターニングされた透明導電膜であることを特
徴とする透明電極付き基体を提供する。According to the present invention, a transparent oxide layer and a metal layer are alternately formed on a substrate in this order in a (2n + 1) layer (n ≧ 1).
A substrate with a transparent electrode, wherein the transparent conductive film is a transparent conductive film patterned by the patterning method, wherein the substrate has a transparent conductive film formed thereon.
【０００９】図１に本発明の透明導電膜付き基体の３層
構成の断面模式図を示す。図２に代表的なカラー液晶デ
ィスプレイ用基板の断面模式図を示す。また、図３に
は、本発明のパターニング方法の模式手順を示す。FIG. 1 is a schematic cross-sectional view of a three-layer structure of the substrate with a transparent conductive film of the present invention. FIG. 2 is a schematic cross-sectional view of a typical substrate for a color liquid crystal display. FIG. 3 shows a schematic procedure of the patterning method of the present invention.
【００１０】１はカラーフィルタ付き基板などの基体、
２、４は透明酸化物層、３は金属層を示す。５はガラス
などの透明基板、６はカラー画素となるカラーフィルタ
層、７は透明樹脂保護層、８は無機中間膜層、９はアル
カリ溶液または有機溶媒に可溶なレジストを示す。1 is a substrate such as a substrate with a color filter,
2, 4 are transparent oxide layers, and 3 is a metal layer. Reference numeral 5 denotes a transparent substrate such as glass, 6 denotes a color filter layer serving as a color pixel, 7 denotes a transparent resin protective layer, 8 denotes an inorganic intermediate film layer, and 9 denotes a resist soluble in an alkali solution or an organic solvent.
【００１１】本発明における基体１としては、ガラス板
の他、樹脂製のフィルムや板も使用できる。また、図２
に示すようにガラス基板５上にカラー画素となるカラー
フィルタ層６を形成した基体、さらに、該カラーフィル
タ層上に、カラーフィルタ層を保護、平滑化するための
透明樹脂層７やこれら樹脂層と透明導電膜との密着性を
高めるためのシリカ、ＳｉＮX などの無機中間膜層８を
順次積層した基体を用いてもよい。As the substrate 1 in the present invention, a resin film or plate can be used in addition to a glass plate. FIG.
As shown in FIG. 5, a base on which a color filter layer 6 serving as a color pixel is formed on a glass substrate 5, a transparent resin layer 7 for protecting and smoothing the color filter layer, it may be used sequentially laminated substrate an inorganic intermediate layer 8 of the silica, such as SiN X for increasing the adhesion between the transparent conductive film.
【００１２】透明酸化物層２、４としては、電気抵抗が
低いという理由から、酸化インジウムまたは酸化亜鉛を
主成分とする透明酸化物層が好ましい。As the transparent oxide layers 2, 4, a transparent oxide layer containing indium oxide or zinc oxide as a main component is preferable because of its low electric resistance.
【００１３】特に、酸化インジウムを主成分とする膜と
しては、（Ｉｎ＋Ｓｎ）に対してＳｎを０〜１５原子％
含んだ酸化インジウム、また酸化亜鉛を主成分とする膜
としては、（亜鉛＋添加金属）に対してＧａやＡｌなど
の添加金属を０〜１５原子％含んだ酸化亜鉛膜が好まし
い。In particular, as a film containing indium oxide as a main component, Sn is contained in an amount of 0 to 15 atomic% with respect to (In + Sn).
As the film containing indium oxide or zinc oxide as a main component, a zinc oxide film containing 0 to 15 atomic% of an additional metal such as Ga or Al with respect to (zinc + addition metal) is preferable.
【００１４】これら透明酸化物層のそれぞれの膜厚（幾
何学的膜厚）は、特に限定されないが、好ましい色調お
よびより高い可視光透過率を得るために、１０〜２００
ｎｍが適当である。The thickness (geometric thickness) of each of these transparent oxide layers is not particularly limited, but is preferably from 10 to 200 to obtain a preferable color tone and a higher visible light transmittance.
nm is appropriate.
【００１５】金属層３としては、低い抵抗とより高い可
視光透過率が得られるという理由から、Ａｇを主成分と
する金属層が好ましい。特に、Ａｇの凝集現象を防止
し、耐久性の高いＡｇ膜が得られるという理由から、
（Ａｇ＋Ｐｄ）に対して０．１〜５．０原子％のＰｄを
添加したＡｇ層や、０．１〜３ｎｍのＰｄ膜とＡｇ膜と
を積層させた層とすることが好ましい。また、該金属層
３の膜厚（幾何学的膜厚）は、３〜２０ｎｍが好まし
い。As the metal layer 3, a metal layer containing Ag as a main component is preferable because a low resistance and a higher visible light transmittance can be obtained. In particular, since the Ag aggregation phenomenon is prevented and a highly durable Ag film can be obtained,
It is preferable to use an Ag layer in which 0.1 to 5.0 atomic% of Pd is added to (Ag + Pd) or a layer in which a Pd film having a thickness of 0.1 to 3 nm and an Ag film are laminated. The thickness (geometric thickness) of the metal layer 3 is preferably 3 to 20 nm.
【００１６】かかる理由としては、金属層３の膜厚が３
ｎｍ未満では低いシート抵抗が得られず、２０ｎｍ超過
では可視光透過率の低下をもたらすので好ましくない。The reason is that the thickness of the metal layer 3 is 3
If it is less than nm, a low sheet resistance cannot be obtained, and if it exceeds 20 nm, the visible light transmittance is lowered, which is not preferable.
【００１７】該透明導電膜のパターニング手段として
は、図３（ａ）に示すごとく、基体１上に所望のレジス
トパターンを形成した後に、該透明導電膜を形成し（図
３（ｂ））、その後、図３（ｃ）に示すごとくアルカリ
溶液または有機溶媒により該透明電導膜の不要な部分を
レジストごと剥離する。As a means for patterning the transparent conductive film, as shown in FIG. 3A, after forming a desired resist pattern on the base 1, the transparent conductive film is formed (FIG. 3B). Thereafter, as shown in FIG. 3C, unnecessary portions of the transparent conductive film are removed together with the resist using an alkaline solution or an organic solvent.
【００１８】レジストをエッチングのマスクとして用
い、酸性エッチング液により、透明導電膜の不要な部分
をエッチング除去する従来のパターニング法では、１）
エッチング速度などのエッチング特性が酸化物と金属で
は大きく異なること、２）透明導電膜とレジスト界面の
付着力も十分ではないことなどから、これらの特性を考
慮したエッチング液の組成、エッチング条件の最適化
は、非常に煩雑なものがあり、エッチング残渣が時折発
生し、歩留低下の要因となっていた。また、得られるパ
ターン精度も必ずしも十分なものではなかった。In a conventional patterning method in which an unnecessary portion of a transparent conductive film is removed by etching with an acidic etchant using a resist as an etching mask, 1)
Since the etching characteristics such as the etching rate differ greatly between oxides and metals, and 2) the adhesive force between the transparent conductive film and the resist interface is not sufficient, the composition of the etching solution and the etching conditions are optimized in consideration of these characteristics. However, the production is very complicated, and an etching residue is occasionally generated, which causes a reduction in yield. Further, the obtained pattern accuracy is not always sufficient.
【００１９】本発明においては、アルカリ溶液あるいは
有機溶媒に可溶なレジストを用い、かつ酸を用いずにア
ルカリ溶液または有機溶媒によりパターニングするた
め、前述の酸性エッチング液を用いた不具合が解消され
る。In the present invention, since a resist soluble in an alkali solution or an organic solvent is used and patterning is carried out with an alkali solution or an organic solvent without using an acid, the above-mentioned disadvantages using an acidic etching solution can be solved. .
【００２０】本発明において用いるアルカリ溶液あるい
は有機溶媒に可溶なレジストとしては、透明導電膜や基
体にダメージを与えないものであれば特に限定されず、
感光性材料を含んだノボラック樹脂などが挙げられる。
レジストは、例えば、エチレングリコールモノエチルエ
ーテルモノアセテートなどの有機溶媒に溶かして用いら
れる。The resist used in the present invention that is soluble in an alkaline solution or an organic solvent is not particularly limited as long as it does not damage the transparent conductive film or the substrate.
A novolak resin containing a photosensitive material is exemplified.
The resist is used after being dissolved in an organic solvent such as ethylene glycol monoethyl ether monoacetate.
【００２１】本発明においてパターニングするために用
いるアルカリ溶液としては、透明導電膜や基体にダメー
ジを与えないものであれば特に限定されず、ＮａＯＨを
溶液に対して０．５〜３重量％含んだアルカリ水溶液、
水酸化テトラメチルアンモニウムを溶液に対して２〜３
重量％含んだアルカリ水溶液や、Ｏ−ジクロルベンゼ
ン、フェノール、あるいはアルキルベンゼンスルホン酸
からなるアルカリ溶液などが挙げられる。The alkaline solution used for patterning in the present invention is not particularly limited as long as it does not damage the transparent conductive film or the substrate, and contains 0.5 to 3% by weight of NaOH based on the solution. Alkaline aqueous solution,
Tetramethylammonium hydroxide is added to the solution 2-3 times.
An alkali aqueous solution containing a weight% or an alkaline solution composed of O-dichlorobenzene, phenol, or alkylbenzenesulfonic acid is exemplified.
【００２２】本発明においてパターニングするために用
いる有機溶媒としては、透明導電膜や基体にダメージを
与えないものであれば特に限定されず、イソプロピルア
ルコール、ジメチルスルホキシド、エチレングリコー
ル、トリクレンなどの有機溶媒が挙げられる。The organic solvent used for patterning in the present invention is not particularly limited as long as it does not damage the transparent conductive film or the substrate. Organic solvents such as isopropyl alcohol, dimethyl sulfoxide, ethylene glycol and trichlene are used. No.
【００２３】また、レジストパターンの形成方法につい
ては、数μｍオーダーの微細パターンが容易に得られる
フォトリソグラフィー法が好ましい。As a method of forming a resist pattern, a photolithography method capable of easily obtaining a fine pattern on the order of several μm is preferable.
【００２４】また、効率的にレジストの剥離を行うため
に、レジスト剥離の時に超音波振動を与えたり、柔らか
いブラシなどによりラビングしてもよい。To remove the resist efficiently, ultrasonic vibration may be applied at the time of removing the resist, or rubbing may be performed with a soft brush or the like.
【００２５】また、透明導電膜は、１５０℃以下の基板
温度で形成されることが好ましい。かかる理由として、
１５０℃以上の基板温度では、透明電導膜が緻密にな
り、レジスト剥離液の浸透を妨げ、レジストを容易に剥
離できなくなる他に、成膜の際にレジストの分解が起こ
り、透明導電膜の特性を低下させるためである。Further, it is preferable that the transparent conductive film is formed at a substrate temperature of 150 ° C. or less. For this reason,
At a substrate temperature of 150 ° C. or higher, the transparent conductive film becomes dense, hinders the penetration of the resist stripping solution, and the resist cannot be easily stripped. It is for reducing.
【００２６】以上のように、透明導電膜の成膜温度を１
５０℃以下とすることで、レジスト剥離液の浸透性をよ
くしたり、また、剥離時に機械的な外力を加えることに
よって、より効果的に不要な部分の透明導電膜をレジス
トごと剥離することができ、１μｍ程度と寸法精度の非
常に高い電極パターンを容易に形成できる。As described above, the temperature for forming the transparent conductive film is set to 1
By setting the temperature to 50 ° C. or lower, the permeability of the resist stripping solution is improved, or by applying a mechanical external force at the time of stripping, it is possible to more effectively strip the unnecessary portion of the transparent conductive film together with the resist. Thus, an electrode pattern having a very high dimensional accuracy of about 1 μm can be easily formed.
【００２７】なお、透明導電膜は、低シート抵抗、高可
視光透過率、高耐久性を示すが、さらに特性を向上させ
るために、透明導電膜の成膜直後、あるいはレジストの
剥離後に１００〜３００℃の加熱処理を行ってもよい。The transparent conductive film has low sheet resistance, high visible light transmittance and high durability. However, in order to further improve the characteristics, the transparent conductive film has a thickness of 100 to 100% immediately after forming the transparent conductive film or after removing the resist. A heat treatment at 300 ° C. may be performed.
【００２８】[0028]
【実施例】ガラス基板５上に、カラーフィルタ層６、お
よびカラーフィルタの保護と平滑化のためのアクリル系
樹脂層保護層７、そしてシリカ中間層８があらかじめ形
成された基体１上に、ノボラック系樹脂からなるフォト
レジストを塗布し、通常のフォトリソグラフィー法によ
りライン幅１３０μｍ、スペース幅２５μｍとなるスト
ライプ状パターン９を形成した（図３（ａ））。DESCRIPTION OF THE PREFERRED EMBODIMENTS On a glass substrate 5, a color filter layer 6, a protective layer 7 of an acrylic resin layer for protecting and smoothing the color filters, and a silica A photoresist made of a base resin was applied, and a stripe pattern 9 having a line width of 130 μm and a space width of 25 μm was formed by ordinary photolithography (FIG. 3A).
【００２９】次いで、表１に示すような例１〜５の５種
類の構成の透明導電膜を直流スパッタリング法により、
基板加熱を行わずに形成した（図３（ｂ））。Next, five types of transparent conductive films of Examples 1 to 5 as shown in Table 1 were applied by DC sputtering.
It was formed without heating the substrate (FIG. 3B).
【００３０】なお、表１において、熱処理「有り」の場
合は、透明導電膜形成後に、大気雰囲気で、２５０℃、
３０分という条件で熱処理を行ったことを意味する。In Table 1, in the case of "with heat treatment", after the formation of the transparent conductive film, the film was heated at 250.degree.
This means that the heat treatment was performed for 30 minutes.
【００３１】その後、超音波振動を加えながら、ＮａＯ
Ｈの水溶液により、透明導電膜の不要な部分をレジスト
ごと剥離し、所望の電極パターンを形成した（図３
（ｃ））。Then, while applying ultrasonic vibration, NaO
Unnecessary portions of the transparent conductive film were stripped together with the resist with an aqueous solution of H to form a desired electrode pattern (FIG. 3).
(C)).
【００３２】なお、ＺｎＯを主成分とする膜は、Ｇａを
（Ｇａ＋Ｚｎ）に対して５原子％含むＺｎＯ焼結体ター
ゲットを用い、Ａｒガス３ｍＴｏｒｒの雰囲気下で成膜
した（ＧＺＯ膜と称する）。The film mainly composed of ZnO was formed using a ZnO sintered target containing 5 atomic% of Ga with respect to (Ga + Zn) under an atmosphere of Ar gas at 3 mTorr (referred to as a GZO film). .
【００３３】Ｉｎ2 Ｏ3 を主成分とする膜は、Ｓｎを
（Ｓｎ＋Ｉｎ）に対して１０原子％含むＩｎ2 Ｏ3 焼結
体ターゲットを用い、酸素を３％含んだＡｒガス３ｍＴ
ｏｒｒの雰囲気下で成膜した。The film containing In 2 O 3 as a main component is an In 2 O 3 sintered target containing 10 atomic% of Sn (Sn + In), and an Ar gas containing 3% of oxygen and 3 mT
The film was formed under an atmosphere of orr.
【００３４】金属膜は、Ａｇターゲット、Ｐｄターゲッ
ト、またはＰｄを（Ｐｄ＋Ａｇ）に対して１原子％含む
Ａｇ合金ターゲットを用い、Ａｒガス３ｍＴｏｒｒの雰
囲気下で成膜した。The metal film was formed in an atmosphere of Ar gas at 3 mTorr using an Ag target, a Pd target, or an Ag alloy target containing Pd at 1 atomic% with respect to (Pd + Ag).
【００３５】それぞれの膜厚は、スパッタ電力およびス
パッタ時間により調整した。Each film thickness was adjusted by the sputtering power and the sputtering time.
【００３６】また、比較例（例６〜７）として、従来法
である上記透明導電膜を成膜した後に、フォトリソグラ
フィー法によりライン幅１３０μｍ、スペース幅２５μ
ｍのストライプ状のレジストパターンを形成し、これを
マスクとして、塩化第二鉄を含んだ酸性水溶液により、
透明導電膜を透明導電膜をエッチング除去した。As a comparative example (Examples 6 and 7), after forming the above-mentioned conventional transparent conductive film, a line width of 130 μm and a space width of 25 μm were formed by photolithography.
m is formed in a striped resist pattern, and using this as a mask, with an acidic aqueous solution containing ferric chloride,
The transparent conductive film was removed by etching the transparent conductive film.
【００３７】これらのサンプルの抵抗（Ω／□）、波長
が５５０ｎｍでの透過率を評価するとともにパターニン
グ性を評価し、表１にまとめた。パターニング性は、：
非常に良好で寸法精度１μｍ程度を○とし、寸法精度５
μｍ程度で一部エッチング残渣発生の場合を×とした。The resistance (Ω / □) and the transmittance of these samples at a wavelength of 550 nm were evaluated, and the patterning property was evaluated. Patterning properties are:
Very good, dimensional accuracy of about 1 μm is marked as ○, dimensional accuracy of 5
When the etching residue was partially generated at about μm, it was evaluated as x.
【００３８】本方法を用いた実施例１〜５では、スペー
ス部に透明導電膜の残渣は一切見られず、エッジ形状も
非常にシャープで、しかもパターン幅の寸法精度も１μ
ｍ程度と良好なものが得られた。これに対し、例６〜７
ではエッジ形状はシャープなものが得られるが、一部に
エッチング残渣が発生したり、寸法精度が５μｍ程度と
より悪化した。In Examples 1 to 5 using this method, no residue of the transparent conductive film was observed in the space portion, the edge shape was very sharp, and the dimensional accuracy of the pattern width was 1 μm.
As good as about m were obtained. In contrast, Examples 6-7
In this case, a sharp edge shape was obtained, but etching residues were partially generated, and the dimensional accuracy was further deteriorated to about 5 μm.
【００３９】[0039]
【表１】 [Table 1]
【００４０】[0040]
【発明の効果】本発明によれば、透明酸化物層と金属層
の積層体からなる低比抵抗の透明電導膜を、容易に、数
μｍオーダーで微細電極加工することができる。According to the present invention, a transparent conductive film having a low specific resistance composed of a laminate of a transparent oxide layer and a metal layer can be easily processed into a fine electrode on the order of several μm.
【００４１】したがって、ガラス基板上はもちろんのこ
と、成膜温度の低いプラスチック製基板（耐熱温度１０
０℃以下）やカラーＬＣＤ用のカラーフィルタ付き基板
上（耐熱温度２５０℃以下）に、３Ω／□以下の低抵抗
透明電極が提供可能となる。これにより液晶ディスプレ
イの高精細化、大画面化、表示品位の向上実現を容易に
することができる。Therefore, not only on a glass substrate, but also on a plastic substrate having a low film forming temperature (heat resistant temperature of 10)
A low-resistance transparent electrode having a resistance of 3 Ω / □ or less can be provided on a substrate having a color filter for color LCD (less than 250 ° C.). As a result, it is possible to easily realize a higher definition, a larger screen, and an improved display quality of the liquid crystal display.
【図１】本発明の実施形態の係わる透明導電膜の断面模
式図FIG. 1 is a schematic cross-sectional view of a transparent conductive film according to an embodiment of the present invention.
【図２】本発明に使用される代表的なカラー液晶ディス
プレイ用基板の断面模式図FIG. 2 is a schematic cross-sectional view of a typical substrate for a color liquid crystal display used in the present invention.
【図３】本発明の実施形態に係わるパターニング方法の
工程模式図FIG. 3 is a schematic process diagram of a patterning method according to an embodiment of the present invention.
１：基体 ２：透明酸化物層 ３：金属層 ４：透明酸化物層 ５：ガラス基板 ６：カラーフィルタ層 ７：樹脂保護層 ８：シリカなどの無機中間膜層 ９：レジスト 1: Base 2: transparent oxide layer 3: metal layer 4: transparent oxide layer 5: glass substrate 6: color filter layer 7: resin protective layer 8: inorganic intermediate layer such as silica 9: resist
───────────────────────────────────────────────────── フロントページの続き (72)発明者 宮崎 正美 神奈川県横浜市神奈川区羽沢町1150番地 旭硝子株式会社中央研究所内 (72)発明者 西村 啓道 神奈川県横浜市神奈川区羽沢町1150番地 旭硝子株式会社中央研究所内 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Masami Miyazaki 1150 Hazawa-cho, Kanagawa-ku, Yokohama-shi, Kanagawa Prefecture Inside the Central Research Laboratory Asahi Glass Co., Ltd. Central Research Laboratory
Claims (5)
順に交互に（２ｎ＋１）層（ｎ≧１）積層されてなる透
明導電膜のパターニング法において、基体上に、アルカ
リ溶液または有機溶媒に可溶なレジストを用いて所望の
パターンを形成した後に、前記透明導電膜を形成し、そ
の後、アルカリ溶液あるいは有機溶媒により該透明電導
膜の不要な部分をレジストごと剥離することを特徴とす
る透明導電膜のパターニング方法。In a method for patterning a transparent conductive film comprising a transparent oxide layer and a metal layer alternately laminated in this order on a substrate (2n + 1) layers (n ≧ 1), an alkaline solution or After forming a desired pattern using a resist soluble in an organic solvent, the transparent conductive film is formed, and thereafter, unnecessary portions of the transparent conductive film are removed together with the resist using an alkali solution or an organic solvent. Method for patterning a transparent conductive film.
ジウムまたは酸化亜鉛を主成分とする透明酸化物層であ
る請求項１の透明導電膜のパターニング方法。2. The method according to claim 1, wherein the transparent oxide layer of the transparent conductive film is a transparent oxide layer containing indium oxide or zinc oxide as a main component.
する金属層である請求項１または２の透明導電膜のパタ
ーニング方法。3. The method according to claim 1, wherein the metal layer of the transparent conductive film is a metal layer containing Ag as a main component.
で形成された透明導電膜である請求項１〜３いずれか１
項の透明導電膜のパターニング方法。4. The transparent conductive film according to claim 1, wherein said transparent conductive film is formed at a substrate temperature of 150 ° C. or lower.
The method for patterning a transparent conductive film according to the above item.
順に交互に（２ｎ＋１）層（ｎ≧１）積層されてなる透
明導電膜が形成された透明電極付き基体において、前記
透明導電膜が、請求項１〜４いずれか１項のパターニン
グ方法によりパターニングされた透明導電膜であること
を特徴とする透明電極付き基体。5. The substrate with a transparent electrode, wherein a transparent conductive film is formed by laminating (2n + 1) layers (n ≧ 1) of a transparent oxide layer and a metal layer alternately in this order on the substrate. A substrate with a transparent electrode, wherein the conductive film is a transparent conductive film patterned by the patterning method according to claim 1.
Priority Applications (1)
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|---|---|---|---|
| JP17689996A JPH1020320A (en) | 1996-07-05 | 1996-07-05 | Method for patterning transparent conductive film and substrate with transparent electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17689996A JPH1020320A (en) | 1996-07-05 | 1996-07-05 | Method for patterning transparent conductive film and substrate with transparent electrode |
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| Publication Number | Publication Date |
|---|---|
| JPH1020320A true JPH1020320A (en) | 1998-01-23 |
Family
ID=16021707
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17689996A Pending JPH1020320A (en) | 1996-07-05 | 1996-07-05 | Method for patterning transparent conductive film and substrate with transparent electrode |
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| Country | Link |
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| JP (1) | JPH1020320A (en) |
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1996
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| JP2008506272A (en) * | 2004-07-12 | 2008-02-28 | グァンジュ インスティチュート オブ サイエンス アンド テクノロジー | Flip-chip nitride-based light emitting device and method for manufacturing the same |
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| JP2008507842A (en) * | 2004-07-23 | 2008-03-13 | グァンジュ インスティチュート オブ サイエンス アンド テクノロジー | Top-emitting nitride-based light emitting device and method for manufacturing the same |
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| JP2013065889A (en) * | 2004-07-23 | 2013-04-11 | Samsung Electronics Co Ltd | Top emit type nitride-based light emitting element |
| KR100968809B1 (en) | 2008-09-30 | 2010-07-08 | 한국전자통신연구원 | METHOD OF FORMING ZnO NANO PATTERN |
| KR101273760B1 (en) * | 2011-01-10 | 2013-06-12 | 경희대학교 산학협력단 | Transparent electode, transparent antena and method for manufacturing the transparent electode |
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