JPS61260594A - Manufacture of multicolor emission el element - Google Patents
Manufacture of multicolor emission el elementInfo
- Publication number
- JPS61260594A JPS61260594A JP60103001A JP10300185A JPS61260594A JP S61260594 A JPS61260594 A JP S61260594A JP 60103001 A JP60103001 A JP 60103001A JP 10300185 A JP10300185 A JP 10300185A JP S61260594 A JPS61260594 A JP S61260594A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light
- multicolor
- emitting
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 29
- 238000005530 etching Methods 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 10
- 239000003086 colorant Substances 0.000 claims description 7
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 238000000206 photolithography Methods 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 238000005566 electron beam evaporation Methods 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 3
- 238000010884 ion-beam technique Methods 0.000 claims description 3
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims description 2
- 239000005083 Zinc sulfide Substances 0.000 claims description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 2
- 239000010409 thin film Substances 0.000 description 12
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 239000011521 glass Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910004299 TbF3 Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910010252 TiO3 Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- LKNRQYTYDPPUOX-UHFFFAOYSA-K trifluoroterbium Chemical compound F[Tb](F)F LKNRQYTYDPPUOX-UHFFFAOYSA-K 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
この発明は薄膜ＥＬ素子の製造法に関し、とシわけ同一
基板上に発光色が異なる部分が形成された多色発光ＥＬ
素子の製造法を提供するものである０
従来の技術
ＯＡ機器などに用いる表示装置として、ＥＬ表示素子が
盛んに研究されている。現在実用化されているＥＬ表示
素子は螢光体薄膜として、黄橙色発光のＺｎＳ：Ｍｎ薄
膜のみを用いたモノカラー表示である。多くの情報を見
やすく表示するためには多色表示が必要であるため、多
色表示可能なＥＬ表示素子の研究も活発に行われている
。多色表示可能なＥＬ表示素子は、従来フォトリングラ
フィー技術を用いて、螢光体薄膜の形成、螢光体薄膜上
へのフォトレジストパターンの形成および螢光体薄膜の
不要部のエツチングによる除去を繰り返すことにより発
光色の異なる螢光体薄膜を所望のパターンに形成したり
、特開昭５９−１２３１９３号公報に記載のように、発
光母体薄膜に、複数種の発光中心となる金属イオンを、
フォトレジストをマスクとして各領域を規定しながら注
入して所定パターンの発光中心を含む螢光体薄膜を形成
していた。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application This invention relates to a method for manufacturing a thin film EL device, and specifically relates to a method for manufacturing a thin film EL device, and in particular to a multicolor EL device in which portions emitting light of different colors are formed on the same substrate.
2. Description of the Related Art EL display elements are being actively researched as display devices used in office automation equipment and the like. The EL display element currently in practical use is a monocolor display using only a yellow-orange emitting ZnS:Mn thin film as a phosphor thin film. Since multicolor display is necessary to display a large amount of information in an easy-to-see manner, research into EL display elements capable of multicolor display is being actively conducted. EL display elements capable of displaying multiple colors conventionally use photolithography technology to form a phosphor thin film, form a photoresist pattern on the phosphor thin film, and remove unnecessary portions of the phosphor thin film by etching. By repeating this step, a phosphor thin film with different luminescent colors can be formed into a desired pattern, or as described in JP-A-59-123193, multiple types of metal ions serving as luminescent centers can be added to a luminescent matrix thin film. ,
A phosphor thin film containing a predetermined pattern of luminescent centers was formed by implanting the phosphor while defining each region using a photoresist as a mask.
発明が解決しようとする問題点
従来のフォトリングラフイー技術を用いて同一基板上に
所望の形状に、互いに発光色が異なる複数種の発光体層
を形成する際、主成分が同一の材料を用い、はぼ同一の
プロセスで発光体層を形成した場合、各発光体層のエツ
チングレートはほぼ等しくなるｔしたがって第１発光体
層の上部に形成された第２発光体層のみをエツチングす
る場合、第１発光体層までオーバーエツチングされたり
、第２発光体層のエツチング残りが生じ、エラチン、グ
時間や、エツチング液の温度のコントロールが極めて難
しいという問題点があった。Problems to be Solved by the Invention When forming multiple types of light emitter layers with different luminescent colors on the same substrate in a desired shape using conventional photophosphorography technology, it is difficult to use materials with the same main component. If the phosphor layers are formed using the same process, the etching rate of each phosphor layer will be approximately equal. Therefore, if only the second phosphor layer formed on top of the first phosphor layer is etched. However, there are problems in that the first phosphor layer is over-etched, the second phosphor layer is left unetched, and it is extremely difficult to control the etching time and the temperature of the etching solution.
また、イオン注入法を用いる場合は、大型のイオン注入
装置が必要となり装置が高価なものとな、ることや、生
産性を高めるのが困難であるという問題点があった。Further, when using the ion implantation method, there are problems in that a large ion implantation device is required, which makes the device expensive, and that it is difficult to increase productivity.
問題点を解決するだめの手段
発光体層の熱処理の有無によるエツチングレートの差異
を利用し、発光体層の堆積からなる第１工程２発光体層
の１部をエツチングにより除去する第２工程、および発
光体層の熱処理からなる第３工程を、順次複数回繰り返
すことによシ、互いに発光色が異なる複数種の発光体層
を同一基板上に形成する。Means for solving the problem Utilizing the difference in etching rate depending on the presence or absence of heat treatment of the phosphor layer, the first step consists of depositing the phosphor layer.2 The second step consists of removing a part of the phosphor layer by etching. By sequentially repeating the third step of heat-treating the light-emitting layer a plurality of times, a plurality of types of light-emitting layers having different luminescent colors are formed on the same substrate.
作 用 ＥＬ素子発光体層には、黄色発光、緑色発光。For production The EL element emitter layer emits yellow light and green light.
赤色発光、あるいは青色発光用として、それぞれ、Ｍｎ
、Ｔｂ、ＳｍあるいはＴｍを添加した硫化亜鉛が知られ
ている。これらの発光体層をスパッタリング法や、真空
蒸着法で形成した場合、エツチングレートはほぼ等しい
。しかしこれらの膜は、熱処理することにより、エツチ
ングレートが極めて小さくなることを見い出した。この
効果を利用し、第１の発光体層の上部に形成された第２
、の発光体層のみをエツチングする場合、第１の発光体
層をあらかじめ熱処理した後、第２の発光体層を堆積さ
せ、第２の発光体層のエツチングレートから計算される
エツチング時間より十分長い時間エツチングしても、第
１の発光体層までオーバーエツチングすることなく、第
２の発光体層のみをエツチングすることができる。For red light emission or blue light emission, Mn
Zinc sulfide to which Tb, Sm, or Tm is added is known. When these phosphor layers are formed by sputtering or vacuum evaporation, the etching rates are approximately the same. However, it has been found that the etching rate of these films becomes extremely small by heat treatment. Utilizing this effect, a second light emitter layer formed on top of the first light emitting layer
When etching only the phosphor layer, the first phosphor layer is heat-treated in advance, and then the second phosphor layer is deposited, and the etching time is longer than the etching time calculated from the etching rate of the second phosphor layer. Even if etching is performed for a long time, only the second phosphor layer can be etched without over-etching the first phosphor layer.
実施例
４ｈ、オッ、えよ、多。工、４イ。ヨ、工を説明するた
めの素子断面の製造工程を示す◇ａに示すように、まず
ガラス基板１上にスパッタリング法により厚さ３００
ｎｍの錫添加酸化インジウム（Ｉ Ｔｏ ）の薄膜を形
成し、フォトリングラフィ技術を用いてストライプ状の
ＩＴＯ透明電極２を形成した。その上に、酸素を含むア
ルゴン雰囲気中でＳ ｒ Ｔ ｉＯ３焼結体ターゲット
を高周波スパッタリングすることにより、厚さ６００
ｎｍの第１絶縁体層３を形成した。次にｂに示すように
、第１絶縁体層３の上に、基板温度１８０°でＴｂＦ３
を４重量％添加したＺｎＳ 焼結体を電子ビーム蒸着し
、厚さ５００ ｎｍの第１発光体層４を堆積させた◇第
１発光体層４の上に、フォトリングラフィ技術を用いて
第１図Ｃに示すようなストライプ状の７オトレジスト５
を形成した。この基板をＨＮＯ３：Ｈ２ｏ＝１：３のエ
ツチング液に２分間浸漬することにより第１発光体層の
不要部を除去し、その後フォトレジスト８を除去し、ス
トライプ状の第１発光体層４を形成した（第１図ｄ）、
。その後第１発光体層４のエツチングレートを減少させ
るため、真空中６００℃で６０分間熱処理した◇この処
理により第１発光体層４のエツチングレートは１／１０
０〜１／１ｏｏＯに減少した。Example 4h, oh, oh, so much. Engineering, 4i. ◇ As shown in ◇a, which shows the manufacturing process of the device cross section to explain the process, first, a layer of 300 mm thick is deposited on the glass substrate 1 by sputtering method.
A thin film of tin-doped indium oxide (I To ) was formed to form a striped ITO transparent electrode 2 using a photolithography technique. On top of that, a S r TiO3 sintered body target with a thickness of 600 mm was formed by high-frequency sputtering in an argon atmosphere containing oxygen.
A first insulator layer 3 having a thickness of 1 nm was formed. Next, as shown in b, TbF3 was deposited on the first insulator layer 3 at a substrate temperature of 180°.
A ZnS sintered body doped with 4 wt% of 1 Striped 7-otoresist 5 as shown in Figure C
was formed. By immersing this substrate in an etching solution of HNO3:H2o=1:3 for 2 minutes, unnecessary parts of the first light emitter layer are removed, and then the photoresist 8 is removed and a striped first light emitter layer 4 is formed. formed (Fig. 1d),
. Thereafter, in order to reduce the etching rate of the first light emitter layer 4, heat treatment was performed at 600°C for 60 minutes in vacuum.◇This treatment reduced the etching rate of the first light emitter layer 4 to 1/10.
It decreased to 0 to 1/1ooO.
次に第１図ｅに示すように、ストライプ状の第１発光体
層４を形成した基板の上に、基板温度１８０ ℃でＳ
ｔｎ Ｆ ３を２重量％添加したＺｎＳ 焼結体を電
子ビーム蒸着し、厚さ５００ｎｍの第２発光体層６を堆
積させた。次にｆに示すように、第２発光体層６の上に
、フォトリングラフィー技術を用いてストライプ状のフ
ォトレジストアを形成した。この基板をＨＮＯ３：Ｈ２
ｏ＝１＝３のエツチング液に２分間浸漬することにより
、第１発光体層を侵すことなく第２発光体層６の不要部
を除去し、その後フォトレジスト７を除去し、ｑに示す
ようにストライプ状の第２発光体層６を形成した。Next, as shown in FIG.
A ZnS sintered body to which 2% by weight of tnF 3 was added was subjected to electron beam evaporation to deposit a second light emitting layer 6 with a thickness of 500 nm. Next, as shown in f, a striped photoresist was formed on the second light emitter layer 6 using a photolithography technique. This substrate is HNO3:H2
By immersing it in an etching solution of o=1=3 for 2 minutes, unnecessary parts of the second light emitting layer 6 are removed without damaging the first light emitting layer, and then the photoresist 7 is removed, as shown in q. A striped second light emitter layer 6 was formed on the substrate.
次に第２発光体層ｅの輝度の向上を目的として、真空中
５６℃で３０分間熱処理を行った後、ｈに示すように、
電子ビーム蒸着法により、厚さ１１００ｎのＹ２Ｏ２か
ら成る第２絶縁体層８および厚さ２００ｎｍのＡＩから
なるストライプ状背面電極９を順次形成することにより
、多色発光ＥＬ素子を完成した。Next, in order to improve the brightness of the second light emitter layer e, heat treatment was performed at 56°C for 30 minutes in vacuum, and then as shown in h,
A second insulating layer 8 made of Y2O2 with a thickness of 1100 nm and a striped back electrode 9 made of AI with a thickness of 200 nm were successively formed by electron beam evaporation to complete a multicolor light emitting EL device.
このように形成した素子の透明電極２と背面電極９との
間に、１２ｏｖの交流電圧を印加することにより、それ
らの電極の交点が発光した。たとえば交点にある発光体
層が第１発光体層４である場合には緑色に、第２発光体
層６である場合には赤色に発光し、多色で文字や図形を
表示することができた・
本実施例では、ＺｎＳ を主成分とする発光体層を用
いた場合について説明したが、アルカリ土類元素の硫化
物（たとえばＣａｂ、ＳｒＳ、ＢａＳなど）を主成分と
する発光体層を用いた場合も本発明を実施することがで
きた。また発光体層の基板への堆積手段として電子ビー
ム蒸着法を用いた場合について説明したが、スパッタリ
ング法やクラスターイオンビーム蒸着法などを用いて発
光体層を堆積しても本発明を実施することができた◇本
実節例で形成した素子は２種類の発光体層を有するが、
３種類以上の発光体層も本実施例の方法を繰り返すこと
により形成可能なことは明らかである。また各種発光体
層の発光輝度を向上させるための熱処理温度が異なる場
合、熱処理温度の高い方から、堆積、エツチング加工、
および熱処理の工程を繰り返すことにより、複数種の発
光体層をそれぞれの最適温度で熱処理することができる
。熱処理温度としては、エツチングレートを減少させる
ためには３００℃以上必要であり、ガラス基板の変形や
薄膜間相互の拡散を防ぐためには、ガラスの種類に依存
するが高珪酸ガラスの場合７６０℃以下が望ましかった
。By applying an AC voltage of 12 ov between the transparent electrode 2 and the back electrode 9 of the element thus formed, the intersection of these electrodes emitted light. For example, when the light emitting layer at the intersection is the first light emitting layer 4, it emits green light, and when it is the second light emitting layer 6, it emits red light, making it possible to display characters and figures in multiple colors. - In this example, a case was explained in which a phosphor layer containing ZnS as a main component was used, but a phosphor layer containing a sulfide of an alkaline earth element (for example, Cab, SrS, BaS, etc.) as a main component may also be used. The present invention was also able to be carried out when using this method. Furthermore, although the case where the electron beam evaporation method is used as a means for depositing the luminescent layer on the substrate has been described, the present invention can also be carried out even if the luminescent layer is deposited using a sputtering method, a cluster ion beam evaporation method, or the like. ◇The device formed in this example has two types of light emitting layers,
It is clear that three or more types of light emitter layers can be formed by repeating the method of this example. In addition, if the heat treatment temperatures for improving the luminance of various light emitting layers are different, the one with the higher heat treatment temperature will be used for deposition, etching, and
By repeating the steps of and heat treatment, it is possible to heat treat multiple types of light emitter layers at their respective optimum temperatures. The heat treatment temperature is required to be 300°C or higher to reduce the etching rate, and 760°C or lower for high silicate glass, depending on the type of glass, to prevent deformation of the glass substrate and mutual diffusion between thin films. was desirable.
発明の効果
本発明によれば従来のフォトリングラフィ技術を用いて
、容易に同一基板上に所望の形状の複数種の発光体層を
形成することができ、多色発光ＥＬ素子を形成する上に
おいて実用的価値は多きい。Effects of the Invention According to the present invention, it is possible to easily form a plurality of types of light-emitting layers in desired shapes on the same substrate using conventional photolithography technology, and it is possible to easily form a plurality of types of light-emitting layers in desired shapes. It has a lot of practical value.
子の製造法を説明するための断面図である◎１・・・・
・・ガラス基板、２・・・・・・透明電極、３，８・・
・・・・絶縁体層、４，６・・・・・・発光体層、６，
７・・・・・・フォトレジスト、９・・・・・・背面電
極。This is a cross-sectional view for explaining the method of manufacturing a child.◎1...
...Glass substrate, 2...Transparent electrode, 3,8...
...Insulator layer, 4,6... Luminescent layer, 6,
7...Photoresist, 9...Back electrode.
Claims (7)
光体層の１部をエッチングにより除去し、所望のパター
ンの発光体層を形成する第２工程、および前記所望のパ
ターンの発光体層を熱処理する第３工程の３種の工程を
含む工程を順次、複数回繰り返すことにより、互いに発
光色の異なる複数種の発光体層を同一基板上に形成する
ことを特徴とする多色発光ＥＬ素子の製造法。(1) A first step of depositing a phosphor layer on a substrate, a second step of removing a portion of the phosphor layer by etching to form a phosphor layer in a desired pattern, and emitting light in the desired pattern. A multicolor device characterized in that a plurality of types of light emitting layers having different luminescent colors are formed on the same substrate by sequentially repeating a step including three types of steps of a third step of heat treating the body layer multiple times. A method for manufacturing a light emitting EL element.
とする特許請求の範囲第１項に記載の多色発光ＥＬ素子
の製造法。(2) The method for producing a multicolor light-emitting EL device according to claim 1, wherein the luminescent layer contains zinc sulfide as a main component.
とすることを特徴とする特許請求の範囲第１項に記載の
多色発光ＥＬ素子の製造法。(3) The method for producing a multicolor light-emitting EL device according to claim 1, wherein the light emitting layer contains a sulfide of an alkaline earth element as a main component.
℃以下であることを特徴とする特許請求の範囲第１項に
記載の多色発光ＥＬ素子の製造法。(4) The heat treatment temperature of the luminescent layer is 300°C or higher, 750°C
The method for manufacturing a multicolor light emitting EL device according to claim 1, characterized in that the temperature is below .degree.
高い発光体層から低い発光体層の順に基板上への堆積を
行うことを特徴とする特許請求の範囲第１項に記載の多
色発光ＥＬ素子の製造法。(5) Multicolor light emission according to claim 1, characterized in that the luminescent layers are deposited on the substrate in the order of optimal heat treatment temperature from high to low in order to improve luminance. EL element manufacturing method.
蒸着法，イオンビーム蒸着法，クラスターイオンビーム
蒸着法，あるいはスパッタリング法であることを特徴と
する特許請求の範囲第１項に記載の多色発光ＥＬ素子の
製造法。(6) Claim 1, characterized in that the means for depositing the phosphor layer on the substrate is an electron beam evaporation method, an ion beam evaporation method, a cluster ion beam evaporation method, or a sputtering method. A method for manufacturing a multicolor EL device.
実施することを特徴とする特許請求の範囲第１項に記載
の多色発光ＥＬ素子の製造法。(7) The method for manufacturing a multicolor light-emitting EL device according to claim 1, wherein the second step is carried out using a photolithography technique.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60103001A JPS61260594A (en) | 1985-05-15 | 1985-05-15 | Manufacture of multicolor emission el element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60103001A JPS61260594A (en) | 1985-05-15 | 1985-05-15 | Manufacture of multicolor emission el element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61260594A true JPS61260594A (en) | 1986-11-18 |
| JPH0515037B2 JPH0515037B2 (en) | 1993-02-26 |
Family
ID=14342432
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60103001A Granted JPS61260594A (en) | 1985-05-15 | 1985-05-15 | Manufacture of multicolor emission el element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61260594A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6366896A (en) * | 1986-09-09 | 1988-03-25 | 日本電信電話株式会社 | Display device and manufacture of the same |
| JPS646395A (en) * | 1987-06-26 | 1989-01-10 | Matsushita Electric Ind Co Ltd | Manufacture of thin film el panel |
| JPS6467895A (en) * | 1987-09-07 | 1989-03-14 | Matsushita Electric Ind Co Ltd | Color el display device |
| JPS6486477A (en) * | 1987-09-29 | 1989-03-31 | Matsushita Electric Ind Co Ltd | Color el display device |
| JPH01221892A (en) * | 1988-02-29 | 1989-09-05 | Matsushita Electric Ind Co Ltd | Multicolor luminous el display device |
| JPH0212793A (en) * | 1988-06-30 | 1990-01-17 | Pioneer Electron Corp | Manufacture of multicolor solid-state display |
| JPH02152192A (en) * | 1988-12-01 | 1990-06-12 | Matsushita Electric Ind Co Ltd | Manufacture of thin film multicolor el element |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58102487A (en) * | 1981-12-14 | 1983-06-18 | 富士通株式会社 | Method of producing el display unit |
-
1985
- 1985-05-15 JP JP60103001A patent/JPS61260594A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58102487A (en) * | 1981-12-14 | 1983-06-18 | 富士通株式会社 | Method of producing el display unit |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6366896A (en) * | 1986-09-09 | 1988-03-25 | 日本電信電話株式会社 | Display device and manufacture of the same |
| JPS646395A (en) * | 1987-06-26 | 1989-01-10 | Matsushita Electric Ind Co Ltd | Manufacture of thin film el panel |
| JP2605720B2 (en) * | 1987-06-26 | 1997-04-30 | 松下電器産業株式会社 | Method for manufacturing thin-film EL panel |
| JPS6467895A (en) * | 1987-09-07 | 1989-03-14 | Matsushita Electric Ind Co Ltd | Color el display device |
| JPS6486477A (en) * | 1987-09-29 | 1989-03-31 | Matsushita Electric Ind Co Ltd | Color el display device |
| JPH01221892A (en) * | 1988-02-29 | 1989-09-05 | Matsushita Electric Ind Co Ltd | Multicolor luminous el display device |
| JPH07118387B2 (en) * | 1988-02-29 | 1995-12-18 | 松下電器産業株式会社 | Multicolor EL display device |
| JPH0212793A (en) * | 1988-06-30 | 1990-01-17 | Pioneer Electron Corp | Manufacture of multicolor solid-state display |
| JPH02152192A (en) * | 1988-12-01 | 1990-06-12 | Matsushita Electric Ind Co Ltd | Manufacture of thin film multicolor el element |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0515037B2 (en) | 1993-02-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS61260594A (en) | Manufacture of multicolor emission el element | |
| JP2848277B2 (en) | EL element manufacturing method | |
| JP3027286B2 (en) | Method for manufacturing thin film EL element | |
| JPS61203591A (en) | Manufacture of thin film el element | |
| JPS58102487A (en) | Method of producing el display unit | |
| JPS61168895A (en) | Manufacture of el display element | |
| JPS61121290A (en) | Manufacture of thin film el element | |
| JPS61151996A (en) | Thin film electroluminescence element and manufacture thereof | |
| JPH0690954B2 (en) | Method for forming transparent electrode for electroluminescent display | |
| JPS63136491A (en) | Manufacture of thin film el device | |
| JPH0371594A (en) | Manufacture of fluorescent thin film | |
| JPS6250958B2 (en) | ||
| JPH0580797B2 (en) | ||
| JPH0834125B2 (en) | Method for manufacturing multicolor thin film EL device | |
| JPS60172196A (en) | Electroluminescent element and method of producing same | |
| JPS61185890A (en) | Manufacture of thin film el element | |
| JPS63294693A (en) | Manufacture of film electroluminescent element | |
| JPH011789A (en) | Method for manufacturing sulfide phosphor film | |
| JPH07118387B2 (en) | Multicolor EL display device | |
| JPH0685353B2 (en) | Method for forming thin film EL element | |
| JPS6298595A (en) | Manufacture of thin film el device | |
| JPH08162272A (en) | El element and manufacture thereof | |
| JPS61214395A (en) | Manufacture of thin film electroluminescence element | |
| JPH05152069A (en) | Thin film el element and manufacture thereof | |
| JPS62110299A (en) | Manufacture of thin film el device |