JPH011789A - Method for manufacturing sulfide phosphor film - Google Patents
Method for manufacturing sulfide phosphor filmInfo
- Publication number
- JPH011789A JPH011789A JP62-156820A JP15682087A JPH011789A JP H011789 A JPH011789 A JP H011789A JP 15682087 A JP15682087 A JP 15682087A JP H011789 A JPH011789 A JP H011789A
- Authority
- JP
- Japan
- Prior art keywords
- sulfide
- phosphor film
- phosphorus
- rare earth
- sulfide phosphor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims description 47
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 title claims description 32
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 238000000034 method Methods 0.000 title description 5
- 239000010408 film Substances 0.000 claims description 29
- 229910052698 phosphorus Inorganic materials 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 14
- 239000011574 phosphorus Substances 0.000 claims description 14
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 13
- 239000010409 thin film Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 8
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 8
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 5
- 239000012298 atmosphere Substances 0.000 claims description 5
- 229910052771 Terbium Inorganic materials 0.000 claims description 4
- 239000005083 Zinc sulfide Substances 0.000 claims description 4
- JGIATAMCQXIDNZ-UHFFFAOYSA-N calcium sulfide Chemical compound [Ca]=S JGIATAMCQXIDNZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 4
- CJDPJFRMHVXWPT-UHFFFAOYSA-N barium sulfide Chemical compound [S-2].[Ba+2] CJDPJFRMHVXWPT-UHFFFAOYSA-N 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 3
- FAIAAWCVCHQXDN-UHFFFAOYSA-N phosphorus trichloride Chemical compound ClP(Cl)Cl FAIAAWCVCHQXDN-UHFFFAOYSA-N 0.000 claims description 3
- WKFBZNUBXWCCHG-UHFFFAOYSA-N phosphorus trifluoride Chemical compound FP(F)F WKFBZNUBXWCCHG-UHFFFAOYSA-N 0.000 claims description 3
- ZEGFMFQPWDMMEP-UHFFFAOYSA-N strontium;sulfide Chemical compound [S-2].[Sr+2] ZEGFMFQPWDMMEP-UHFFFAOYSA-N 0.000 claims description 3
- 150000004763 sulfides Chemical class 0.000 claims description 3
- 229910052684 Cerium Inorganic materials 0.000 claims description 2
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 2
- 229910052691 Erbium Inorganic materials 0.000 claims description 2
- 229910052693 Europium Inorganic materials 0.000 claims description 2
- 229910052689 Holmium Inorganic materials 0.000 claims description 2
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 2
- 229910052772 Samarium Inorganic materials 0.000 claims description 2
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 claims description 2
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims description 2
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims description 2
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 claims description 2
- 230000006698 induction Effects 0.000 claims description 2
- 150000003018 phosphorus compounds Chemical class 0.000 claims description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 2
- UHZYTMXLRWXGPK-UHFFFAOYSA-N phosphorus pentachloride Chemical compound ClP(Cl)(Cl)(Cl)Cl UHZYTMXLRWXGPK-UHFFFAOYSA-N 0.000 claims description 2
- OBCUTHMOOONNBS-UHFFFAOYSA-N phosphorus pentafluoride Chemical compound FP(F)(F)(F)F OBCUTHMOOONNBS-UHFFFAOYSA-N 0.000 claims description 2
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 claims description 2
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 claims description 2
- 229910052775 Thulium Inorganic materials 0.000 claims 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 claims 1
- 150000001805 chlorine compounds Chemical class 0.000 claims 1
- 150000002222 fluorine compounds Chemical class 0.000 claims 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims 1
- -1 phosphorus compound Chemical class 0.000 claims 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 239000005132 Calcium sulfide based phosphorescent agent Substances 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000013146 percutaneous coronary intervention Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- XXCMBPUMZXRBTN-UHFFFAOYSA-N strontium sulfide Chemical compound [Sr]=S XXCMBPUMZXRBTN-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、硫化物蛍光体膜の製造方法に関し、とくにＥ
Ｌ素子用の蛍光体膜に適した、発光輝度や効率の優れた
硫化物蛍光体膜の製造方法に関するものである
従来の技術
近年、テルビウム添加硫化亜鉛（ＺｎＳ：Ｔｂ）やセリ
ウム添加硫化ストロンチウム（ＳｒＳ：Ｃｅ）などの、
希土類元素を添加した硫化物蛍光体膜はＥＬ素子用の蛍
光体膜として用いるため、広く研究されている。これは
ＥＬ素子の発光輝度や効率が蛍光体膜の特性によりほぼ
決定されるためである。また、これらの蛍光体材料に電
荷補償のために燐（Ｐ）を導入することにより輝度の向
上が可能であることも知られている（特願昭５８−２０
６０６号）。燐を含む硫化物蛍光体膜は、主に燐を含む
硫化物蛍光体材料をターゲットとしてスパッタリングす
ることにより形成されており、さらに優れた特性の蛍光
体膜が再現性良く容易に形成できる製造方法の開発が望
まれている。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for manufacturing a sulfide phosphor film, and in particular to an E
Conventional technology relates to a method for manufacturing a sulfide phosphor film with excellent luminance and efficiency, suitable for a phosphor film for L elements.In recent years, terbium-doped zinc sulfide (ZnS:Tb) and cerium-doped strontium sulfide ( SrS:Ce), etc.
Sulfide phosphor films doped with rare earth elements have been widely studied because they are used as phosphor films for EL devices. This is because the luminance and efficiency of the EL element are almost determined by the characteristics of the phosphor film. It is also known that brightness can be improved by introducing phosphorus (P) into these phosphor materials for charge compensation (Japanese Patent Application No. 58-20
No. 606). Sulfide phosphor films containing phosphorus are mainly formed by sputtering using a sulfide phosphor material containing phosphorus as a target, and this manufacturing method allows for easy formation of phosphor films with excellent characteristics with good reproducibility. development is desired.
発明が解決しようとする問題点
燐を含む硫化物蛍光体材料をターゲットとしてスパッタ
リングすることにより硫化物蛍光体膜を形成した場合、
燐元素の蒸気圧が比較的高いため、ターゲットから放出
されやす（、ターゲットの使用時間やターゲットに投入
する電力の大きさにより、形成された硫化物蛍光体膜中
の燐濃度が変化することがあり、そのため発光特性が低
下したり、再現性が良（ない場合があることが判明した
。Problems to be Solved by the Invention When a sulfide phosphor film is formed by sputtering using a sulfide phosphor material containing phosphorus as a target,
Since the vapor pressure of elemental phosphorus is relatively high, it is easily released from the target (the phosphorus concentration in the formed sulfide phosphor film may change depending on the usage time of the target and the amount of power input to the target). It has been found that the luminescence properties may deteriorate or the reproducibility may be poor (sometimes not).
問題点を解決するための手段
燐、あるいは燐化合物からなるガス雰囲気中で、希土類
元素あるいは希土類元素を含む化合物および硫化物を加
熱蒸発させ、基板上に燐元素および希土類元素を含む硫
化物薄膜を堆積させる。Means to Solve the Problems Rare earth elements or compounds containing rare earth elements and sulfides are heated and evaporated in a gas atmosphere consisting of phosphorus or phosphorus compounds to form a thin film of sulfide containing phosphorus and rare earth elements on a substrate. deposit
作用
本発明の製造方法によれば、基板表面に希土類元素を含
む硫化物薄膜が堆積する際、雰囲気中の燐元素が、常に
一定量薄膜中に取り込まれ、燐濃度の安定した硫化物薄
膜を再現性良（製造できたものと考えられる。また、ス
パッタリング法では問題とされる高速イオンによる薄膜
へのダメージもな（、発光効率の優れた蛍光体薄膜を再
現性良く製造できたものと考えられる。Effect: According to the manufacturing method of the present invention, when a sulfide thin film containing a rare earth element is deposited on the substrate surface, a certain amount of phosphorus element in the atmosphere is always incorporated into the thin film, making it possible to form a sulfide thin film with a stable phosphorus concentration. It is considered that the phosphor thin film with excellent luminous efficiency was manufactured with good reproducibility (it is considered that the thin film was manufactured with good reproducibility, and there was no damage to the thin film due to high-speed ions, which is a problem with the sputtering method). It will be done.
実施例
第１図は本発明の硫化物蛍光体膜の製造方法を説明する
ためのＥＬ素子構造を示す。ガラス基板１上に、スパッ
タリング法により厚さ３００ｎｍの錫添加酸化インジウ
ム（ＩＴＯ）膜を形成し、ホトリソグラフィ技術を用い
てストライプ状のＩＴｏ透明電極２を形成した。その上
に、酸素を含むアルゴン雰囲気中で５ｒＴｉＣｈセラミ
ツクターゲツトを高周波スパッタリングすることにより
、厚さ５００ｎｍの５ｒＴｉ０２からなる第１絶縁体層
３を形成した。第１絶縁体層３の上には基板温度２００
℃で、厚さ６００ｎｍのＺｎＳ：Ｔｂ、Ｐからなる硫化
物蛍光体膜４を形成した。この際、Ｔｂ金属とＺｎＳ焼
結体とを別々のるつぼに入れ、０．５原子％のＴｂを含
むＺｎＳ薄膜が６０ｎｍ／分の堆積速度で形成されるよ
うにそれぞれのるつぼの温度を制御し、それぞれの物質
を適当な速さで加熱蒸発させた。Embodiment FIG. 1 shows the structure of an EL device for explaining the method of manufacturing a sulfide phosphor film of the present invention. A tin-doped indium oxide (ITO) film with a thickness of 300 nm was formed on a glass substrate 1 by a sputtering method, and a striped ITo transparent electrode 2 was formed using a photolithography technique. Thereon, a first insulating layer 3 made of 5rTi02 having a thickness of 500 nm was formed by high-frequency sputtering of a 5rTiCh ceramic target in an argon atmosphere containing oxygen. On the first insulator layer 3, the substrate temperature is 200.
℃, a sulfide phosphor film 4 made of ZnS:Tb, P and having a thickness of 600 nm was formed. At this time, the Tb metal and the ZnS sintered body were placed in separate crucibles, and the temperature of each crucible was controlled so that a ZnS thin film containing 0.5 at% Tb was formed at a deposition rate of 60 nm/min. , each substance was heated and evaporated at an appropriate rate.
蒸着中の雰囲気ガスとしてＩ Ｘ １Ｏ−６Ｔｏｒｒの
ＰＣＩ２ガスを用いた。成膜後、真空中６００℃で１時
間熱処理を行った。蛍光体膜４の上に電子ビーム加熱真
空蒸着法により、厚さ２００ｎｍのＹ２Ｏ３からなる第
２絶縁体層５を形成し、さらにその上に厚さ１５０ｎｍ
のストライブ状ＡＩからなる背面電極６を形成しＥＬ素
子を完成した。この素子は交流電圧の印加により明るい
緑色発光を示した。PCI2 gas of I x 10-6 Torr was used as an atmospheric gas during vapor deposition. After film formation, heat treatment was performed at 600° C. for 1 hour in vacuum. A second insulating layer 5 made of Y2O3 with a thickness of 200 nm is formed on the phosphor film 4 by electron beam heating vacuum evaporation, and further thereon, a second insulating layer 5 with a thickness of 150 nm is formed.
A back electrode 6 made of striped AI was formed to complete an EL device. This device emitted bright green light when an alternating current voltage was applied.
第２図に本発明の製法で作成した素子と、０．５原子％
のＰとＴｂとを含む硫化亜鉛をターゲットとしてスパッ
タリングすることにより形成した硫化物蛍光体膜を用い
た素子との輝度−電圧特性の比較を示す。ａは本発明の
製法による特性であり、ｂの従来のスパッタリング法に
よる素子の特性と比較して、約１５０％の輝度の素子が
得られたことが判る。また、本発明の製法によれば、極
めて再現性よ（高輝度の素子を形成することができた。Figure 2 shows an element produced by the manufacturing method of the present invention and a 0.5 atomic%
A comparison of brightness-voltage characteristics with an element using a sulfide phosphor film formed by sputtering using zinc sulfide containing P and Tb as a target is shown. It can be seen that a shows the characteristics obtained by the manufacturing method of the present invention, and an element with about 150% brightness was obtained compared to the characteristics of the element b formed by the conventional sputtering method. Further, according to the manufacturing method of the present invention, it was possible to form an element with extremely high reproducibility (high luminance).
本実施例では、燐化合物からなるガスとして三塩化燐（
ＰＣＩｓ ）を用いたが、ホスフィン（ＰＨ３）、三フ
ッ化燐（ＰＦ３ ）、五フッ化燐（ＰＦｓ ）、五塩化
燐（ＰＣＩｓ ）、あるいは燐（Ｐ）を用いても同様の
効果を得ることができた。ただ、取り扱いやすさ、安全
性や製造装置の補修の面からは三塩化燐が最も優れてい
た。In this example, phosphorus trichloride (
Although we used phosphine (PH3), phosphorus trifluoride (PF3), phosphorus pentafluoride (PFs), phosphorus pentachloride (PCIs), or phosphorus (P), similar effects can be obtained. was completed. However, phosphorus trichloride was the best in terms of ease of handling, safety, and repair of manufacturing equipment.
蛍光体膜の母体結晶となる硫化物としては硫化亜鉛（Ｚ
ｎＳ）以外に、硫化カルシウム（ＣａＳ）、硫化ストロ
ンチウム（ＳｒＳ）、および硫化バリウム（ＢａＳ）の
うち１種以上を主成分とする材料を用いても本発明の効
果を発揮することができた。また希土類元素としては、
セリウム（Ｃｅ）、プラセオジミウム（Ｐｒ）、サマリ
ウム（Ｓｍ）、ユーロピウム（Ｅｕ）、ディスプロシウ
ム（Ｄｙ）、ホルミウム（ｔｌｏ）、エルビウム（Ｅｒ
〉、およびツリウム（Ｔｍ）のうち１種以上を、希土類
元素を含む化合物としては、フッ化物、塩化物、硫化物
、隣化物、あるいは酸化物のうち一種以上を用いても本
発明の効果を発揮することができた。たとえば、ＰＨ３
雰囲気中でＣａＳとＥｕＳを蒸発させることにより形成
したＣａＳ：Ｅｕ、Ｐ蛍光体薄膜は明るい赤色発光を示
した。Zinc sulfide (Z
The effects of the present invention could also be achieved using materials other than calcium sulfide (CaS), strontium sulfide (SrS), and barium sulfide (BaS). In addition, as rare earth elements,
Cerium (Ce), praseodymium (Pr), samarium (Sm), europium (Eu), dysprosium (Dy), holmium (tlo), erbium (Er)
The effects of the present invention can also be obtained by using one or more of the following: I was able to demonstrate. For example, PH3
A CaS:Eu,P phosphor thin film formed by evaporating CaS and EuS in an atmosphere exhibited bright red light emission.
希土類元素や硫化物を蒸発させる手段として、本実施例
ではるつぼによる抵抗加熱法を用いたが、他に電子ビー
ム加熱や誘導加熱を用いても同様の効果が得られた。In this example, a resistance heating method using a crucible was used as a means for evaporating rare earth elements and sulfides, but similar effects could also be obtained by using electron beam heating or induction heating.
硫化物薄膜を形成した後の熱処理は輝度の向上に有効で
あった。第３図は真空中３００〜８００℃の温度範囲で
１時間熱処理した時の輝度の変化を示す。熱処理温度範
囲としては５００℃以上が望ましいことがわかる。温度
の上限としては、基板ガラスの耐熱温度に依存し、高珪
酸ガラスでは約８００℃であった。熱処理雰囲気として
は真空、あるいは希ガスや窒素ガスなどの非酸化性ガス
を用いることができた。Heat treatment after forming the sulfide thin film was effective in improving brightness. FIG. 3 shows the change in brightness when heat treated in vacuum at a temperature range of 300 to 800° C. for 1 hour. It can be seen that the heat treatment temperature range is preferably 500°C or higher. The upper limit of the temperature depends on the heat resistance temperature of the substrate glass, and was about 800° C. for high silicate glass. As the heat treatment atmosphere, vacuum or non-oxidizing gas such as rare gas or nitrogen gas could be used.
発明の効果
本発明の製造方法によれば、ＥＬ素子用の蛍光体膜に適
した、発光輝度や効率の優れた硫化物蛍光体膜を再現性
良く製造することが可能であり実用的価値は高い。Effects of the Invention According to the manufacturing method of the present invention, it is possible to manufacture a sulfide phosphor film with excellent luminance and efficiency, which is suitable for a phosphor film for EL devices, with good reproducibility, and the practical value is expensive.
第１図は本発明の硫化物蛍光体膜の製造方法を説明する
ためのＥＬ素子構造を示す断面図、第２図は本発明の製
法で作成した素子（ａ）と、従来の製法による素子（ｂ
）との輝度−電圧特性の比較を示すグラフ、第３図はＥ
Ｌ発光輝度の蛍光体薄膜の熱処理温度依存性を示すグラ
フである。
１・・・・ガラス基板、２・・・・ＩＴＯ透明電極、３
・・・・第１絶縁体層、４・・・・硫化物蛍光体膜、５
・・・・第２絶縁体層、６・・・・背面電極。
代理人の氏名 弁理士 中尾敏男 ほか１名第１図
箔 ２ 図
印ＭＪｔ乃（Ｖ）FIG. 1 is a cross-sectional view showing the structure of an EL device for explaining the method of manufacturing a sulfide phosphor film of the present invention, and FIG. 2 shows a device (a) manufactured by the manufacturing method of the present invention and a device manufactured by the conventional manufacturing method. (b
), Figure 3 is a graph showing a comparison of the brightness-voltage characteristics with E
3 is a graph showing the dependence of L emission brightness on heat treatment temperature of a phosphor thin film. 1...Glass substrate, 2...ITO transparent electrode, 3
...First insulator layer, 4...Sulfide phosphor film, 5
. . . second insulator layer, 6. . . back electrode. Name of agent: Patent attorney Toshio Nakao and one other person Figure 1 Haku 2 Seal MJtno (V)
Claims (7)
希土類元素あるいは希土類元素を含む化合物および硫化
物を加熱蒸発させ、基板上に燐元素および希土類元素を
含む硫化物薄膜を堆積させることを特徴とする硫化物蛍
光体膜の製造方法。(1) In a gas atmosphere consisting of phosphorus or phosphorus compounds,
A method for producing a sulfide phosphor film, which comprises heating and evaporating a rare earth element or a compound containing the rare earth element and sulfide to deposit a sulfide thin film containing a phosphorus element and a rare earth element on a substrate.
燐、五フッ化燐、三塩化燐、および五塩化燐のうち１種
以上からなることを特徴とする特許請求の範囲第１項に
記載の硫化物蛍光体膜の製造方法。(2) Claim 1, characterized in that the gas consisting of a phosphorus compound consists of one or more of phosphine, phosphorus trifluoride, phosphorus pentafluoride, phosphorus trichloride, and phosphorus pentachloride. The method for producing the sulfide phosphor film described above.
ロンチウム、および硫化バリウムのうち１種以上を主成
分とすることを特徴とする特許請求の範囲第１項に記載
の硫化物蛍光体膜の製造方法。(3) The sulfide phosphor film according to claim 1, wherein the sulfide is mainly composed of one or more of zinc sulfide, calcium sulfide, strontium sulfide, and barium sulfide. Production method.
マリウム、ユーロピウム、テルビウム、ディスプロシウ
ム、ホルミウム、エルビウム、およびツリウムのうち１
種以上からなることを特徴とする特許請求の範囲第１項
に記載の硫化物蛍光体膜の製造方法。(4) The rare earth element is one of cerium, praseodymium, samarium, europium, terbium, dysprosium, holmium, erbium, and thulium.
2. The method for producing a sulfide phosphor film according to claim 1, wherein the sulfide phosphor film comprises at least one species.
硫化物、隣化物、あるいは酸化物のうち一種以上からな
ることを特徴とする特許請求の範囲第１項に記載の硫化
物蛍光体膜の製造方法。(5) Compounds containing rare earth elements include fluorides, chlorides,
2. The method for producing a sulfide phosphor film according to claim 1, wherein the sulfide phosphor film is made of one or more of sulfides, nephrides, and oxides.
ーム加熱、あるいは抵抗加熱であることを特徴とする特
許請求の範囲第１項に記載の硫化物蛍光体膜の製造方法
。(6) The method for producing a sulfide phosphor film according to claim 1, wherein the means for heating and evaporating is high frequency induction heating, electron beam heating, or resistance heating.
膜を堆積させた後、５００℃以上の温度で熱処理するこ
とを特徴とする特許請求の範囲第１項に記載の硫化物蛍
光体膜の製造方法。(7) A sulfide phosphor film according to claim 1, wherein a sulfide thin film containing phosphorous elements and rare earth elements is deposited on a substrate and then heat-treated at a temperature of 500°C or higher. manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62156820A JPS641789A (en) | 1987-06-24 | 1987-06-24 | Production of sulfide fluorescent material film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62156820A JPS641789A (en) | 1987-06-24 | 1987-06-24 | Production of sulfide fluorescent material film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH011789A true JPH011789A (en) | 1989-01-06 |
| JPS641789A JPS641789A (en) | 1989-01-06 |
Family
ID=15636058
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62156820A Pending JPS641789A (en) | 1987-06-24 | 1987-06-24 | Production of sulfide fluorescent material film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS641789A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003064357A (en) * | 2001-08-30 | 2003-03-05 | Futaba Corp | Fluorescent substance, method for producing fluorescent substance layer and fluorescent display tube |
| WO2005033360A1 (en) * | 2003-10-07 | 2005-04-14 | Ifire Technology Corp. | Polysulfide thermal vapour source for thin sulfide film deposition |
-
1987
- 1987-06-24 JP JP62156820A patent/JPS641789A/en active Pending
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