JPS6455888A - Semiconductor element - Google Patents
Semiconductor elementInfo
- Publication number
- JPS6455888A JPS6455888A JP21338987A JP21338987A JPS6455888A JP S6455888 A JPS6455888 A JP S6455888A JP 21338987 A JP21338987 A JP 21338987A JP 21338987 A JP21338987 A JP 21338987A JP S6455888 A JPS6455888 A JP S6455888A
- Authority
- JP
- Japan
- Prior art keywords
- layers
- quantum
- well
- type
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To obtain a p-n-p-n junction semiconductor element characterized by excellent controllability of impurity concentration and high light emitting efficiency, by forming confining layers with multiple-quantum-well structure, in which quantum well layers and barrier layers are alternately laminated, and doping only the quantum well layers in said multiple-quantum-well structure. CONSTITUTION:On an n-type GaAs substrate 1, an n-type Al0.6Ga0.4As layer 2 and a p-type Al0.3Ga0.7As layer 3 are formed. Then, quantum well layers comprising GaAs doped with Si as n-type impurities, and barrier layers comprising Al0.6Ga0.4As are laminated alternately by 150 periods. Thus multiple- quantum-well confining layers 4 are formed. Then, an n-type GaAs light emitting layer 5 doped with Si is as n-type impurities, is formed on the multiple-quantum- well confining layers 4. Thereafter, multiple-quantum-well confining layers 4 are formed again. A p-type Al0.6Ga0.4As layer 6 and a p-type GaAs cap layer 7 are sequentially formed on the layers 4 by a molecular beam epitaxy method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21338987A JPS6455888A (en) | 1987-08-26 | 1987-08-26 | Semiconductor element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21338987A JPS6455888A (en) | 1987-08-26 | 1987-08-26 | Semiconductor element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6455888A true JPS6455888A (en) | 1989-03-02 |
Family
ID=16638392
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21338987A Pending JPS6455888A (en) | 1987-08-26 | 1987-08-26 | Semiconductor element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6455888A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0526179U (en) * | 1991-09-10 | 1993-04-06 | オルガノ株式会社 | Purifier for water containing organic solvent |
US5528614A (en) * | 1993-05-19 | 1996-06-18 | Mitsubishi Denki Kabushiki Kaisha | Quantum well semiconductor laser device structure |
-
1987
- 1987-08-26 JP JP21338987A patent/JPS6455888A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0526179U (en) * | 1991-09-10 | 1993-04-06 | オルガノ株式会社 | Purifier for water containing organic solvent |
US5528614A (en) * | 1993-05-19 | 1996-06-18 | Mitsubishi Denki Kabushiki Kaisha | Quantum well semiconductor laser device structure |
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