JPS6455888A - Semiconductor element - Google Patents

Semiconductor element

Info

Publication number
JPS6455888A
JPS6455888A JP21338987A JP21338987A JPS6455888A JP S6455888 A JPS6455888 A JP S6455888A JP 21338987 A JP21338987 A JP 21338987A JP 21338987 A JP21338987 A JP 21338987A JP S6455888 A JPS6455888 A JP S6455888A
Authority
JP
Japan
Prior art keywords
layers
quantum
well
type
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21338987A
Other languages
Japanese (ja)
Inventor
Noboru Hamao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP21338987A priority Critical patent/JPS6455888A/en
Publication of JPS6455888A publication Critical patent/JPS6455888A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To obtain a p-n-p-n junction semiconductor element characterized by excellent controllability of impurity concentration and high light emitting efficiency, by forming confining layers with multiple-quantum-well structure, in which quantum well layers and barrier layers are alternately laminated, and doping only the quantum well layers in said multiple-quantum-well structure. CONSTITUTION:On an n-type GaAs substrate 1, an n-type Al0.6Ga0.4As layer 2 and a p-type Al0.3Ga0.7As layer 3 are formed. Then, quantum well layers comprising GaAs doped with Si as n-type impurities, and barrier layers comprising Al0.6Ga0.4As are laminated alternately by 150 periods. Thus multiple- quantum-well confining layers 4 are formed. Then, an n-type GaAs light emitting layer 5 doped with Si is as n-type impurities, is formed on the multiple-quantum- well confining layers 4. Thereafter, multiple-quantum-well confining layers 4 are formed again. A p-type Al0.6Ga0.4As layer 6 and a p-type GaAs cap layer 7 are sequentially formed on the layers 4 by a molecular beam epitaxy method.
JP21338987A 1987-08-26 1987-08-26 Semiconductor element Pending JPS6455888A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21338987A JPS6455888A (en) 1987-08-26 1987-08-26 Semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21338987A JPS6455888A (en) 1987-08-26 1987-08-26 Semiconductor element

Publications (1)

Publication Number Publication Date
JPS6455888A true JPS6455888A (en) 1989-03-02

Family

ID=16638392

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21338987A Pending JPS6455888A (en) 1987-08-26 1987-08-26 Semiconductor element

Country Status (1)

Country Link
JP (1) JPS6455888A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0526179U (en) * 1991-09-10 1993-04-06 オルガノ株式会社 Purifier for water containing organic solvent
US5528614A (en) * 1993-05-19 1996-06-18 Mitsubishi Denki Kabushiki Kaisha Quantum well semiconductor laser device structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0526179U (en) * 1991-09-10 1993-04-06 オルガノ株式会社 Purifier for water containing organic solvent
US5528614A (en) * 1993-05-19 1996-06-18 Mitsubishi Denki Kabushiki Kaisha Quantum well semiconductor laser device structure

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