JPS645456B2 - - Google Patents

Info

Publication number
JPS645456B2
JPS645456B2 JP57185003A JP18500382A JPS645456B2 JP S645456 B2 JPS645456 B2 JP S645456B2 JP 57185003 A JP57185003 A JP 57185003A JP 18500382 A JP18500382 A JP 18500382A JP S645456 B2 JPS645456 B2 JP S645456B2
Authority
JP
Japan
Prior art keywords
silicon dioxide
film
semiconductor device
groove
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57185003A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5972769A (ja
Inventor
Toshihiro Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP57185003A priority Critical patent/JPS5972769A/ja
Publication of JPS5972769A publication Critical patent/JPS5972769A/ja
Publication of JPS645456B2 publication Critical patent/JPS645456B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats

Landscapes

  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
  • Weting (AREA)
JP57185003A 1982-10-19 1982-10-19 半導体装置の製造方法 Granted JPS5972769A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57185003A JPS5972769A (ja) 1982-10-19 1982-10-19 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57185003A JPS5972769A (ja) 1982-10-19 1982-10-19 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5972769A JPS5972769A (ja) 1984-04-24
JPS645456B2 true JPS645456B2 (enrdf_load_stackoverflow) 1989-01-30

Family

ID=16163072

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57185003A Granted JPS5972769A (ja) 1982-10-19 1982-10-19 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5972769A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61274362A (ja) * 1985-05-29 1986-12-04 Fuji Electric Co Ltd ゲ−トタ−ンオフサイリスタの製造方法

Also Published As

Publication number Publication date
JPS5972769A (ja) 1984-04-24

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