JPS6453464A - Nonvolatile memory - Google Patents

Nonvolatile memory

Info

Publication number
JPS6453464A
JPS6453464A JP63182854A JP18285488A JPS6453464A JP S6453464 A JPS6453464 A JP S6453464A JP 63182854 A JP63182854 A JP 63182854A JP 18285488 A JP18285488 A JP 18285488A JP S6453464 A JPS6453464 A JP S6453464A
Authority
JP
Japan
Prior art keywords
offset region
offset
electric field
region
diffusion layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63182854A
Other languages
Japanese (ja)
Inventor
Shinji Morozumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP63182854A priority Critical patent/JPS6453464A/en
Publication of JPS6453464A publication Critical patent/JPS6453464A/en
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To realize a memory large in capacity, operational at high speed, simplified in a manufacturing process, and high in yield by a method wherein a transistor provided to an offset region is utilized as a nonvolatile memory. CONSTITUTION:A source diffusion layer N<+>2 and a drain diffusion layer N<+>3 are formed on a P<-> silicon substrate 1, then a silicon oxide film 5 and a silicon nitride film 6 are built, a gate electrode 9 is formed, and thereafter an offset region 4 comparatively low in concentration is formed on an offset section through an ion-implantation method. And, the electric field is made to be concentrated onto the offset region 4, carriers accelerated by the strong electric field are trapped by a trapping level in the upper part of the offset region 4 or a storage region such as a floating electrode or the like equivalent to the trapping level so as to find a transistor to be '0' or '1'.
JP63182854A 1988-07-22 1988-07-22 Nonvolatile memory Pending JPS6453464A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63182854A JPS6453464A (en) 1988-07-22 1988-07-22 Nonvolatile memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63182854A JPS6453464A (en) 1988-07-22 1988-07-22 Nonvolatile memory

Publications (1)

Publication Number Publication Date
JPS6453464A true JPS6453464A (en) 1989-03-01

Family

ID=16125617

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63182854A Pending JPS6453464A (en) 1988-07-22 1988-07-22 Nonvolatile memory

Country Status (1)

Country Link
JP (1) JPS6453464A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS509388A (en) * 1973-05-22 1975-01-30
JPS5125985A (en) * 1974-08-28 1976-03-03 Tokyo Shibaura Electric Co

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS509388A (en) * 1973-05-22 1975-01-30
JPS5125985A (en) * 1974-08-28 1976-03-03 Tokyo Shibaura Electric Co

Similar Documents

Publication Publication Date Title
JPS55113359A (en) Semiconductor integrated circuit device
JPS6421967A (en) Semiconductor device and manufacture thereof
EP0052989A3 (en) Method of fabricating a semiconductor device
JPS5696854A (en) Semiconductor memory device
JPS6453574A (en) Semiconductor device
JPS5690556A (en) Semiconductor memory storage
JPS5710268A (en) Semiconductor device
JPS6453464A (en) Nonvolatile memory
JPS5633881A (en) Manufacture of semiconductor device
JPS54156483A (en) Non-volatile semiconductor memory device
JPS5587481A (en) Mis type semiconductor device
JPS6433970A (en) Field effect semiconductor device
JPS54102982A (en) Charge transfer type semiconductor device
JPS6473770A (en) Semiconductor device and manufacture thereof
JPS54114984A (en) Semiconductor device
JPS5567161A (en) Semiconductor memory storage
JPS5717174A (en) Semiconductor device
JPS55107229A (en) Method of manufacturing semiconductor device
JPS5772379A (en) Manufacture of semiconductor devuce
JPS5499578A (en) Field effect transistor
JPS57164573A (en) Semiconductor device
JPS6450465A (en) Semiconductor device
JPS56133866A (en) Manufacture of semiconductor memory
JPS5687370A (en) Semiconductor memory storage
JPS5797674A (en) Manufacture of mos semiconductor device