JPS509388A - - Google Patents
Info
- Publication number
- JPS509388A JPS509388A JP5741573A JP5741573A JPS509388A JP S509388 A JPS509388 A JP S509388A JP 5741573 A JP5741573 A JP 5741573A JP 5741573 A JP5741573 A JP 5741573A JP S509388 A JPS509388 A JP S509388A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Bipolar Transistors (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5741573A JPS5435470B2 (en) | 1973-05-22 | 1973-05-22 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5741573A JPS5435470B2 (en) | 1973-05-22 | 1973-05-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS509388A true JPS509388A (en) | 1975-01-30 |
| JPS5435470B2 JPS5435470B2 (en) | 1979-11-02 |
Family
ID=13055006
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5741573A Expired JPS5435470B2 (en) | 1973-05-22 | 1973-05-22 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5435470B2 (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5023989A (en) * | 1973-07-02 | 1975-03-14 | ||
| JPS5339061A (en) * | 1976-09-22 | 1978-04-10 | Nec Corp | Production of semiconductor device |
| JPS5565460A (en) * | 1978-11-09 | 1980-05-16 | Ibm | Method of manufacturing semiconductor device improved in current gain |
| JPS56140665A (en) * | 1980-04-03 | 1981-11-04 | Seiko Epson Corp | Nonvolatile memory |
| JPS56142674A (en) * | 1980-04-09 | 1981-11-07 | Fujitsu Ltd | Semiconductor memory device |
| JPS60177677A (en) * | 1984-02-23 | 1985-09-11 | Seiko Epson Corp | Semiconductor device |
| JPS63314869A (en) * | 1987-04-24 | 1988-12-22 | パワー インテグレーションズ，インコーポレーテッド | High voltage mos transistor |
| JPS6453464A (en) * | 1988-07-22 | 1989-03-01 | Seiko Epson Corp | Nonvolatile memory |
-
1973
- 1973-05-22 JP JP5741573A patent/JPS5435470B2/ja not_active Expired
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5636585B2 (en) * | 1973-07-02 | 1981-08-25 | ||
| JPS5023989A (en) * | 1973-07-02 | 1975-03-14 | ||
| JPS6035818B2 (en) * | 1976-09-22 | 1985-08-16 | 日本電気株式会社 | Manufacturing method of semiconductor device |
| JPS5339061A (en) * | 1976-09-22 | 1978-04-10 | Nec Corp | Production of semiconductor device |
| JPS5565460A (en) * | 1978-11-09 | 1980-05-16 | Ibm | Method of manufacturing semiconductor device improved in current gain |
| JPS56140665A (en) * | 1980-04-03 | 1981-11-04 | Seiko Epson Corp | Nonvolatile memory |
| JPH0147906B2 (en) * | 1980-04-03 | 1989-10-17 | Seiko Epson Corp | |
| JPS56142674A (en) * | 1980-04-09 | 1981-11-07 | Fujitsu Ltd | Semiconductor memory device |
| JPS60177677A (en) * | 1984-02-23 | 1985-09-11 | Seiko Epson Corp | Semiconductor device |
| JPS63314869A (en) * | 1987-04-24 | 1988-12-22 | パワー インテグレーションズ，インコーポレーテッド | High voltage mos transistor |
| JPH08172184A (en) * | 1987-04-24 | 1996-07-02 | Power Integrations Inc | High-voltage mos transistor |
| JP2804460B2 (en) * | 1987-04-24 | 1998-09-24 | パワー インテグレーションズ，インコーポレーテッド | High voltage MOS transistor |
| JPS6453464A (en) * | 1988-07-22 | 1989-03-01 | Seiko Epson Corp | Nonvolatile memory |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5435470B2 (en) | 1979-11-02 |