JPS6449291A - Array-type semiconductor laser device - Google Patents

Array-type semiconductor laser device

Info

Publication number
JPS6449291A
JPS6449291A JP62206109A JP20610987A JPS6449291A JP S6449291 A JPS6449291 A JP S6449291A JP 62206109 A JP62206109 A JP 62206109A JP 20610987 A JP20610987 A JP 20610987A JP S6449291 A JPS6449291 A JP S6449291A
Authority
JP
Japan
Prior art keywords
array
laser
face
detector
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62206109A
Other languages
Japanese (ja)
Other versions
JPH0654824B2 (en
Inventor
Yutaka Yamanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62206109A priority Critical patent/JPH0654824B2/en
Publication of JPS6449291A publication Critical patent/JPS6449291A/en
Publication of JPH0654824B2 publication Critical patent/JPH0654824B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Lasers (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To execute a monitoring operation without affecting a laser characteristic by a method wherein an array-type detector whose photodetecting face is faced with the upper face of a heat-sink substrate is installed in the vicinity of the end of one side of an array-type semiconductor laser. CONSTITUTION:An array-type semiconductor laser 2 and an array-type detector 3 via a spacer 4 are installed on a heat-sink substrate 1. The detector 3 is installed in such a way that its photodetecting face 6 is faced downward and that a gap is secured between the face and the substrate 1. One part of a beam radiated from the end of the laser 2 is absorbed by the photodetecting face 6; its remaining part is reflected by the lower face of the detector 3 situated above the substrate 1 ; accordingly, a laser output does not become unstable. In addition, because a laser electrode 5 is installed under the photodetecting face of the detector 3, a sufficient width can be secured. Accordingly, the laser output can be monitored without affecting a laser characteristic and independently.
JP62206109A 1987-08-19 1987-08-19 Array type semiconductor laser device Expired - Lifetime JPH0654824B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62206109A JPH0654824B2 (en) 1987-08-19 1987-08-19 Array type semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62206109A JPH0654824B2 (en) 1987-08-19 1987-08-19 Array type semiconductor laser device

Publications (2)

Publication Number Publication Date
JPS6449291A true JPS6449291A (en) 1989-02-23
JPH0654824B2 JPH0654824B2 (en) 1994-07-20

Family

ID=16517950

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62206109A Expired - Lifetime JPH0654824B2 (en) 1987-08-19 1987-08-19 Array type semiconductor laser device

Country Status (1)

Country Link
JP (1) JPH0654824B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0801448A2 (en) * 1996-04-12 1997-10-15 Sick Ag Laser device for generating a master lightray and a reference lightray
JP2012094765A (en) * 2010-10-28 2012-05-17 Sanyo Electric Co Ltd Semiconductor laser device and optical device
JP2013258434A (en) * 2013-10-01 2013-12-26 Japan Oclaro Inc Multi-beam semiconductor laser device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0801448A2 (en) * 1996-04-12 1997-10-15 Sick Ag Laser device for generating a master lightray and a reference lightray
EP0801448A3 (en) * 1996-04-12 1999-03-10 Sick Ag Laser device for generating a master lightray and a reference lightray
JP2012094765A (en) * 2010-10-28 2012-05-17 Sanyo Electric Co Ltd Semiconductor laser device and optical device
JP2013258434A (en) * 2013-10-01 2013-12-26 Japan Oclaro Inc Multi-beam semiconductor laser device

Also Published As

Publication number Publication date
JPH0654824B2 (en) 1994-07-20

Similar Documents

Publication Publication Date Title
JPS6449291A (en) Array-type semiconductor laser device
CA2038334A1 (en) Apparatus and method for detecting the power level in single and multi-stripe integrated lasers
GB1088703A (en) Junction laser structure
CA2106596A1 (en) Semiconductor laser device
YUTAKA Array-type semiconductor laser device
JPS5366192A (en) Oscillation wavelength stabilization method of semiconductor laser
JPS57177587A (en) Laser diode
JPS5687380A (en) Semiconductor device for detection of radiant light
JPS57192093A (en) Semiconductor laser device
JPS6484770A (en) Semiconductor laser device
JPS6461964A (en) Semiconductor device
JPS6395690A (en) Surface emission type semiconductor laser
JPS5745927A (en) Vacuum leakage detector for dry etching vacuum container
JPS5376692A (en) Semiconductor light emitting device
JPS57199286A (en) Semiconductor laser device
JPS57132387A (en) Semiconductor laser device
JPS6461082A (en) Semiconductor laser element
JPS57170583A (en) Semiconductor laser device
Burrell et al. Transverse Gain in GaAs Laser Structures
JPS5335485A (en) Semiconductor laser unit
JPS6449295A (en) Semiconductor laser device
JPS5348493A (en) Semiconductor laser device and its production
JPS5779685A (en) Light emitting diode device
JPS57106183A (en) Semiconductor light emitting device
JPS6453486A (en) Semiconductor laser device