JPS6447038A - Junction structure - Google Patents
Junction structureInfo
- Publication number
- JPS6447038A JPS6447038A JP62203553A JP20355387A JPS6447038A JP S6447038 A JPS6447038 A JP S6447038A JP 62203553 A JP62203553 A JP 62203553A JP 20355387 A JP20355387 A JP 20355387A JP S6447038 A JPS6447038 A JP S6447038A
- Authority
- JP
- Japan
- Prior art keywords
- lead
- electrode terminal
- junctioning
- alloy
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
Landscapes
- Wire Bonding (AREA)
Abstract
PURPOSE:To realize a reliable bondage at low temperature and under low pressure by a method wherein a junction, consisting of a lead attached to an insulating film and an electrode terminal of an electronic part, is bonded to the electrode terminal and an insulating body in its vicinity. CONSTITUTION:The surface of a lead 14 built of a film carrier junctioning alloy is subjected to etching in diluted hydrochloric acid, washing, and natural dry out. An electrode terminal 31 of an integrated circuit element 30 is aligned with the end of the lead 14. The lead 14, the electrode terminal 31, and a passivation film 32 in their vicinity are subjected to thermal contact bonding. In a connecting process, a heater is allowed to rise to 150 deg.C where it is switched off, but pressure is kept on until the temperature is as low as 134 deg.C that is the melting point of the junctioning alloy, after which a bonding tool 40 is removed. A film carrier inner lead is heated for the simultaneous accomplishment of plastic deformation of the junctioning alloy and the thermal contact bonding of the lead 14, the electrode terminal 31, and the passivation film 32 protecting their neighborhood.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62203553A JPS6447038A (en) | 1987-08-18 | 1987-08-18 | Junction structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62203553A JPS6447038A (en) | 1987-08-18 | 1987-08-18 | Junction structure |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6447038A true JPS6447038A (en) | 1989-02-21 |
Family
ID=16476043
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62203553A Pending JPS6447038A (en) | 1987-08-18 | 1987-08-18 | Junction structure |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6447038A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5518957A (en) * | 1991-10-10 | 1996-05-21 | Samsung Electronics Co., Ltd. | Method for making a thin profile semiconductor package |
US5686352A (en) * | 1993-07-26 | 1997-11-11 | Motorola Inc. | Method for making a tab semiconductor device with self-aligning cavity and intrinsic standoff |
US5849607A (en) * | 1993-11-27 | 1998-12-15 | Samsung Electronics Co., Ltd. | Process for attaching a lead frame to a semiconductor chip |
-
1987
- 1987-08-18 JP JP62203553A patent/JPS6447038A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5518957A (en) * | 1991-10-10 | 1996-05-21 | Samsung Electronics Co., Ltd. | Method for making a thin profile semiconductor package |
US5686352A (en) * | 1993-07-26 | 1997-11-11 | Motorola Inc. | Method for making a tab semiconductor device with self-aligning cavity and intrinsic standoff |
US5849607A (en) * | 1993-11-27 | 1998-12-15 | Samsung Electronics Co., Ltd. | Process for attaching a lead frame to a semiconductor chip |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS6447038A (en) | Junction structure | |
JPS57178149A (en) | Manufacture of electric heater | |
JPS5483374A (en) | Chip bonding process | |
JPS574130A (en) | Adhesion of semiconductor element | |
JPS55134325A (en) | Temperature sensor | |
JPS54133877A (en) | Semiconductor device | |
JPS5521175A (en) | Semiconductor device | |
JPS6469021A (en) | Jig for removing gold wire of semiconductor circuit device | |
JPS5588346A (en) | Packaging method for semiconductor element | |
KR19990075618A (en) | Heater Block for Wire Bonding Process | |
JP3063587B2 (en) | Electronic component and method of manufacturing electronic component | |
JPS5574148A (en) | Production of semiconductor device | |
JPS6447039A (en) | Wire-bonding | |
JP2524364B2 (en) | Wire bonding equipment | |
TWI261396B (en) | Solder ball positioning method for terminal of electrical connector | |
JPS6437039A (en) | Semiconductor device | |
JPS56111234A (en) | Semiconductor integrated circuit device and manufacture thereof | |
SU1283881A1 (en) | Method of manufacturing waveguide units | |
JPH10112491A (en) | Method of picking up chip body | |
JPS54119876A (en) | Manufacture for semiconductor device | |
JPS55128848A (en) | Semiconductor device | |
JPS57130436A (en) | Sealing method of semiconductor device with resin | |
JPS5669839A (en) | Semiconductor device and manufacture thereof | |
JPS6473754A (en) | Manufacture of lead frame for semiconductor device | |
JPS5515265A (en) | Collet for assembling semiconductor device |