JPS6447029U - - Google Patents

Info

Publication number
JPS6447029U
JPS6447029U JP14220387U JP14220387U JPS6447029U JP S6447029 U JPS6447029 U JP S6447029U JP 14220387 U JP14220387 U JP 14220387U JP 14220387 U JP14220387 U JP 14220387U JP S6447029 U JPS6447029 U JP S6447029U
Authority
JP
Japan
Prior art keywords
reaction tube
vapor phase
phase growth
growth apparatus
outer periphery
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14220387U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP14220387U priority Critical patent/JPS6447029U/ja
Publication of JPS6447029U publication Critical patent/JPS6447029U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP14220387U 1987-09-17 1987-09-17 Pending JPS6447029U (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14220387U JPS6447029U (zh) 1987-09-17 1987-09-17

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14220387U JPS6447029U (zh) 1987-09-17 1987-09-17

Publications (1)

Publication Number Publication Date
JPS6447029U true JPS6447029U (zh) 1989-03-23

Family

ID=31407951

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14220387U Pending JPS6447029U (zh) 1987-09-17 1987-09-17

Country Status (1)

Country Link
JP (1) JPS6447029U (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001152344A (ja) * 1999-11-29 2001-06-05 Fujitsu Ltd 化学蒸着装置
JP2002506570A (ja) * 1997-06-25 2002-02-26 ラム・リサーチ・コーポレーション 基板をパッシベートするためのプラズマ反応炉
US7632093B2 (en) 2004-09-06 2009-12-15 Samsung Electronics Co., Ltd. Pyrolysis furnace having gas flowing path controller

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002506570A (ja) * 1997-06-25 2002-02-26 ラム・リサーチ・コーポレーション 基板をパッシベートするためのプラズマ反応炉
JP2001152344A (ja) * 1999-11-29 2001-06-05 Fujitsu Ltd 化学蒸着装置
US7632093B2 (en) 2004-09-06 2009-12-15 Samsung Electronics Co., Ltd. Pyrolysis furnace having gas flowing path controller

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