JPS6446969A - Photodetector - Google Patents
PhotodetectorInfo
- Publication number
- JPS6446969A JPS6446969A JP62203334A JP20333487A JPS6446969A JP S6446969 A JPS6446969 A JP S6446969A JP 62203334 A JP62203334 A JP 62203334A JP 20333487 A JP20333487 A JP 20333487A JP S6446969 A JPS6446969 A JP S6446969A
- Authority
- JP
- Japan
- Prior art keywords
- isolation
- photodetector
- substrate
- circuit part
- islands
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To make the mutual insulation between elements formed on a dielectric isolation substrate perfect, and making the elements suitable to detect light in a long wavelength region like infrared rays, by forming an element constituting a circuit part linked to a photodetector part on the surface of at least one isolation island, and connecting said circuit part and the photodetector part on the substrate surface. CONSTITUTION:In isolation islands 11, 12 on a dielectric isolation substrate 1 having a plurality of isolation islands 11, 12 insulating-layer-isolated, a photodetector part PD1 is arranged, which is constituted of a P-N junction in a manner in which layers 11b, 12b with different polarity to the isolation islands are arranged so as to reach the surface from the bottom surface passing through the side surface along the insulating layer 1b. On the surface of at least one isolation island 12, an element T1 constituting a circuit part linked to the photodetector part PD1 is formed. This circuit part and the photodetector part PD1 are connected on the substrate surface. Thereby, the insulation between elements formed on the dielectric isolation substrate 1 is made perfect. Further, the photodetector element part PD1 is formed on the bottom part of the isolation island 11, and is made suitable to detect light in a long wavelength region such as infrared rays.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62203334A JPS6446969A (en) | 1987-08-15 | 1987-08-15 | Photodetector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62203334A JPS6446969A (en) | 1987-08-15 | 1987-08-15 | Photodetector |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6446969A true JPS6446969A (en) | 1989-02-21 |
Family
ID=16472293
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62203334A Pending JPS6446969A (en) | 1987-08-15 | 1987-08-15 | Photodetector |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6446969A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07183566A (en) * | 1993-11-17 | 1995-07-21 | At & T Corp | Optical diode and its manufacture |
JP2017126738A (en) * | 2016-01-13 | 2017-07-20 | ソニー株式会社 | Light receiving device, method of manufacturing the same, imaging device, and electronic device |
-
1987
- 1987-08-15 JP JP62203334A patent/JPS6446969A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07183566A (en) * | 1993-11-17 | 1995-07-21 | At & T Corp | Optical diode and its manufacture |
JP2017126738A (en) * | 2016-01-13 | 2017-07-20 | ソニー株式会社 | Light receiving device, method of manufacturing the same, imaging device, and electronic device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE68923894D1 (en) | Semiconductor substrate with dielectric insulation. | |
DE68908196D1 (en) | FUEL ELEMENT WITH OXIDATION-RESISTANT LAYER. | |
DE68905265D1 (en) | GLASS CERAMIC SUBSTRATE WITH AN ELECTRICALLY CONDUCTIVE LAYER. | |
EP0307484A4 (en) | Color sensor. | |
JPS6472557A (en) | Image sensor | |
DE69024578D1 (en) | Integrated circuit structure with a composite borophosphosilicate glass layer on a semiconductor wafer and improved production method therefor | |
DE3856439T2 (en) | Semiconductor arrangement with a composite insulating intermediate layer | |
JPS6446969A (en) | Photodetector | |
JPS561318A (en) | Photoelectric conversion device | |
JPS5567158A (en) | Inductor device of hybrid integrated circuit | |
JPS54158121A (en) | Solid state image pickup device | |
JPS5258491A (en) | Semiconductor device | |
JPS5642386A (en) | Semiconductor photodetector | |
KR890001206A (en) | Photo sensor | |
JPS54146681A (en) | Photo-detector | |
JPS5727047A (en) | Semiconductor device | |
JPS647681A (en) | Distributed reflex semiconductor laser | |
JPS5357978A (en) | Production of dielectric insulated and isolated substrate | |
JPS6442169A (en) | Solid-state image sensor | |
JPS5565454A (en) | Semiconductor device | |
MY103799A (en) | Substrate potential detecting circuit | |
JPS56165369A (en) | Semiconductor photoelectric converting element | |
JPS56165367A (en) | Semiconductor photoelectric convertor | |
JPS56165368A (en) | Semiconductor color decomposing and detecting element | |
JPS6455506A (en) | Optical circuit |