JPS6442169A - Solid-state image sensor - Google Patents

Solid-state image sensor

Info

Publication number
JPS6442169A
JPS6442169A JP62198578A JP19857887A JPS6442169A JP S6442169 A JPS6442169 A JP S6442169A JP 62198578 A JP62198578 A JP 62198578A JP 19857887 A JP19857887 A JP 19857887A JP S6442169 A JPS6442169 A JP S6442169A
Authority
JP
Japan
Prior art keywords
reflecting
optical detector
transparent film
infrared optical
grid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62198578A
Other languages
Japanese (ja)
Inventor
Naoki Yuya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62198578A priority Critical patent/JPS6442169A/en
Publication of JPS6442169A publication Critical patent/JPS6442169A/en
Pending legal-status Critical Current

Links

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE:To assure with ease a desired and controllable spectral characteristics by providing a reflecting/transparent film on optical detector means, the film being capable of selection of any wavelength. CONSTITUTION:A reflecting/transparent film 17 is formed on a Schottky junction part being a photoelectric transducer in opposition to the latter. The Schottky junction part is formed of a p-type substrate 6 and a metal side electrode 7 via an interlayer insulating film 14 of a predetermined depth being an insulating layer. And, infrared optical detector parts 16 each having the reflecting/ transparent film 17 are arranged adjoining to a transfer gate in parallel to each other. The infrared optical detector part 16 includes small inter-grid distance infrared optical detector parts 16a located on odd-numbered rows and large inter-grid distance infrared optical detector parts 16b on even-numbered rows, both being alternately arranged. That is, the reflecting/transparent film 17 serves as a reflecting filter which reflects long wavelength region components of the infrared ray and transmits short wavelength region components of the same where wavelength components are determined to be reflectable or transmittable depending upon a grid dimension. Thus, a desired long wavelength component can selectively be reflected and derived by selecting a predetermined grid size.
JP62198578A 1987-08-07 1987-08-07 Solid-state image sensor Pending JPS6442169A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62198578A JPS6442169A (en) 1987-08-07 1987-08-07 Solid-state image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62198578A JPS6442169A (en) 1987-08-07 1987-08-07 Solid-state image sensor

Publications (1)

Publication Number Publication Date
JPS6442169A true JPS6442169A (en) 1989-02-14

Family

ID=16393505

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62198578A Pending JPS6442169A (en) 1987-08-07 1987-08-07 Solid-state image sensor

Country Status (1)

Country Link
JP (1) JPS6442169A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011022291A (en) * 2009-07-15 2011-02-03 Kayoko Okamoto Display hanging tool
US8053853B2 (en) 2006-05-03 2011-11-08 Taiwan Semiconductor Manufacturing Company, Ltd. Color filter-embedded MSM image sensor
US8054371B2 (en) 2007-02-19 2011-11-08 Taiwan Semiconductor Manufacturing Company, Ltd. Color filter for image sensor
US9000492B2 (en) 2009-03-27 2015-04-07 Hamamatsu Photonics K.K. Back-illuminated solid-state image pickup device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8053853B2 (en) 2006-05-03 2011-11-08 Taiwan Semiconductor Manufacturing Company, Ltd. Color filter-embedded MSM image sensor
US8054371B2 (en) 2007-02-19 2011-11-08 Taiwan Semiconductor Manufacturing Company, Ltd. Color filter for image sensor
US9000492B2 (en) 2009-03-27 2015-04-07 Hamamatsu Photonics K.K. Back-illuminated solid-state image pickup device
JP2011022291A (en) * 2009-07-15 2011-02-03 Kayoko Okamoto Display hanging tool

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