JPS6445129A - Plasma processor - Google Patents

Plasma processor

Info

Publication number
JPS6445129A
JPS6445129A JP20239987A JP20239987A JPS6445129A JP S6445129 A JPS6445129 A JP S6445129A JP 20239987 A JP20239987 A JP 20239987A JP 20239987 A JP20239987 A JP 20239987A JP S6445129 A JPS6445129 A JP S6445129A
Authority
JP
Japan
Prior art keywords
window
peeping
electrons
ions
gas plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20239987A
Other languages
Japanese (ja)
Inventor
Takehiro Kawasaki
Takahiro Anada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokuda Seisakusho Co Ltd
Original Assignee
Tokuda Seisakusho Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokuda Seisakusho Co Ltd filed Critical Tokuda Seisakusho Co Ltd
Priority to JP20239987A priority Critical patent/JPS6445129A/en
Publication of JPS6445129A publication Critical patent/JPS6445129A/en
Pending legal-status Critical Current

Links

Landscapes

  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To make it possible to remove a material, which is attached on the inner surface of a window, by yielding gas plasma in a chamber, providing a potential at the inner surface of the window, and projecting ions or electrons on the inner surface of the window. CONSTITUTION:A peeping window 9 made of glass, in which a metal net as an electrode 8 is provided, is formed in the inside of a peeping window hole 6 of a chamber 1. When high frequency electric power is applied to the metal net 8 from a high frequency power source 12, a potential difference is imparted between the metal net 8 in the inside of the peeping window 9 and gas plasma. Ions or electrons in the gas plasma can be projected on the inner surface of the peeping window 9. Thus, a grown film, which is deposited on the inner surface of the peeping window 9, can be positively removed by the projection of the ions or the electrons.
JP20239987A 1987-08-13 1987-08-13 Plasma processor Pending JPS6445129A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20239987A JPS6445129A (en) 1987-08-13 1987-08-13 Plasma processor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20239987A JPS6445129A (en) 1987-08-13 1987-08-13 Plasma processor

Publications (1)

Publication Number Publication Date
JPS6445129A true JPS6445129A (en) 1989-02-17

Family

ID=16456855

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20239987A Pending JPS6445129A (en) 1987-08-13 1987-08-13 Plasma processor

Country Status (1)

Country Link
JP (1) JPS6445129A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100375988B1 (en) * 2001-02-05 2003-03-15 삼성전자주식회사 semiconductor device manufacturing equipment and method for detecting position of semiconductor wafer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100375988B1 (en) * 2001-02-05 2003-03-15 삼성전자주식회사 semiconductor device manufacturing equipment and method for detecting position of semiconductor wafer

Similar Documents

Publication Publication Date Title
FR2412619B1 (en)
EP0169744A3 (en) Ion source
MY113565A (en) Method for modifying the chemistry of an article surface
JPS56152973A (en) Sputter etching device
JPS57131374A (en) Plasma etching device
JPS5435172A (en) Chemical reactor using electric discharge
JPS575418A (en) Cavity type surface elastic wave resonator
GB2030180B (en) Vapour deposition of metal in plasma discharge
JPS6445129A (en) Plasma processor
JPS53136374A (en) Low pressure vapor discharge lamp
DE3269440D1 (en) Ion source having a gas ionization chamber with oscillations of electrons
JPS57131373A (en) Plasma etching device
JPS5615044A (en) Plasma cleaning method
JPS5760073A (en) Plasma etching method
JPS5426657A (en) Cathode ray tube
JPS53114679A (en) Plasm etching unit
JPS5373095A (en) Metallic vapor laser tube
JPS5269262A (en) Plasma display panel
JPS53132396A (en) Solid ion source
JPS5612541A (en) Removing device of contaminant
JPS56148833A (en) Plasma etching method
JPS57152471A (en) Etching device using high frequency sputtering
JPS5488178A (en) Gas flow counter
JPS5350969A (en) Manufacture of plasma display panel
JPS6490522A (en) Plasma cvd system