JPS6444055A - Protective circuit - Google Patents

Protective circuit

Info

Publication number
JPS6444055A
JPS6444055A JP62201455A JP20145587A JPS6444055A JP S6444055 A JPS6444055 A JP S6444055A JP 62201455 A JP62201455 A JP 62201455A JP 20145587 A JP20145587 A JP 20145587A JP S6444055 A JPS6444055 A JP S6444055A
Authority
JP
Japan
Prior art keywords
bio
protective circuit
chip
polyacetylene
doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62201455A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP62201455A priority Critical patent/JPS6444055A/en
Publication of JPS6444055A publication Critical patent/JPS6444055A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To obtain an electrostatic protective circuit for performing a bio-chip by employing as the protective circuit in the bio-chip means for wiring a polymer element in series, parallel or in series-parallel with a ground wiring at input/output terminals. CONSTITUTION:Wirings or resistors made of polyacetylene are formed on an insulating substrate 1, a junction diode of a halogen-doped polyacetylene or acceptor-doped polyacetylene 2 and an alkaline metal-doped doner-doped polyacetylene 3 is formed, and a high voltage input from an input terminal IN4 can be escaped to a GND 5. A high voltage input from an input terminal IN14 can be rapidly escaped to a GND 15 in an FET having an acceptor-doped polyacetylene 12, a doner-doped polyacetylene 13, a gate insulating film 16 and a gate electrode 17. Thus, an electrostatic protective circuit of a bio-chip is obtained to realize the bio-chip.
JP62201455A 1987-08-12 1987-08-12 Protective circuit Pending JPS6444055A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62201455A JPS6444055A (en) 1987-08-12 1987-08-12 Protective circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62201455A JPS6444055A (en) 1987-08-12 1987-08-12 Protective circuit

Publications (1)

Publication Number Publication Date
JPS6444055A true JPS6444055A (en) 1989-02-16

Family

ID=16441375

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62201455A Pending JPS6444055A (en) 1987-08-12 1987-08-12 Protective circuit

Country Status (1)

Country Link
JP (1) JPS6444055A (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060047174A1 (en) * 2004-08-24 2006-03-02 Eastman Kodak Company Process for photo-oxidative stability improvements
JP2008124085A (en) * 2006-11-08 2008-05-29 Canon Inc Organic thin film transistor
US20090115310A1 (en) * 2005-06-06 2009-05-07 Sharp Kabushiki Kaisha Coating liquid for hole injection and transport layer, production method of hole injection and transport layer, organic electroluminescent element, and production method thereof
US20090314991A1 (en) * 2008-01-14 2009-12-24 Samsung Electronics Co., Ltd. Quantum dot ink composition for inkjet printing and electronic device using the same
JP2011195566A (en) * 2010-02-25 2011-10-06 Adeka Corp NEW BIBENZO[b]FURAN COMPOUND, ORGANIC SEMICONDUCTOR MATERIAL CONTAINING THE SAME, AND ORGANIC SEMICONDUCTOR ELEMENT USING THE ORGANIC SEMICONDUCTOR MATERIAL
WO2011151460A1 (en) * 2010-06-04 2011-12-08 Plastic Logic Limited Production of electronic switching devices

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060047174A1 (en) * 2004-08-24 2006-03-02 Eastman Kodak Company Process for photo-oxidative stability improvements
US20090115310A1 (en) * 2005-06-06 2009-05-07 Sharp Kabushiki Kaisha Coating liquid for hole injection and transport layer, production method of hole injection and transport layer, organic electroluminescent element, and production method thereof
JP2008124085A (en) * 2006-11-08 2008-05-29 Canon Inc Organic thin film transistor
US20090314991A1 (en) * 2008-01-14 2009-12-24 Samsung Electronics Co., Ltd. Quantum dot ink composition for inkjet printing and electronic device using the same
JP2011195566A (en) * 2010-02-25 2011-10-06 Adeka Corp NEW BIBENZO[b]FURAN COMPOUND, ORGANIC SEMICONDUCTOR MATERIAL CONTAINING THE SAME, AND ORGANIC SEMICONDUCTOR ELEMENT USING THE ORGANIC SEMICONDUCTOR MATERIAL
WO2011151460A1 (en) * 2010-06-04 2011-12-08 Plastic Logic Limited Production of electronic switching devices

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