JPS6441253A - Semiconductor device frame - Google Patents

Semiconductor device frame

Info

Publication number
JPS6441253A
JPS6441253A JP62198464A JP19846487A JPS6441253A JP S6441253 A JPS6441253 A JP S6441253A JP 62198464 A JP62198464 A JP 62198464A JP 19846487 A JP19846487 A JP 19846487A JP S6441253 A JPS6441253 A JP S6441253A
Authority
JP
Japan
Prior art keywords
die pad
pad part
heat dissipating
dissipating segment
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62198464A
Other languages
Japanese (ja)
Inventor
Takahiko Shirato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62198464A priority Critical patent/JPS6441253A/en
Publication of JPS6441253A publication Critical patent/JPS6441253A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

PURPOSE:To obtain a semiconductor device frame whose material cost is low, by punching and forming a lead terminal group, a die pad part and a heat dissipating segment from a thin metal plate of uniform thickness, and making the heat dissipating segment face with each other by bending it toward the rear side of the die pad part. CONSTITUTION:A lead terminal group 3, a die pad part 5 on which a semiconductor element is mounted and a heat dissipating segment 8 connecting to a die pad part 5 are formed by punching a metal plate of uniform thickness. Heat generated from a chip mounted on a die pad part 5 is absorbed by the heat dissipating segment 8 which is unified in a body together with the die pad part 5 and arranged on the rear so as to be faced with each other. The die pad part 5 and the heat dissipating segment 8 function substantially as a thick-walled metal material with large heat capacity. Thereby, a semiconductor device frame whose material cost is low can be obtained.
JP62198464A 1987-08-06 1987-08-06 Semiconductor device frame Pending JPS6441253A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62198464A JPS6441253A (en) 1987-08-06 1987-08-06 Semiconductor device frame

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62198464A JPS6441253A (en) 1987-08-06 1987-08-06 Semiconductor device frame

Publications (1)

Publication Number Publication Date
JPS6441253A true JPS6441253A (en) 1989-02-13

Family

ID=16391542

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62198464A Pending JPS6441253A (en) 1987-08-06 1987-08-06 Semiconductor device frame

Country Status (1)

Country Link
JP (1) JPS6441253A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5350943A (en) * 1992-04-18 1994-09-27 Temic Telefunken Microelectronic Gmbh Semiconductor assembly, in particular a remote control reception module
EP0638929A1 (en) * 1993-08-09 1995-02-15 STMicroelectronics S.A. Heat sink for plastic package
JPH0786477A (en) * 1993-09-03 1995-03-31 Internatl Business Mach Corp <Ibm> Circuit package and its forming method
WO1998013867A1 (en) * 1996-09-24 1998-04-02 Siemens Aktiengesellschaft Connecting frame for a microelectronic component, manufacturing process and microelectronic component encompassing same
WO1998013866A1 (en) * 1996-09-24 1998-04-02 Siemens Aktiengesellschaft Connecting frame of microelectronic component, manufacturing process, and the microelectronic component encompassing same
DE19639181A1 (en) * 1996-09-24 1998-04-02 Siemens Ag Lead frame for a microelectronic component
US6175150B1 (en) 1997-04-17 2001-01-16 Nec Corporation Plastic-encapsulated semiconductor device and fabrication method thereof
JP2008181983A (en) * 2007-01-24 2008-08-07 Matsushita Electric Ind Co Ltd Lead frame for semiconductor device and method of manufacturing semiconductor device using the same
JP2015170787A (en) * 2014-03-10 2015-09-28 新電元工業株式会社 Resin-sealed semiconductor device

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5350943A (en) * 1992-04-18 1994-09-27 Temic Telefunken Microelectronic Gmbh Semiconductor assembly, in particular a remote control reception module
EP0638929A1 (en) * 1993-08-09 1995-02-15 STMicroelectronics S.A. Heat sink for plastic package
FR2709021A1 (en) * 1993-08-09 1995-02-17 Sgs Thomson Microelectronics Heat sink for plastic housing.
US5675182A (en) * 1993-08-09 1997-10-07 Sgs-Thomson Microelectronics S.A. Heat sink for plastic casings
US5781992A (en) * 1993-08-09 1998-07-21 Sgs-Thomson Microelectronics S.A. Heat sink for plastic casings
JPH0786477A (en) * 1993-09-03 1995-03-31 Internatl Business Mach Corp <Ibm> Circuit package and its forming method
WO1998013867A1 (en) * 1996-09-24 1998-04-02 Siemens Aktiengesellschaft Connecting frame for a microelectronic component, manufacturing process and microelectronic component encompassing same
WO1998013866A1 (en) * 1996-09-24 1998-04-02 Siemens Aktiengesellschaft Connecting frame of microelectronic component, manufacturing process, and the microelectronic component encompassing same
DE19639181A1 (en) * 1996-09-24 1998-04-02 Siemens Ag Lead frame for a microelectronic component
US6175150B1 (en) 1997-04-17 2001-01-16 Nec Corporation Plastic-encapsulated semiconductor device and fabrication method thereof
JP2008181983A (en) * 2007-01-24 2008-08-07 Matsushita Electric Ind Co Ltd Lead frame for semiconductor device and method of manufacturing semiconductor device using the same
JP2015170787A (en) * 2014-03-10 2015-09-28 新電元工業株式会社 Resin-sealed semiconductor device

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