JPS6441169U - - Google Patents

Info

Publication number
JPS6441169U
JPS6441169U JP1988112207U JP11220788U JPS6441169U JP S6441169 U JPS6441169 U JP S6441169U JP 1988112207 U JP1988112207 U JP 1988112207U JP 11220788 U JP11220788 U JP 11220788U JP S6441169 U JPS6441169 U JP S6441169U
Authority
JP
Japan
Prior art keywords
coating
conductive substrate
film
conductive
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1988112207U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS6441169U publication Critical patent/JPS6441169U/ja
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
    • B24C1/00—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods
    • B24C1/08—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods for polishing surfaces, e.g. smoothing a surface by making use of liquid-borne abrasives
    • B24C1/086—Descaling; Removing coating films
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
    • B24C1/00—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods
    • B24C1/04—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods for treating only selected parts of a surface, e.g. for carving stone or glass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
    • B24C3/00—Abrasive blasting machines or devices; Plants
    • B24C3/32—Abrasive blasting machines or devices; Plants designed for abrasive blasting of particular work, e.g. the internal surfaces of cylinder blocks
    • B24C3/322—Abrasive blasting machines or devices; Plants designed for abrasive blasting of particular work, e.g. the internal surfaces of cylinder blocks for electrical components
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/51—Metallising, e.g. infiltration of sintered ceramic preforms with molten metal
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
    • C04B41/5338—Etching
    • C04B41/5353—Wet etching, e.g. with etchants dissolved in organic solvents
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C04B41/88—Metals
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/91—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics involving the removal of part of the materials of the treated articles, e.g. etching

Description

【図面の簡単な説明】
第１図は本考案導電性コーテイングを形成する
第１の工程を示す基板の横断面図、第２図は第２
の工程を示す基板の横断面図、第３図は第３の工
程を示す基板の横断面図、第４図は第４の工程を
示す基板の横断面図、第５図は第５の工程を示す
基板の横断面図である。第６図は変型による第６
の工程を示す基板の横断面図である。 １０……膜コーテイング、１２……基板、１４
……マスク膜、１６……マスク付き部分、１８…
…マスクなし部分。

Claims (1)

  1. 【実用新案登録請求の範囲】 (1) (イ) 約５０μｉｎないし約２５０μｉｎ
    の厚さを持つ、アンチモンをドープした酸化すず
    から成る実質的に連続した膜コーテイングを、実
    質的に非導電性の基板上に形成することと、 (ロ) 前記アンチモンをドープした酸化すずに
    比較して耐空気研削性の金属材料から成るマスク
    膜を、前記膜コーテイングに一体的に付着するこ
    とと、 (ハ) 前記マスク膜を選択的にエツチングして
    、前記膜コーテイング上に所望のパターンに対応
    するマスク付き部分とマスクなし部分とを形成す
    るように、マスクをつくり出すことと、 (ニ) 前記膜コーテイングを空気研削すること
    により、前記膜コーテイングの前記マスク付き部
    分を前記非導電性の基板上に残したままにし、前
    記膜コーテイングの前 記マスクなし部分を除去
    することと、 を包含する工程によつてパターンが描かれた、実
    質的に非導電性の基板上に形成された導電性コー
    テイング。 (2) 前記膜コーテイングから前記マスクを除去
    することにより、前記非導電性の基板上に前記膜
    コーテイングに描画される所望の前記膜パターン
    を生じさせることをさらに包含する実用新案登録
    請求の範囲第(1)項記載の工程によつてパターン
    が描かれた、実質的に非導電性の基板上に形成さ
    れた導電性コーテイング。 (3) 約１０μないし約２５μの粒度を持つ空気
    研削粒子を、約５０ｐｓｉゲージ圧の空気圧力源
    によつて推進することをさらに包含する実用新案
    登録請求の範囲第(1)項記載の工程によつてパタ
    ーンが描かれた、実質的に非導電性の基板上に形
    成された導電性コーテイング。 (4) 前記マスクを、化学的エツチングによつて
    前記膜コーテイングから選択的に除去することを
    さらに包含する実用新案登録請求の範囲第(1)項
    記載の工程によつてパターンが描かれた、実質的
    に非導電性の基板上に形成された導電性コーテイ
    ング。
JP1988112207U 1979-06-06 1988-08-29 Pending JPS6441169U (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/046,031 US4232059A (en) 1979-06-06 1979-06-06 Process of defining film patterns on microelectronic substrates by air abrading

Publications (1)

Publication Number Publication Date
JPS6441169U true JPS6441169U (ja) 1989-03-13

Family

ID=21941207

Family Applications (2)

Application Number Title Priority Date Filing Date
JP7568080A Pending JPS5626491A (en) 1979-06-06 1980-06-06 Method of partitioning profile of conductive coating
JP1988112207U Pending JPS6441169U (ja) 1979-06-06 1988-08-29

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP7568080A Pending JPS5626491A (en) 1979-06-06 1980-06-06 Method of partitioning profile of conductive coating

Country Status (3)

Country Link
US (1) US4232059A (ja)
JP (2) JPS5626491A (ja)
GB (1) GB2050218A (ja)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5669835A (en) * 1979-11-09 1981-06-11 Japan Electronic Ind Dev Assoc<Jeida> Method for forming thin film pattern
US4838656A (en) * 1980-10-06 1989-06-13 Andus Corporation Transparent electrode fabrication
US4442137A (en) * 1982-03-18 1984-04-10 International Business Machines Corporation Maskless coating of metallurgical features of a dielectric substrate
NL8403134A (nl) * 1984-10-15 1986-05-01 Oce Nederland Bv Werkwijze voor het vervaardigen van een gerasterde laag voor een electrofotografisch element.
US4908246A (en) * 1988-01-26 1990-03-13 James River Corporation Metalized microwave interactive laminate and process for mechanically deactivating a selected area of microwave interactive laminate
US5170245A (en) * 1988-06-15 1992-12-08 International Business Machines Corp. Semiconductor device having metallic interconnects formed by grit blasting
US4896464A (en) * 1988-06-15 1990-01-30 International Business Machines Corporation Formation of metallic interconnects by grit blasting
US5085015A (en) * 1990-06-26 1992-02-04 E. I. Du Pont De Nemours And Company Process for improving the surface of liquid crystal polymers
US5105588A (en) * 1990-09-10 1992-04-21 Hewlett-Packard Company Method and apparatus for simultaneously forming a plurality of openings through a substrate
BE1007894A3 (nl) * 1993-12-20 1995-11-14 Philips Electronics Nv Werkwijze voor het vervaardigen van een plaat van niet-metallisch materiaal met een patroon van gaten en/of holten.
US5636441A (en) * 1995-03-16 1997-06-10 Hewlett-Packard Company Method of forming a heating element for a printhead
JPH10245286A (ja) * 1997-01-06 1998-09-14 Murata Mfg Co Ltd セラミック電子部品の電極パターン形成方法及び誘電体共振器の入出力電極形成方法
JP3330836B2 (ja) 1997-01-22 2002-09-30 太陽誘電株式会社 積層電子部品の製造方法
US5976396A (en) * 1998-02-10 1999-11-02 Feldman Technology Corporation Method for etching
US6227944B1 (en) * 1999-03-25 2001-05-08 Memc Electronics Materials, Inc. Method for processing a semiconductor wafer
GB0021747D0 (en) * 2000-09-04 2000-10-18 Cambridge Consultants Coating removal
US6554687B1 (en) * 2000-09-27 2003-04-29 Virginia Semiconductor, Inc. Precise crystallographic-orientation alignment mark for a semiconductor wafer
US7037177B2 (en) * 2001-08-30 2006-05-02 Micron Technology, Inc. Method and apparatus for conditioning a chemical-mechanical polishing pad
US7271700B2 (en) * 2005-02-16 2007-09-18 International Business Machines Corporation Thin film resistor with current density enhancing layer (CDEL)
US7444727B2 (en) * 2006-03-10 2008-11-04 Motorola, Inc. Method for forming multi-layer embedded capacitors on a printed circuit board
SG154342A1 (en) * 2008-01-08 2009-08-28 Opulent Electronics Internat P Insulated metal substrate fabrication
EP3245664B1 (en) * 2015-01-13 2021-07-21 Director General, Centre For Materials For Electronics Technology A non-conductive substrate with tracks formed by sand blasting

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5432771A (en) * 1977-08-17 1979-03-10 E Systems Inc Method of forming thin film pattern on microelectronic engineering body

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3240624A (en) * 1962-03-07 1966-03-15 Corning Glass Works Method of forming a patterned electroconductive coating
US3210214A (en) * 1962-11-29 1965-10-05 Sylvania Electric Prod Electrical conductive patterns
US3419425A (en) * 1965-10-21 1968-12-31 Ibm Method of selectively removing powdered glass
US3873361A (en) * 1973-11-29 1975-03-25 Ibm Method of depositing thin film utilizing a lift-off mask
DE2522346C3 (de) * 1975-05-20 1978-10-26 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von Halbleiterbauelementen
US4020535A (en) * 1975-08-01 1977-05-03 Metropolitan Circuits, Inc. Method of making an electro-discharge electrode
US4027323A (en) * 1976-09-07 1977-05-31 Honeywell Inc. Photodetector array delineation method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5432771A (en) * 1977-08-17 1979-03-10 E Systems Inc Method of forming thin film pattern on microelectronic engineering body

Also Published As

Publication number Publication date
GB2050218A (en) 1981-01-07
US4232059A (en) 1980-11-04
JPS5626491A (en) 1981-03-14

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