JPS6439733A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6439733A JPS6439733A JP19661387A JP19661387A JPS6439733A JP S6439733 A JPS6439733 A JP S6439733A JP 19661387 A JP19661387 A JP 19661387A JP 19661387 A JP19661387 A JP 19661387A JP S6439733 A JPS6439733 A JP S6439733A
- Authority
- JP
- Japan
- Prior art keywords
- powder
- wafer
- silicon
- glass
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000843 powder Substances 0.000 abstract 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052710 silicon Inorganic materials 0.000 abstract 6
- 239000010703 silicon Substances 0.000 abstract 6
- 239000011521 glass Substances 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 3
- 239000002075 main ingredient Substances 0.000 abstract 2
- 238000005498 polishing Methods 0.000 abstract 2
- 239000010409 thin film Substances 0.000 abstract 2
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Landscapes
- Formation Of Insulating Films (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19661387A JPS6439733A (en) | 1987-08-06 | 1987-08-06 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19661387A JPS6439733A (en) | 1987-08-06 | 1987-08-06 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6439733A true JPS6439733A (en) | 1989-02-10 |
Family
ID=16360669
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19661387A Pending JPS6439733A (en) | 1987-08-06 | 1987-08-06 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6439733A (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2781928A1 (fr) * | 1998-07-28 | 2000-02-04 | Opsis | Dispositif comprenant une puce semi-conductrice a substrat originel isolant et transparent |
-
1987
- 1987-08-06 JP JP19661387A patent/JPS6439733A/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2781928A1 (fr) * | 1998-07-28 | 2000-02-04 | Opsis | Dispositif comprenant une puce semi-conductrice a substrat originel isolant et transparent |
| WO2000007243A1 (fr) * | 1998-07-28 | 2000-02-10 | Societe Anonyme Opsis | Dispositif comprenant une puce semi-conductrice a substrat originel isolant et transparent |
| US6433362B1 (en) | 1998-07-28 | 2002-08-13 | Opsis | Semiconductor device with insulating and transparent original substrate |
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