JPS643840B2 - - Google Patents
Info
- Publication number
- JPS643840B2 JPS643840B2 JP12074380A JP12074380A JPS643840B2 JP S643840 B2 JPS643840 B2 JP S643840B2 JP 12074380 A JP12074380 A JP 12074380A JP 12074380 A JP12074380 A JP 12074380A JP S643840 B2 JPS643840 B2 JP S643840B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- crystal substrate
- inert gas
- water vapor
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005530 etching Methods 0.000 claims description 49
- 239000000758 substrate Substances 0.000 claims description 26
- 150000002500 ions Chemical class 0.000 claims description 23
- 239000013078 crystal Substances 0.000 claims description 20
- 239000007789 gas Substances 0.000 claims description 20
- 239000011261 inert gas Substances 0.000 claims description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 13
- 238000010884 ion-beam technique Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000000992 sputter etching Methods 0.000 description 3
- -1 argon ions Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12074380A JPS5747800A (en) | 1980-09-01 | 1980-09-01 | Etching method for crystal substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12074380A JPS5747800A (en) | 1980-09-01 | 1980-09-01 | Etching method for crystal substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5747800A JPS5747800A (en) | 1982-03-18 |
| JPS643840B2 true JPS643840B2 (fr) | 1989-01-23 |
Family
ID=14793879
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12074380A Granted JPS5747800A (en) | 1980-09-01 | 1980-09-01 | Etching method for crystal substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5747800A (fr) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07116678B2 (ja) * | 1991-10-30 | 1995-12-13 | 株式会社小林製作所 | ツインワイヤ式抄紙機 |
| US5958799A (en) * | 1995-04-13 | 1999-09-28 | North Carolina State University | Method for water vapor enhanced charged-particle-beam machining |
| US5626716A (en) * | 1995-09-29 | 1997-05-06 | Lam Research Corporation | Plasma etching of semiconductors |
-
1980
- 1980-09-01 JP JP12074380A patent/JPS5747800A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5747800A (en) | 1982-03-18 |
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