JPS6437026A - Individual semiconductor device and manufacture thereof - Google Patents

Individual semiconductor device and manufacture thereof

Info

Publication number
JPS6437026A
JPS6437026A JP19346587A JP19346587A JPS6437026A JP S6437026 A JPS6437026 A JP S6437026A JP 19346587 A JP19346587 A JP 19346587A JP 19346587 A JP19346587 A JP 19346587A JP S6437026 A JPS6437026 A JP S6437026A
Authority
JP
Japan
Prior art keywords
substrate
junction surface
layer
manufacture
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19346587A
Other languages
Japanese (ja)
Inventor
Koichi Kudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP19346587A priority Critical patent/JPS6437026A/en
Publication of JPS6437026A publication Critical patent/JPS6437026A/en
Pending legal-status Critical Current

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  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To lessen the size of a chip as well as to contrive the improvement of the breakdown strength of the title device by a method wherein the junction surface between a semiconductor layer having a type opposite to that of a substrate and the substrate is formed into a planar form and an insulative buried material is formed from the end parts of the device to the surface of the device in such a way as to cover this junction surface. CONSTITUTION:A semiconductor layer 5 having a type opposite to that of a substrate 2 is formed on this substrate 2 and electrodes 8 and 9 are respectively formed on this layer 5 and the rear of the substrate 2. At this time, the junction surface between the layer 5 and the substrate 2 is formed into a planar form and an insulative buried material 4 is formed from the end parts of a device to the surface of the device in such a way as to cover this junction surface. Thereby, an electric field and a current do not concentrate on the junction surface, no punch-through occurs up to a high voltage and moreover, as a surface collector region, which does not contribute to the operation of an element so much, does not exist, the size of a chip can be reduced.
JP19346587A 1987-07-31 1987-07-31 Individual semiconductor device and manufacture thereof Pending JPS6437026A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19346587A JPS6437026A (en) 1987-07-31 1987-07-31 Individual semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19346587A JPS6437026A (en) 1987-07-31 1987-07-31 Individual semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS6437026A true JPS6437026A (en) 1989-02-07

Family

ID=16308459

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19346587A Pending JPS6437026A (en) 1987-07-31 1987-07-31 Individual semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS6437026A (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4918276A (en) * 1972-06-08 1974-02-18
JPS57106049A (en) * 1980-12-22 1982-07-01 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS57128044A (en) * 1981-01-30 1982-08-09 Nec Home Electronics Ltd Cutting method for semiconductor wafer
JPS6189666A (en) * 1984-10-09 1986-05-07 Fujitsu Ltd Semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4918276A (en) * 1972-06-08 1974-02-18
JPS57106049A (en) * 1980-12-22 1982-07-01 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS57128044A (en) * 1981-01-30 1982-08-09 Nec Home Electronics Ltd Cutting method for semiconductor wafer
JPS6189666A (en) * 1984-10-09 1986-05-07 Fujitsu Ltd Semiconductor device

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