JPS6437026A - Individual semiconductor device and manufacture thereof - Google Patents
Individual semiconductor device and manufacture thereofInfo
- Publication number
- JPS6437026A JPS6437026A JP19346587A JP19346587A JPS6437026A JP S6437026 A JPS6437026 A JP S6437026A JP 19346587 A JP19346587 A JP 19346587A JP 19346587 A JP19346587 A JP 19346587A JP S6437026 A JPS6437026 A JP S6437026A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- junction surface
- layer
- manufacture
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To lessen the size of a chip as well as to contrive the improvement of the breakdown strength of the title device by a method wherein the junction surface between a semiconductor layer having a type opposite to that of a substrate and the substrate is formed into a planar form and an insulative buried material is formed from the end parts of the device to the surface of the device in such a way as to cover this junction surface. CONSTITUTION:A semiconductor layer 5 having a type opposite to that of a substrate 2 is formed on this substrate 2 and electrodes 8 and 9 are respectively formed on this layer 5 and the rear of the substrate 2. At this time, the junction surface between the layer 5 and the substrate 2 is formed into a planar form and an insulative buried material 4 is formed from the end parts of a device to the surface of the device in such a way as to cover this junction surface. Thereby, an electric field and a current do not concentrate on the junction surface, no punch-through occurs up to a high voltage and moreover, as a surface collector region, which does not contribute to the operation of an element so much, does not exist, the size of a chip can be reduced.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19346587A JPS6437026A (en) | 1987-07-31 | 1987-07-31 | Individual semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19346587A JPS6437026A (en) | 1987-07-31 | 1987-07-31 | Individual semiconductor device and manufacture thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6437026A true JPS6437026A (en) | 1989-02-07 |
Family
ID=16308459
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19346587A Pending JPS6437026A (en) | 1987-07-31 | 1987-07-31 | Individual semiconductor device and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6437026A (en) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4918276A (en) * | 1972-06-08 | 1974-02-18 | ||
JPS57106049A (en) * | 1980-12-22 | 1982-07-01 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPS57128044A (en) * | 1981-01-30 | 1982-08-09 | Nec Home Electronics Ltd | Cutting method for semiconductor wafer |
JPS6189666A (en) * | 1984-10-09 | 1986-05-07 | Fujitsu Ltd | Semiconductor device |
-
1987
- 1987-07-31 JP JP19346587A patent/JPS6437026A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4918276A (en) * | 1972-06-08 | 1974-02-18 | ||
JPS57106049A (en) * | 1980-12-22 | 1982-07-01 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPS57128044A (en) * | 1981-01-30 | 1982-08-09 | Nec Home Electronics Ltd | Cutting method for semiconductor wafer |
JPS6189666A (en) * | 1984-10-09 | 1986-05-07 | Fujitsu Ltd | Semiconductor device |
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