JPS6436070A - Manufacture of bipolar transistor - Google Patents

Manufacture of bipolar transistor

Info

Publication number
JPS6436070A
JPS6436070A JP62191737A JP19173787A JPS6436070A JP S6436070 A JPS6436070 A JP S6436070A JP 62191737 A JP62191737 A JP 62191737A JP 19173787 A JP19173787 A JP 19173787A JP S6436070 A JPS6436070 A JP S6436070A
Authority
JP
Japan
Prior art keywords
opening
semiconductor layer
bipolar transistor
forming
same thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62191737A
Other languages
English (en)
Other versions
JP2615641B2 (ja
Inventor
Hiroyuki Miwa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP62191737A priority Critical patent/JP2615641B2/ja
Publication of JPS6436070A publication Critical patent/JPS6436070A/ja
Application granted granted Critical
Publication of JP2615641B2 publication Critical patent/JP2615641B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP62191737A 1987-07-31 1987-07-31 半導体装置およびその製造方法 Expired - Fee Related JP2615641B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62191737A JP2615641B2 (ja) 1987-07-31 1987-07-31 半導体装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62191737A JP2615641B2 (ja) 1987-07-31 1987-07-31 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPS6436070A true JPS6436070A (en) 1989-02-07
JP2615641B2 JP2615641B2 (ja) 1997-06-04

Family

ID=16279660

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62191737A Expired - Fee Related JP2615641B2 (ja) 1987-07-31 1987-07-31 半導体装置およびその製造方法

Country Status (1)

Country Link
JP (1) JP2615641B2 (ja)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58216463A (ja) * 1982-06-07 1983-12-16 インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション バイポ−ラ・トランジスタ

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58216463A (ja) * 1982-06-07 1983-12-16 インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション バイポ−ラ・トランジスタ

Also Published As

Publication number Publication date
JP2615641B2 (ja) 1997-06-04

Similar Documents

Publication Publication Date Title
US3971059A (en) Complementary bipolar transistors having collector diffused isolation
US4283236A (en) Method of fabricating lateral PNP transistors utilizing selective diffusion and counter doping
US4016007A (en) Method for fabricating a silicon device utilizing ion-implantation and selective oxidation
JP2950577B2 (ja) BiCMOS半導体集積回路の製造方法
JPS6361777B2 (ja)
GB1335814A (en) Transistor and method of manufacturing the same
US4502894A (en) Method of fabricating polycrystalline silicon resistors in integrated circuit structures using outdiffusion
KR900005123B1 (ko) 바이폴라 트랜지스터의 제조방법
US4498224A (en) Method of manufacturing a MOSFET using accelerated ions to form an amorphous region
JPS57196573A (en) Manufacture of mos type semiconductor device
US4170502A (en) Method of manufacturing a gate turn-off thyristor
JPS6360549B2 (ja)
US3847677A (en) Method of manufacturing semiconductor devices
JPS6436070A (en) Manufacture of bipolar transistor
JPS6484659A (en) Manufacture of semiconductor device
JPS6428861A (en) Cmos integrated circuit with connection parts from upper surface to substrate
JPH0376591B2 (ja)
US20020185677A1 (en) Electronic power device integrated on a semiconductor material and related manufacturing process
JPS6489446A (en) Manufacture of semiconductor device
JPH077748B2 (ja) 半導体装置の製造方法
JPH01143358A (ja) Mos型半導体集積回路装置の製造方法
JPS5522875A (en) Manufacturing method of semiconductor integrated circuit device with lateral transistor
JP2506129B2 (ja) 半導体装置の製造方法
JPS57153462A (en) Manufacture of semiconductor integrated circuit device
JPH023915A (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees