JPS6435978A - Wavelength-tunable semiconductor laser - Google Patents

Wavelength-tunable semiconductor laser

Info

Publication number
JPS6435978A
JPS6435978A JP62190040A JP19004087A JPS6435978A JP S6435978 A JPS6435978 A JP S6435978A JP 62190040 A JP62190040 A JP 62190040A JP 19004087 A JP19004087 A JP 19004087A JP S6435978 A JPS6435978 A JP S6435978A
Authority
JP
Japan
Prior art keywords
wavelength
semiconductor laser
electric field
layer
quantum well
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62190040A
Other languages
English (en)
Other versions
JP2749038B2 (ja
Inventor
Kazuhisa Uomi
Shinji Tsuji
Shinji Sakano
Makoto Okai
Naoki Kayane
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62190040A priority Critical patent/JP2749038B2/ja
Priority to US07/224,726 priority patent/US4873691A/en
Publication of JPS6435978A publication Critical patent/JPS6435978A/ja
Application granted granted Critical
Publication of JP2749038B2 publication Critical patent/JP2749038B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
    • H01S3/1055—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length one of the reflectors being constituted by a diffraction grating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
JP62190040A 1987-07-31 1987-07-31 波長可変半導体レーザ Expired - Lifetime JP2749038B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP62190040A JP2749038B2 (ja) 1987-07-31 1987-07-31 波長可変半導体レーザ
US07/224,726 US4873691A (en) 1987-07-31 1988-07-27 Wavelength-tunable semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62190040A JP2749038B2 (ja) 1987-07-31 1987-07-31 波長可変半導体レーザ

Publications (2)

Publication Number Publication Date
JPS6435978A true JPS6435978A (en) 1989-02-07
JP2749038B2 JP2749038B2 (ja) 1998-05-13

Family

ID=16251359

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62190040A Expired - Lifetime JP2749038B2 (ja) 1987-07-31 1987-07-31 波長可変半導体レーザ

Country Status (2)

Country Link
US (1) US4873691A (ja)
JP (1) JP2749038B2 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100828492B1 (ko) * 2007-01-30 2008-05-13 (주)선재하이테크 방전전극소켓

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2746326B2 (ja) * 1989-01-10 1998-05-06 株式会社日立製作所 半導体光素子
US5020153A (en) * 1989-02-08 1991-05-28 At&T Bell Laboratories Tunable narrowband receiver utilizing distributed Bragg reflector laser structure
US5220573A (en) * 1989-03-10 1993-06-15 Canon Kabushiki Kaisha Optical apparatus using wavelength selective photocoupler
EP0391334B1 (en) * 1989-04-04 1994-08-31 Canon Kabushiki Kaisha Semiconductor laser element capable of changing emission wavelength, and wavelength selective fitter, and methods of driving the same
DE3934998A1 (de) * 1989-10-20 1991-04-25 Standard Elektrik Lorenz Ag Elektrisch wellenlaengenabstimmbarer halbleiterlaser
US5088097A (en) * 1990-04-04 1992-02-11 Canon Kabushiki Kaisha Semiconductor laser element capable of changing emission wavelength, and method of driving the same
JP3152424B2 (ja) * 1990-07-13 2001-04-03 株式会社日立製作所 波長可変半導体レーザ
US5091916A (en) * 1990-09-28 1992-02-25 At&T Bell Laboratories Distributed reflector laser having improved side mode suppression
US5157537A (en) * 1991-02-01 1992-10-20 Yeda Research And Development Co., Ltd. Distributed resonant cavity light beam modulator
SE470454B (sv) * 1992-08-26 1994-04-11 Ericsson Telefon Ab L M Optisk filteranordning
JP2536714B2 (ja) * 1993-03-03 1996-09-18 日本電気株式会社 光変調器集積型多重量子井戸構造半導体レ―ザ素子
JP2500617B2 (ja) * 1993-06-25 1996-05-29 日本電気株式会社 屈折率制御光半導体構造
JPH0738204A (ja) * 1993-07-20 1995-02-07 Mitsubishi Electric Corp 半導体光デバイス及びその製造方法
GB2292011B (en) * 1993-07-20 1997-11-05 Mitsubishi Electric Corp Semiconductor optical devices and methods for fabricating semiconductor optical devices
US6194240B1 (en) * 1993-12-21 2001-02-27 Lucent Technologies Inc. Method for fabrication of wavelength selective electro-optic grating for DFB/DBR lasers
JPH08255891A (ja) * 1995-03-17 1996-10-01 Mitsubishi Electric Corp 光集積回路装置及びその駆動方法
FR2748353B1 (fr) * 1996-05-06 1998-07-31 France Telecom Composants d'emission laser a reseau de bragg distribue
JP3404242B2 (ja) * 1997-02-14 2003-05-06 日本電気株式会社 波長可変半導体レーザの駆動方法及び波長可変光源装置
GB2354110A (en) * 1999-09-08 2001-03-14 Univ Bristol Ridge waveguide lasers
JP2001320124A (ja) * 2000-05-09 2001-11-16 Nec Corp 変調器集積化光源及び光通信用モジュール
US6678301B1 (en) * 2000-07-14 2004-01-13 Triquint Technology Holding Co. Apparatus and method for minimizing wavelength chirp of laser devices
AU2001293015A1 (en) * 2000-09-25 2002-04-08 Massachusetts Institute Of Technology Optical micro-cavity sensors
WO2002039166A1 (en) * 2000-11-13 2002-05-16 Zhongshan Liu Laser array for generating stable multi-wavelength laser outputs
US7003010B2 (en) * 2000-11-27 2006-02-21 Zhongshan Liu Multi-group multi-wavelength laser matrix
GB2369491A (en) * 2000-11-28 2002-05-29 Kamelian Ltd Tunable semiconductor laser
US6717964B2 (en) * 2001-07-02 2004-04-06 E20 Communications, Inc. Method and apparatus for wavelength tuning of optically pumped vertical cavity surface emitting lasers
US6643308B2 (en) * 2001-07-06 2003-11-04 The Furukawa Electric Co., Ltd. Semiconductor laser device and method for suppressing injection current
GB0124217D0 (en) * 2001-10-09 2001-11-28 Denselight Semiconductors Pte Two-section distributed bragg reflector laser
FR2830991B1 (fr) * 2001-10-15 2004-01-30 Cit Alcatel Cavite optique resonante sur une plage continue de frequences
US7106920B2 (en) * 2001-11-13 2006-09-12 Zhongshan Liu Laser array for generating stable multi-wavelength laser outputs
EP1396913A1 (en) * 2002-09-03 2004-03-10 Agilent Technologies, Inc. - a Delaware corporation - Single mode distributed feedback lasers
US20060126157A1 (en) * 2004-12-14 2006-06-15 Electronics And Telecommunications Research Institute Monolithic integrated semiconductor modulator-SOA-LED broad band light source and method of fabricating the same
US7723139B2 (en) * 2007-10-01 2010-05-25 Corning Incorporated Quantum well intermixing
CN112740492B (zh) * 2019-01-04 2023-04-04 华为技术有限公司 半导体激光器、光发射组件、光线路终端及光网络单元
CN112670823B (zh) * 2020-12-23 2022-03-11 中国科学院半导体研究所 电吸收调制激光器的制作方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60145692A (ja) * 1984-01-10 1985-08-01 Nec Corp 単一軸モ−ド半導体レ−ザ
JPS6154690A (ja) * 1984-08-24 1986-03-18 Nec Corp 半導体レ−ザ装置
JPS61168980A (ja) * 1985-01-22 1986-07-30 Nippon Telegr & Teleph Corp <Ntt> 半導体発光素子
JPS61198212A (ja) * 1985-02-28 1986-09-02 Tokyo Inst Of Technol 光回路機能素子
JPS61220389A (ja) * 1985-03-26 1986-09-30 Nec Corp 集積型半導体レ−ザ
JPS63313885A (ja) * 1987-06-17 1988-12-21 Fujitsu Ltd 半導体発光装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60145692A (ja) * 1984-01-10 1985-08-01 Nec Corp 単一軸モ−ド半導体レ−ザ
JPS6154690A (ja) * 1984-08-24 1986-03-18 Nec Corp 半導体レ−ザ装置
JPS61168980A (ja) * 1985-01-22 1986-07-30 Nippon Telegr & Teleph Corp <Ntt> 半導体発光素子
JPS61198212A (ja) * 1985-02-28 1986-09-02 Tokyo Inst Of Technol 光回路機能素子
JPS61220389A (ja) * 1985-03-26 1986-09-30 Nec Corp 集積型半導体レ−ザ
JPS63313885A (ja) * 1987-06-17 1988-12-21 Fujitsu Ltd 半導体発光装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100828492B1 (ko) * 2007-01-30 2008-05-13 (주)선재하이테크 방전전극소켓

Also Published As

Publication number Publication date
US4873691A (en) 1989-10-10
JP2749038B2 (ja) 1998-05-13

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