JPS6456413A - Semiconductor optical element - Google Patents
Semiconductor optical elementInfo
- Publication number
- JPS6456413A JPS6456413A JP6901887A JP6901887A JPS6456413A JP S6456413 A JPS6456413 A JP S6456413A JP 6901887 A JP6901887 A JP 6901887A JP 6901887 A JP6901887 A JP 6901887A JP S6456413 A JPS6456413 A JP S6456413A
- Authority
- JP
- Japan
- Prior art keywords
- quantum well
- electric field
- width
- absorption peak
- shift quantity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To suppress the spread of the light absorption peak of a multiple quantum well structure and to provide the improved performances such as increased extinction ratio of an optical amplifier and reduced electric power consumption of an optical bistable element by taking the forbidden band width of the quantum well positioned in a high electric field part larger than the forbidden band width of the quantum well existing in a low electric field part. CONSTITUTION:The energy shift quantity by the wavelength increasing of the exciton absorption peak by electric field impression depends highly on the quantum well width Lw in the form of Lw<4>. The effect of spreading the absorption peak by the nonuniform electric fields in the respective quantum wells is, therefore, suppressed if the energy shift quantity of the quantum well impressed with the high electric field is decreased by reducing the width thereof and if the energy shift quantity of the quantum well impressed with the low electric field is increased by increasing the width thereof. The quantization level of this time changes as well. The spread of the absorption peak occurring in the nonuniform electric fields which is generated when the element is reverse biased to the element operating potential is thus eliminated by taking both into consideration.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6901887A JPS6456413A (en) | 1987-03-25 | 1987-03-25 | Semiconductor optical element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6901887A JPS6456413A (en) | 1987-03-25 | 1987-03-25 | Semiconductor optical element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6456413A true JPS6456413A (en) | 1989-03-03 |
Family
ID=13390428
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6901887A Pending JPS6456413A (en) | 1987-03-25 | 1987-03-25 | Semiconductor optical element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6456413A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02302718A (en) * | 1989-05-18 | 1990-12-14 | Hikari Gijutsu Kenkyu Kaihatsu Kk | Semiconductor optical element having quantum well structure |
| JP2000250816A (en) * | 1997-06-10 | 2000-09-14 | St Microelectronics Sa | Authentification method for integrated circuit |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS623221A (en) * | 1985-06-28 | 1987-01-09 | Nec Corp | Optical modulator |
| JPS62169115A (en) * | 1986-01-21 | 1987-07-25 | Nec Corp | Optical modulator |
-
1987
- 1987-03-25 JP JP6901887A patent/JPS6456413A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS623221A (en) * | 1985-06-28 | 1987-01-09 | Nec Corp | Optical modulator |
| JPS62169115A (en) * | 1986-01-21 | 1987-07-25 | Nec Corp | Optical modulator |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02302718A (en) * | 1989-05-18 | 1990-12-14 | Hikari Gijutsu Kenkyu Kaihatsu Kk | Semiconductor optical element having quantum well structure |
| JP2000250816A (en) * | 1997-06-10 | 2000-09-14 | St Microelectronics Sa | Authentification method for integrated circuit |
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