JPS5681991A - Laser diode - Google Patents

Laser diode

Info

Publication number
JPS5681991A
JPS5681991A JP15877279A JP15877279A JPS5681991A JP S5681991 A JPS5681991 A JP S5681991A JP 15877279 A JP15877279 A JP 15877279A JP 15877279 A JP15877279 A JP 15877279A JP S5681991 A JPS5681991 A JP S5681991A
Authority
JP
Japan
Prior art keywords
region
thickness
depletion layer
voltage
density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15877279A
Other languages
Japanese (ja)
Inventor
Nobuo Shimoma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP15877279A priority Critical patent/JPS5681991A/en
Publication of JPS5681991A publication Critical patent/JPS5681991A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06203—Transistor-type lasers

Abstract

PURPOSE:To enable production of several laser light rays from a single laser diode and variation of the laser light rays in amplitude by forming the light emitting unit variable in structure. CONSTITUTION:An N region 4 is low density impurity region of impurity density Nd. By representing specific dielectric constant with epsilonr of the region 4, the potential applied externally to the controlled P type region 9 with V, and barrier potential difference when voltage is not applied to the region 9 with Vd, the thickness d of the depletion layer becomes as indicated by the right side formula. In the formula, the region 9 has sufficiently high density as compared with the impurity density of the region 4 to be thus ignored. Thus, a depletion layer having a thickness d is formed toward the region 4 from the region 9. Since the depletion layer having a thickness d proportional to the 1/2 square of the voltage V applied to the region 9 is formed in the region 4 in reverse bias direction externally, when the reverse bias voltage V is gradually increased, a part to which a current flows can be eliminated from the region 4 at certain time.
JP15877279A 1979-12-07 1979-12-07 Laser diode Pending JPS5681991A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15877279A JPS5681991A (en) 1979-12-07 1979-12-07 Laser diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15877279A JPS5681991A (en) 1979-12-07 1979-12-07 Laser diode

Publications (1)

Publication Number Publication Date
JPS5681991A true JPS5681991A (en) 1981-07-04

Family

ID=15678998

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15877279A Pending JPS5681991A (en) 1979-12-07 1979-12-07 Laser diode

Country Status (1)

Country Link
JP (1) JPS5681991A (en)

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