JPS6432677A - Manufacture of field-effect transistor - Google Patents
Manufacture of field-effect transistorInfo
- Publication number
- JPS6432677A JPS6432677A JP18937587A JP18937587A JPS6432677A JP S6432677 A JPS6432677 A JP S6432677A JP 18937587 A JP18937587 A JP 18937587A JP 18937587 A JP18937587 A JP 18937587A JP S6432677 A JPS6432677 A JP S6432677A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- trench
- oxide film
- substrate
- shaped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To reduce the rate of an occupying area per one field-effect transistor to the main surface of a substrate by vertically forming the surface of a channel and a gate to the main surface of the substrate. CONSTITUTION:Boron is implanted at multistages where a drain 3, a source 4 and a channel region 5 must be shaped, using a resist 11 as a mask on a P-type substrate 2. An Si oxide film 13 is etched selectively to form a trench 14. The position of the trench 14 is determined so that the trench 14 is brought into contact directly with the channel region 5 at that time. An Si oxide film 15 is shaped onto the inwall surface of the trench 14. The oxide film on the region 5 side of the film 15 is employed as a gate oxide film. A gate electrode material is laminated onto the top face of the substrate 2, and a gate 6 is formed. The drain 3 and the source 4 are shaped through self-alignment, using the gate 6 as a mask. Accordingly, an area per one FET is reduced, thus preventing the positional displacement of a channel section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18937587A JPS6432677A (en) | 1987-07-28 | 1987-07-28 | Manufacture of field-effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18937587A JPS6432677A (en) | 1987-07-28 | 1987-07-28 | Manufacture of field-effect transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6432677A true JPS6432677A (en) | 1989-02-02 |
Family
ID=16240264
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18937587A Pending JPS6432677A (en) | 1987-07-28 | 1987-07-28 | Manufacture of field-effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6432677A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1990013918A1 (en) * | 1989-05-12 | 1990-11-15 | Oki Electric Industry Co., Ltd. | Field effect transistor |
-
1987
- 1987-07-28 JP JP18937587A patent/JPS6432677A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1990013918A1 (en) * | 1989-05-12 | 1990-11-15 | Oki Electric Industry Co., Ltd. | Field effect transistor |
| US5281547A (en) * | 1989-05-12 | 1994-01-25 | Oki Electric Industry Co., Ltd. | Method for manufacturing a field effect transistor |
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