JPS6432626A - Manufacture of mask for x-ray lithography - Google Patents
Manufacture of mask for x-ray lithographyInfo
- Publication number
- JPS6432626A JPS6432626A JP18950287A JP18950287A JPS6432626A JP S6432626 A JPS6432626 A JP S6432626A JP 18950287 A JP18950287 A JP 18950287A JP 18950287 A JP18950287 A JP 18950287A JP S6432626 A JPS6432626 A JP S6432626A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- mask
- resist film
- mask pattern
- primary
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To obtain a hyperfine mask pattern having a high aspect ratio by overlapping a plurality of mask patterns having a low aspect ratio and forming a secondary pattern through complete adhesive exposure using a previously shaped primary pattern. CONSTITUTION:A housing 1 consists of silicon, and a primary pattern 10 is shaped in such a manner that gold is evaporated onto the whole surface of a support film 2 and the pattern 10 is formed through a selective etching method. A negative type is used as a resist film 4, and selective exposure is conducted. The surface of the primary mask pattern 10 is exposed through etching while a trench 7 employing the exposed surface as a bottom is shaped to the resist film 4. A secondary mask pattern 20 is formed by evaporating gold. The resist film 4 is removed from the upper section of the support film 2 by acetone, and the metal 7 on the resist film is also gotten rid of through lift-off at that time. A mask pattern 30 completed is composed of the overlapping body of the first and second mask patterns.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18950287A JPS6432626A (en) | 1987-07-28 | 1987-07-28 | Manufacture of mask for x-ray lithography |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18950287A JPS6432626A (en) | 1987-07-28 | 1987-07-28 | Manufacture of mask for x-ray lithography |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6432626A true JPS6432626A (en) | 1989-02-02 |
Family
ID=16242343
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18950287A Pending JPS6432626A (en) | 1987-07-28 | 1987-07-28 | Manufacture of mask for x-ray lithography |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6432626A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04276618A (en) * | 1991-01-25 | 1992-10-01 | Internatl Business Mach Corp <Ibm> | X-ray mask with high resolution including absorber pattern having high aspect ratio |
-
1987
- 1987-07-28 JP JP18950287A patent/JPS6432626A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04276618A (en) * | 1991-01-25 | 1992-10-01 | Internatl Business Mach Corp <Ibm> | X-ray mask with high resolution including absorber pattern having high aspect ratio |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS6432626A (en) | Manufacture of mask for x-ray lithography | |
JPS647525A (en) | Pattern formation | |
JPS5492061A (en) | Micropattern forming method | |
JPS542668A (en) | Manufacture of semiconductor device | |
JPS5623746A (en) | Manufacture of semiconductor device | |
JPS6488546A (en) | Method for exposing thick film resist | |
JPS54141573A (en) | Mask for exposure | |
JPS53147465A (en) | Forming method of patterns for lift-off | |
JPS5556629A (en) | Pattern forming method | |
JPS5251874A (en) | Electron beam exposure device | |
JPS55128832A (en) | Method of making minute pattern | |
JPS5376757A (en) | Photoetching method | |
JPS6421450A (en) | Production of mask | |
JPS5618420A (en) | Manufacture of semiconductor device | |
JPS5568626A (en) | Pattern formation | |
JPS5347825A (en) | Photoresist exposure | |
JPS5619045A (en) | Electron beam sensitive inorganic resist | |
JPS5379444A (en) | Magnetic bubble element | |
JPS6422028A (en) | Forming method for pattern | |
JPS5315075A (en) | Forming method of etching mask in photoetching process | |
JPS5244571A (en) | Method of forming fine pattern | |
JPS5376397A (en) | Photo mask for manufacturing magnetic bubble element | |
JPS5711344A (en) | Dry developing method | |
JPS52119079A (en) | Electron beam exposure | |
JPS5413334A (en) | Exposure |