JPS6432626A - Manufacture of mask for x-ray lithography - Google Patents

Manufacture of mask for x-ray lithography

Info

Publication number
JPS6432626A
JPS6432626A JP18950287A JP18950287A JPS6432626A JP S6432626 A JPS6432626 A JP S6432626A JP 18950287 A JP18950287 A JP 18950287A JP 18950287 A JP18950287 A JP 18950287A JP S6432626 A JPS6432626 A JP S6432626A
Authority
JP
Japan
Prior art keywords
pattern
mask
resist film
mask pattern
primary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18950287A
Other languages
Japanese (ja)
Inventor
Shunichi Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP18950287A priority Critical patent/JPS6432626A/en
Publication of JPS6432626A publication Critical patent/JPS6432626A/en
Pending legal-status Critical Current

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To obtain a hyperfine mask pattern having a high aspect ratio by overlapping a plurality of mask patterns having a low aspect ratio and forming a secondary pattern through complete adhesive exposure using a previously shaped primary pattern. CONSTITUTION:A housing 1 consists of silicon, and a primary pattern 10 is shaped in such a manner that gold is evaporated onto the whole surface of a support film 2 and the pattern 10 is formed through a selective etching method. A negative type is used as a resist film 4, and selective exposure is conducted. The surface of the primary mask pattern 10 is exposed through etching while a trench 7 employing the exposed surface as a bottom is shaped to the resist film 4. A secondary mask pattern 20 is formed by evaporating gold. The resist film 4 is removed from the upper section of the support film 2 by acetone, and the metal 7 on the resist film is also gotten rid of through lift-off at that time. A mask pattern 30 completed is composed of the overlapping body of the first and second mask patterns.
JP18950287A 1987-07-28 1987-07-28 Manufacture of mask for x-ray lithography Pending JPS6432626A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18950287A JPS6432626A (en) 1987-07-28 1987-07-28 Manufacture of mask for x-ray lithography

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18950287A JPS6432626A (en) 1987-07-28 1987-07-28 Manufacture of mask for x-ray lithography

Publications (1)

Publication Number Publication Date
JPS6432626A true JPS6432626A (en) 1989-02-02

Family

ID=16242343

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18950287A Pending JPS6432626A (en) 1987-07-28 1987-07-28 Manufacture of mask for x-ray lithography

Country Status (1)

Country Link
JP (1) JPS6432626A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04276618A (en) * 1991-01-25 1992-10-01 Internatl Business Mach Corp <Ibm> X-ray mask with high resolution including absorber pattern having high aspect ratio

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04276618A (en) * 1991-01-25 1992-10-01 Internatl Business Mach Corp <Ibm> X-ray mask with high resolution including absorber pattern having high aspect ratio

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