JPS6431491A - Semiconductor laser array element - Google Patents

Semiconductor laser array element

Info

Publication number
JPS6431491A
JPS6431491A JP62188279A JP18827987A JPS6431491A JP S6431491 A JPS6431491 A JP S6431491A JP 62188279 A JP62188279 A JP 62188279A JP 18827987 A JP18827987 A JP 18827987A JP S6431491 A JPS6431491 A JP S6431491A
Authority
JP
Japan
Prior art keywords
grooves
mesa
layer
substrate
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62188279A
Other languages
English (en)
Other versions
JPH0646668B2 (ja
Inventor
Taiji Morimoto
Hiroyuki Hosobane
Akihiro Matsumoto
Mototaka Tanetani
Kaneki Matsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP62188279A priority Critical patent/JPH0646668B2/ja
Priority to US07/224,558 priority patent/US4878223A/en
Priority to DE88306896T priority patent/DE3885180T2/de
Priority to EP88306896A priority patent/EP0301818B1/en
Publication of JPS6431491A publication Critical patent/JPS6431491A/ja
Publication of JPH0646668B2 publication Critical patent/JPH0646668B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP62188279A 1987-07-28 1987-07-28 半導体レ−ザアレイ素子 Expired - Lifetime JPH0646668B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP62188279A JPH0646668B2 (ja) 1987-07-28 1987-07-28 半導体レ−ザアレイ素子
US07/224,558 US4878223A (en) 1987-07-28 1988-07-26 Semiconductor laser array device
DE88306896T DE3885180T2 (de) 1987-07-28 1988-07-27 Halbleiterlaser-Vielfachanordnung.
EP88306896A EP0301818B1 (en) 1987-07-28 1988-07-27 Semiconductor laser array device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62188279A JPH0646668B2 (ja) 1987-07-28 1987-07-28 半導体レ−ザアレイ素子

Publications (2)

Publication Number Publication Date
JPS6431491A true JPS6431491A (en) 1989-02-01
JPH0646668B2 JPH0646668B2 (ja) 1994-06-15

Family

ID=16220870

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62188279A Expired - Lifetime JPH0646668B2 (ja) 1987-07-28 1987-07-28 半導体レ−ザアレイ素子

Country Status (4)

Country Link
US (1) US4878223A (ja)
EP (1) EP0301818B1 (ja)
JP (1) JPH0646668B2 (ja)
DE (1) DE3885180T2 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5042044A (en) * 1989-04-28 1991-08-20 Sharp Kabushiki Kaisha Semiconductor laser device, a semiconductor wafer

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5206185A (en) * 1988-12-29 1993-04-27 Sharp Kabushiki Kaisha Semiconductor laser device
US5208823A (en) * 1991-09-03 1993-05-04 Applied Solar Energy Corporation Optically isolated laser diode array
US5877766A (en) * 1997-08-15 1999-03-02 International Business Machines Corporation Multi-node user interface component and method thereof for use in accessing a plurality of linked records
US20040252738A1 (en) * 2003-01-22 2004-12-16 Hill Steven E. Light emitting diodes and planar optical lasers using IV semiconductor nanocrystals

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60245191A (ja) * 1984-05-18 1985-12-04 Sharp Corp 単一ビ−ム形半導体レ−ザアレイ装置
JPS61113294A (ja) * 1984-11-07 1986-05-31 Sharp Corp 半導体レ−ザアレイ装置
JPS6235689A (ja) * 1985-08-09 1987-02-16 Sharp Corp 半導体レ−ザアレイ装置
JPS62115795A (ja) * 1985-11-14 1987-05-27 Matsushita Electric Ind Co Ltd 半導体レ−ザアレイ装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5042044A (en) * 1989-04-28 1991-08-20 Sharp Kabushiki Kaisha Semiconductor laser device, a semiconductor wafer

Also Published As

Publication number Publication date
DE3885180D1 (de) 1993-12-02
DE3885180T2 (de) 1994-02-24
EP0301818A3 (en) 1990-07-18
US4878223A (en) 1989-10-31
EP0301818B1 (en) 1993-10-27
JPH0646668B2 (ja) 1994-06-15
EP0301818A2 (en) 1989-02-01

Similar Documents

Publication Publication Date Title
US5892784A (en) N-drive p-common surface emitting laser fabricated on n+ substrate
US4169997A (en) Lateral current confinement in junction lasers
US5031187A (en) Planar array of vertical-cavity, surface-emitting lasers
US5283447A (en) Integration of transistors with vertical cavity surface emitting lasers
US5132982A (en) Optically controlled surface-emitting lasers
US4577321A (en) Integrated quantum well lasers for wavelength division multiplexing
EP0288267B1 (en) An optical semiconductor device
CA2031541C (en) Vertical semiconductor laser with lateral electrode contact
EP0261262A1 (en) Transverse junction stripe laser
US4280108A (en) Transverse junction array laser
JPS6431491A (en) Semiconductor laser array element
KR100381984B1 (ko) 수직공동표면방출레이저(VCSEL)및수직공동표면방출레이저들(VCSELs)용패턴화된미러들의제조방법
JPS6432694A (en) Manufacture of semiconductor device in which laser diode and photodiode with expanded light receiving plane are unified
JPS568889A (en) Manufacture of semiconductor laser
Donnelly et al. CW operation of monolithic arrays of surface-emitting folded-cavity InGaAs/AlGaAs diode lasers
Geels et al. Narrow-linewidth, low threshold vertical-cavity surface-emitting lasers
JPS55158689A (en) Semiconductor light emitting device and manufacture thereof
JPS6425589A (en) Semiconductor laser array
JPH0311689A (ja) 面発光型波長制御ｄｂｒレーザ
JPS56134792A (en) Semiconductor laser device
JPS5591892A (en) Semiconductor laser light emission device
JPS6459882A (en) Semiconductor laser
JPS5527622A (en) Semiconductor laser manufacturing method
JPS6476782A (en) Semiconductor light-emitting diode
JPS6432693A (en) Semiconductor optical functional light-emitting element