JPS6425589A - Semiconductor laser array - Google Patents

Semiconductor laser array

Info

Publication number
JPS6425589A
JPS6425589A JP18253287A JP18253287A JPS6425589A JP S6425589 A JPS6425589 A JP S6425589A JP 18253287 A JP18253287 A JP 18253287A JP 18253287 A JP18253287 A JP 18253287A JP S6425589 A JPS6425589 A JP S6425589A
Authority
JP
Japan
Prior art keywords
layer
grown
semiconductor laser
light emitting
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18253287A
Other languages
Japanese (ja)
Other versions
JP2523664B2 (en
Inventor
Hiroki Naito
Masahiro Kume
Yuichi Shimizu
Kunio Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62182532A priority Critical patent/JP2523664B2/en
Publication of JPS6425589A publication Critical patent/JPS6425589A/en
Application granted granted Critical
Publication of JP2523664B2 publication Critical patent/JP2523664B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE:To reduce the interval of light emitting sections and to change wavelength by using longitudinally arranged two double hetero p-n junctions as light emitting sections. CONSTITUTION:A mesa 18 is formed on a p-type GaAs substrate and an n-type GaAs layer 2 is grown to cover it up. A groove 16 and a ridge 19 which are to be current channels are formed on the mesa, and layers 3-7 are grown by liquid growth. After a groove 17 which is to be a current channel is formed, an n-GaAlAs layer 8, a GaAlAs layer 9, a p-GaAlAs layer 10 and a p-GaAs layer 11 are liquid phase-grown. Then a groove 20 is formed to attain to an n-GaAs layer 6. After this, the entire upper surface is covered with SiO2 leaving SiO2 only over an etching edge surface 21. Then upper electrodes 13 and 14 are vaporization-formed on p-type and n-type GaAs layer 1 and 6, respectively. On the entire surface of substrate, an electrode 15 is vaporized. As for the spectral characteristics of semiconductor laser arrays when driven at once, the interval of light emitting sections is about 10mum and different oscillation wavelengthes can be acquired allowing independent driving of each semiconductor laser.
JP62182532A 1987-07-22 1987-07-22 Semiconductor laser array device Expired - Fee Related JP2523664B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62182532A JP2523664B2 (en) 1987-07-22 1987-07-22 Semiconductor laser array device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62182532A JP2523664B2 (en) 1987-07-22 1987-07-22 Semiconductor laser array device

Publications (2)

Publication Number Publication Date
JPS6425589A true JPS6425589A (en) 1989-01-27
JP2523664B2 JP2523664B2 (en) 1996-08-14

Family

ID=16119952

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62182532A Expired - Fee Related JP2523664B2 (en) 1987-07-22 1987-07-22 Semiconductor laser array device

Country Status (1)

Country Link
JP (1) JP2523664B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5638391A (en) * 1994-12-21 1997-06-10 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser device and optical disc apparatus provided with the semiclonductor laser device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6187384A (en) * 1984-09-13 1986-05-02 Seiko Epson Corp Laminated multi-wavelength semiconductor laser device
JPS62115795A (en) * 1985-11-14 1987-05-27 Matsushita Electric Ind Co Ltd Semiconductor laser array device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6187384A (en) * 1984-09-13 1986-05-02 Seiko Epson Corp Laminated multi-wavelength semiconductor laser device
JPS62115795A (en) * 1985-11-14 1987-05-27 Matsushita Electric Ind Co Ltd Semiconductor laser array device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5638391A (en) * 1994-12-21 1997-06-10 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser device and optical disc apparatus provided with the semiclonductor laser device

Also Published As

Publication number Publication date
JP2523664B2 (en) 1996-08-14

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees