JPS643066B2 - - Google Patents
Info
- Publication number
- JPS643066B2 JPS643066B2 JP56114772A JP11477281A JPS643066B2 JP S643066 B2 JPS643066 B2 JP S643066B2 JP 56114772 A JP56114772 A JP 56114772A JP 11477281 A JP11477281 A JP 11477281A JP S643066 B2 JPS643066 B2 JP S643066B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- substrate
- diffusion
- drain
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56114772A JPS57118666A (en) | 1981-07-22 | 1981-07-22 | Complementary mos integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56114772A JPS57118666A (en) | 1981-07-22 | 1981-07-22 | Complementary mos integrated circuit device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3306372A Division JPS5710569B2 (cs) | 1972-03-31 | 1972-03-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57118666A JPS57118666A (en) | 1982-07-23 |
| JPS643066B2 true JPS643066B2 (cs) | 1989-01-19 |
Family
ID=14646299
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56114772A Granted JPS57118666A (en) | 1981-07-22 | 1981-07-22 | Complementary mos integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57118666A (cs) |
-
1981
- 1981-07-22 JP JP56114772A patent/JPS57118666A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57118666A (en) | 1982-07-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4545114A (en) | Method of producing semiconductor device | |
| US4716131A (en) | Method of manufacturing semiconductor device having polycrystalline silicon layer with metal silicide film | |
| US5200348A (en) | Method of manufacturing semiconductor device with constant width deep groove isolation | |
| JPS59188974A (ja) | 半導体装置の製造方法 | |
| JPS58220445A (ja) | 半導体集積回路の製造方法 | |
| US4216573A (en) | Three mask process for making field effect transistors | |
| JPH09252129A (ja) | 電界効果トランジスタ及びその製造方法 | |
| JP2782781B2 (ja) | 半導体装置の製造方法 | |
| JP2624948B2 (ja) | Ｍｏｓ−ｆｅｔ製造方法 | |
| JPS608636B2 (ja) | 半導体装置の製造方法 | |
| JPS643066B2 (cs) | ||
| JPS605065B2 (ja) | Ｍｉｓ形半導体装置の製造方法 | |
| JP3360970B2 (ja) | 半導体装置の製造方法 | |
| JP3225368B2 (ja) | 半導体装置 | |
| JP3584866B2 (ja) | 半導体装置の製造方法 | |
| JPS59168675A (ja) | 半導体装置の製法 | |
| JPH067596B2 (ja) | 半導体装置の製造方法 | |
| JPS6237543B2 (cs) | ||
| JPH0128507B2 (cs) | ||
| JPS603157A (ja) | 半導体装置の製造方法 | |
| JPH0582066B2 (cs) | ||
| JPS5943832B2 (ja) | 半導体装置の製造方法 | |
| JPH0252859B2 (cs) | ||
| JPS6113392B2 (cs) | ||
| JPH05144933A (ja) | 半導体装置およびその製造方法 |