JPS642935B2 - - Google Patents
Info
- Publication number
- JPS642935B2 JPS642935B2 JP18084886A JP18084886A JPS642935B2 JP S642935 B2 JPS642935 B2 JP S642935B2 JP 18084886 A JP18084886 A JP 18084886A JP 18084886 A JP18084886 A JP 18084886A JP S642935 B2 JPS642935 B2 JP S642935B2
- Authority
- JP
- Japan
- Prior art keywords
- photomask
- laser beam
- defects
- white
- black
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000007547 defect Effects 0.000 claims description 79
- 239000011651 chromium Substances 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 35
- 230000008439 repair process Effects 0.000 claims description 29
- 238000012937 correction Methods 0.000 claims description 15
- 229910052804 chromium Inorganic materials 0.000 claims description 9
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 230000003252 repetitive effect Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 description 18
- 238000010884 ion-beam technique Methods 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000010436 fluorite Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000001182 laser chemical vapour deposition Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000012255 powdered metal Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61180848A JPS6336249A (ja) | 1986-07-31 | 1986-07-31 | ホトマスク修正方式 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61180848A JPS6336249A (ja) | 1986-07-31 | 1986-07-31 | ホトマスク修正方式 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6336249A JPS6336249A (ja) | 1988-02-16 |
| JPS642935B2 true JPS642935B2 (zh) | 1989-01-19 |
Family
ID=16090415
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61180848A Granted JPS6336249A (ja) | 1986-07-31 | 1986-07-31 | ホトマスク修正方式 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6336249A (zh) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3050556B2 (ja) * | 1989-01-23 | 2000-06-12 | 大日本印刷株式会社 | エマルジョンマスク等の欠陥部修正方法 |
| JP2795681B2 (ja) * | 1989-06-26 | 1998-09-10 | 株式会社ニデック | 薄膜修正加工装置 |
| JP3479833B2 (ja) | 2000-08-22 | 2003-12-15 | 日本電気株式会社 | レーザ修正方法および装置 |
| JP3479838B2 (ja) | 2000-10-19 | 2003-12-15 | 日本電気株式会社 | パターン修正方法及びパターン修正装置 |
| JP4258814B2 (ja) * | 2004-11-11 | 2009-04-30 | オリンパス株式会社 | 顕微鏡の照明装置 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5793346A (en) * | 1980-12-03 | 1982-06-10 | Fujitsu Ltd | Production of photomask plate |
| JPS59105320A (ja) * | 1982-12-08 | 1984-06-18 | Sanyo Electric Co Ltd | ホトマスクの欠損欠陥修正法 |
-
1986
- 1986-07-31 JP JP61180848A patent/JPS6336249A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6336249A (ja) | 1988-02-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| EXPY | Cancellation because of completion of term |