JPS6428921A - Plasma treatment device - Google Patents

Plasma treatment device

Info

Publication number
JPS6428921A
JPS6428921A JP18483687A JP18483687A JPS6428921A JP S6428921 A JPS6428921 A JP S6428921A JP 18483687 A JP18483687 A JP 18483687A JP 18483687 A JP18483687 A JP 18483687A JP S6428921 A JPS6428921 A JP S6428921A
Authority
JP
Japan
Prior art keywords
permanent magnet
stop
arbitrary position
uniformly
detect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18483687A
Other languages
English (en)
Inventor
Takahiro Anada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokuda Seisakusho Co Ltd
Original Assignee
Tokuda Seisakusho Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokuda Seisakusho Co Ltd filed Critical Tokuda Seisakusho Co Ltd
Priority to JP18483687A priority Critical patent/JPS6428921A/ja
Publication of JPS6428921A publication Critical patent/JPS6428921A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP18483687A 1987-07-24 1987-07-24 Plasma treatment device Pending JPS6428921A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18483687A JPS6428921A (en) 1987-07-24 1987-07-24 Plasma treatment device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18483687A JPS6428921A (en) 1987-07-24 1987-07-24 Plasma treatment device

Publications (1)

Publication Number Publication Date
JPS6428921A true JPS6428921A (en) 1989-01-31

Family

ID=16160160

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18483687A Pending JPS6428921A (en) 1987-07-24 1987-07-24 Plasma treatment device

Country Status (1)

Country Link
JP (1) JPS6428921A (ja)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5482610A (en) * 1991-11-14 1996-01-09 Leybold Aktiengesellschaft Cathode for coating a substrate
US6183614B1 (en) * 1999-02-12 2001-02-06 Applied Materials, Inc. Rotating sputter magnetron assembly
US6290825B1 (en) 1999-02-12 2001-09-18 Applied Materials, Inc. High-density plasma source for ionized metal deposition
WO2001081100A1 (fr) 2000-04-25 2001-11-01 Pentel Kabushiki Kaisha Dispositif d'enduction
US6497802B2 (en) 1999-02-12 2002-12-24 Applied Materials, Inc. Self ionized plasma sputtering
US6692617B1 (en) * 1997-05-08 2004-02-17 Applied Materials, Inc. Sustained self-sputtering reactor having an increased density plasma
US6790323B2 (en) 1999-02-12 2004-09-14 Applied Materials, Inc. Self ionized sputtering using a high density plasma source
US9051641B2 (en) 2001-07-25 2015-06-09 Applied Materials, Inc. Cobalt deposition on barrier surfaces
CN111733394A (zh) * 2020-08-10 2020-10-02 光驰科技(上海)有限公司 一种可适时调节磁场角度的孪生旋转溅射阴极装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56156763A (en) * 1980-05-02 1981-12-03 Tohoku Metal Ind Ltd Finely working method and apparatus by plasma sputtering
JPS6091641A (ja) * 1983-10-25 1985-05-23 Toshiba Corp 反応性イオンエツチング装置
JPS6272121A (ja) * 1985-09-26 1987-04-02 Tokuda Seisakusho Ltd 半導体処理装置
JPS6321833A (ja) * 1986-07-16 1988-01-29 Toshiba Corp ドライエツチング装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56156763A (en) * 1980-05-02 1981-12-03 Tohoku Metal Ind Ltd Finely working method and apparatus by plasma sputtering
JPS6091641A (ja) * 1983-10-25 1985-05-23 Toshiba Corp 反応性イオンエツチング装置
JPS6272121A (ja) * 1985-09-26 1987-04-02 Tokuda Seisakusho Ltd 半導体処理装置
JPS6321833A (ja) * 1986-07-16 1988-01-29 Toshiba Corp ドライエツチング装置

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5482610A (en) * 1991-11-14 1996-01-09 Leybold Aktiengesellschaft Cathode for coating a substrate
US6692617B1 (en) * 1997-05-08 2004-02-17 Applied Materials, Inc. Sustained self-sputtering reactor having an increased density plasma
US6960284B2 (en) 1997-05-08 2005-11-01 Applied Materials, Inc. Rotational and reciprocal radial movement of a sputtering magnetron
US6183614B1 (en) * 1999-02-12 2001-02-06 Applied Materials, Inc. Rotating sputter magnetron assembly
US6290825B1 (en) 1999-02-12 2001-09-18 Applied Materials, Inc. High-density plasma source for ionized metal deposition
US6497802B2 (en) 1999-02-12 2002-12-24 Applied Materials, Inc. Self ionized plasma sputtering
US6790323B2 (en) 1999-02-12 2004-09-14 Applied Materials, Inc. Self ionized sputtering using a high density plasma source
WO2001081100A1 (fr) 2000-04-25 2001-11-01 Pentel Kabushiki Kaisha Dispositif d'enduction
US9051641B2 (en) 2001-07-25 2015-06-09 Applied Materials, Inc. Cobalt deposition on barrier surfaces
CN111733394A (zh) * 2020-08-10 2020-10-02 光驰科技(上海)有限公司 一种可适时调节磁场角度的孪生旋转溅射阴极装置

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