JPS6428822A - Plasma etching device - Google Patents
Plasma etching deviceInfo
- Publication number
- JPS6428822A JPS6428822A JP18329487A JP18329487A JPS6428822A JP S6428822 A JPS6428822 A JP S6428822A JP 18329487 A JP18329487 A JP 18329487A JP 18329487 A JP18329487 A JP 18329487A JP S6428822 A JPS6428822 A JP S6428822A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- main chamber
- selection ratio
- sub
- dissociated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To improve the selection ratio of etching by a method wherein such of dissociated products produced by the discharge of reactive gas in a main chamber as deteriorate the selection ratio of etching process are coupled with other dissociated products of additive gas in an auxiliary chamber to be removed. CONSTITUTION:A chamber 2 is divided into a main chamber 2a provided with a specimen base 3 and a sub chamber 2b formed outside the main chamber 2a. The partition wall 6 partitioning the main chamber 2a with the sub chamber 2b is made of a porous material with breathability. Reactive gas and additive gas are respectively led into the main chamber 2a and the sub chamber 2b. A feeder pipe 7 is connected to the chamber 2. Through these procedures, an F radical out of the dissociated products produced by the discharge of reactive gas in the main chamber 2a, the other dissociated product (H<+>, H2<+> ion) of the additive gas in the sub chamber 2b are coupled with one another to be removed at the position distant from a wafer 1. Thus, the selection ratio of etching can be improved.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62183294A JP2624966B2 (en) | 1987-07-24 | 1987-07-24 | Plasma etching equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62183294A JP2624966B2 (en) | 1987-07-24 | 1987-07-24 | Plasma etching equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6428822A true JPS6428822A (en) | 1989-01-31 |
JP2624966B2 JP2624966B2 (en) | 1997-06-25 |
Family
ID=16133144
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62183294A Expired - Fee Related JP2624966B2 (en) | 1987-07-24 | 1987-07-24 | Plasma etching equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2624966B2 (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5675573A (en) * | 1979-11-22 | 1981-06-22 | Toshiba Corp | Ion etching method |
JPS62115700A (en) * | 1985-11-15 | 1987-05-27 | キヤノン株式会社 | Vapor phase exciter |
-
1987
- 1987-07-24 JP JP62183294A patent/JP2624966B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5675573A (en) * | 1979-11-22 | 1981-06-22 | Toshiba Corp | Ion etching method |
JPS62115700A (en) * | 1985-11-15 | 1987-05-27 | キヤノン株式会社 | Vapor phase exciter |
Also Published As
Publication number | Publication date |
---|---|
JP2624966B2 (en) | 1997-06-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |