JPS6427270A - Field-effect type semiconductor device - Google Patents

Field-effect type semiconductor device

Info

Publication number
JPS6427270A
JPS6427270A JP18214487A JP18214487A JPS6427270A JP S6427270 A JPS6427270 A JP S6427270A JP 18214487 A JP18214487 A JP 18214487A JP 18214487 A JP18214487 A JP 18214487A JP S6427270 A JPS6427270 A JP S6427270A
Authority
JP
Japan
Prior art keywords
channel region
gate
region
brought
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18214487A
Other languages
English (en)
Other versions
JPH069245B2 (ja
Inventor
Hiroaki Hazama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP62182144A priority Critical patent/JPH069245B2/ja
Publication of JPS6427270A publication Critical patent/JPS6427270A/ja
Publication of JPH069245B2 publication Critical patent/JPH069245B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
JP62182144A 1987-07-23 1987-07-23 電界効果型半導体装置 Expired - Lifetime JPH069245B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62182144A JPH069245B2 (ja) 1987-07-23 1987-07-23 電界効果型半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62182144A JPH069245B2 (ja) 1987-07-23 1987-07-23 電界効果型半導体装置

Publications (2)

Publication Number Publication Date
JPS6427270A true JPS6427270A (en) 1989-01-30
JPH069245B2 JPH069245B2 (ja) 1994-02-02

Family

ID=16113125

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62182144A Expired - Lifetime JPH069245B2 (ja) 1987-07-23 1987-07-23 電界効果型半導体装置

Country Status (1)

Country Link
JP (1) JPH069245B2 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02263473A (ja) * 1988-11-21 1990-10-26 Hitachi Ltd 半導体装置及び半導体記憶装置
US5309010A (en) * 1991-05-27 1994-05-03 Nec Corporation Semiconductor device having improved thin film transistors
US7061055B2 (en) 2001-03-13 2006-06-13 National Institute Of Advanced Industrial Science And Technology Double-gate field-effect transistor, integrated circuit using the transistor and method of manufacturing the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6017964A (ja) * 1983-07-11 1985-01-29 Toshiba Corp 半導体装置
JPS6094773A (ja) * 1983-10-27 1985-05-27 Agency Of Ind Science & Technol 電界効果トランジスタ

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6017964A (ja) * 1983-07-11 1985-01-29 Toshiba Corp 半導体装置
JPS6094773A (ja) * 1983-10-27 1985-05-27 Agency Of Ind Science & Technol 電界効果トランジスタ

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02263473A (ja) * 1988-11-21 1990-10-26 Hitachi Ltd 半導体装置及び半導体記憶装置
US5309010A (en) * 1991-05-27 1994-05-03 Nec Corporation Semiconductor device having improved thin film transistors
US7061055B2 (en) 2001-03-13 2006-06-13 National Institute Of Advanced Industrial Science And Technology Double-gate field-effect transistor, integrated circuit using the transistor and method of manufacturing the same

Also Published As

Publication number Publication date
JPH069245B2 (ja) 1994-02-02

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term