JPS6424089A - Device for adjusting initial position of melt surface - Google Patents

Device for adjusting initial position of melt surface

Info

Publication number
JPS6424089A
JPS6424089A JP62181722A JP18172287A JPS6424089A JP S6424089 A JPS6424089 A JP S6424089A JP 62181722 A JP62181722 A JP 62181722A JP 18172287 A JP18172287 A JP 18172287A JP S6424089 A JPS6424089 A JP S6424089A
Authority
JP
Japan
Prior art keywords
melt
crystal
crucible
melt surface
measuring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62181722A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0559876B2 (enExample
Inventor
Nobuo Katsuoka
Yoshihiro Hirano
Munenori Tomita
Atsushi Ozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to JP62181722A priority Critical patent/JPS6424089A/ja
Priority to US07/222,438 priority patent/US4915775A/en
Priority to DE8888710019T priority patent/DE3875015T2/de
Priority to EP88710019A priority patent/EP0301998B1/en
Publication of JPS6424089A publication Critical patent/JPS6424089A/ja
Publication of JPH0559876B2 publication Critical patent/JPH0559876B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP62181722A 1987-07-21 1987-07-21 Device for adjusting initial position of melt surface Granted JPS6424089A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP62181722A JPS6424089A (en) 1987-07-21 1987-07-21 Device for adjusting initial position of melt surface
US07/222,438 US4915775A (en) 1987-07-21 1988-07-21 Apparatus for adjusting initial position of melt surface
DE8888710019T DE3875015T2 (de) 1987-07-21 1988-07-21 Einrichtung zur einstellung der ausgangsposition einer schmelzenoberflaeche.
EP88710019A EP0301998B1 (en) 1987-07-21 1988-07-21 Apparatus for adjusting initial position of melt surface

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62181722A JPS6424089A (en) 1987-07-21 1987-07-21 Device for adjusting initial position of melt surface

Publications (2)

Publication Number Publication Date
JPS6424089A true JPS6424089A (en) 1989-01-26
JPH0559876B2 JPH0559876B2 (enExample) 1993-09-01

Family

ID=16105731

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62181722A Granted JPS6424089A (en) 1987-07-21 1987-07-21 Device for adjusting initial position of melt surface

Country Status (4)

Country Link
US (1) US4915775A (enExample)
EP (1) EP0301998B1 (enExample)
JP (1) JPS6424089A (enExample)
DE (1) DE3875015T2 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8801853B2 (en) 2005-07-22 2014-08-12 Sumco Corporation Mechanism for controlling melt level in single crystal pulling apparatus, method for controlling melt level in single crystal pulling apparatus, mechanism for adjusting melt level in single crystal pulling apparatus and method for adjusting melt level while pulling single crystal
US9587325B2 (en) 2012-02-21 2017-03-07 Shin-Etsu Handotai Co., Ltd. Method for calculating a height position of silicon melt surface, method for pulling silicon single crystal, and silicon single crystal pulling apparatus
JP2017077981A (ja) * 2015-10-19 2017-04-27 信越半導体株式会社 単結晶の製造方法
DE112016004171T5 (de) 2015-10-14 2018-05-24 Shin-Etsu Handotai Co., Ltd. Einkristall-Herstellvorrichtung und Verfahren zum Steuern einer Schmelzenoberflächen-Position
WO2025060139A1 (zh) * 2023-09-21 2025-03-27 中环领先半导体科技股份有限公司 一种控制直拉单晶液面距的方法

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0776144B2 (ja) * 1988-11-21 1995-08-16 信越半導体株式会社 結晶引上ワイヤの偏芯量測定装置
JP2678383B2 (ja) * 1989-05-30 1997-11-17 信越半導体 株式会社 単結晶上装置
JPH0726817B2 (ja) * 1990-07-28 1995-03-29 信越半導体株式会社 結晶径測定装置
JPH0785489B2 (ja) * 1991-02-08 1995-09-13 信越半導体株式会社 単結晶の直径計測方法
EP0911430B1 (en) * 1991-04-26 2003-04-09 Mitsubishi Materials Corporation Single crystal growth method
DE4123336A1 (de) * 1991-07-15 1993-01-21 Leybold Ag Kristallziehverfahren und vorrichtung zu seiner durchfuehrung
US5286461A (en) * 1991-09-20 1994-02-15 Ferrofluidics Corporation Method and apparatus for melt level detection in czochralski crystal growth systems
DE4231162C2 (de) * 1992-09-17 1996-03-14 Wacker Siltronic Halbleitermat Verfahren zur Regelung der Schmelzenhöhe während des Ziehens von Einkristallen
JP2823035B2 (ja) * 1993-02-10 1998-11-11 信越半導体株式会社 半導体単結晶の引上装置及び引上方法
US5582642A (en) * 1995-06-20 1996-12-10 Memc Electronic Materials, Inc. Apparatus and method for adjusting the position of a pull wire of a crystal pulling machine
US5888299A (en) * 1995-12-27 1999-03-30 Shin-Etsu Handotai Co., Ltd. Apparatus for adjusting initial position of melt surface
US6071340A (en) * 1996-02-28 2000-06-06 General Signal Technology Corporation Apparatus for melt-level detection in Czochralski crystal growth systems
JP3758743B2 (ja) * 1996-04-22 2006-03-22 コマツ電子金属株式会社 半導体単結晶製造装置
DE19652543A1 (de) * 1996-12-17 1998-06-18 Wacker Siltronic Halbleitermat Verfahren zur Herstellung eines Silicium-Einkristalls und Heizvorrichtung zur Durchführung des Verfahrens
US5961716A (en) * 1997-12-15 1999-10-05 Seh America, Inc. Diameter and melt measurement method used in automatically controlled crystal growth
US6030451A (en) * 1998-01-12 2000-02-29 Seh America, Inc. Two camera diameter control system with diameter tracking for silicon ingot growth
US6106612A (en) * 1998-06-04 2000-08-22 Seh America Inc. Level detector and method for detecting a surface level of a material in a container
JP5678635B2 (ja) 2010-12-13 2015-03-04 株式会社Sumco シリコン単結晶の製造装置、シリコン単結晶の製造方法
JP6078974B2 (ja) 2012-04-04 2017-02-15 株式会社Sumco シリコン単結晶の製造方法
KR102241310B1 (ko) 2014-09-12 2021-04-16 신에쯔 한도타이 가부시키가이샤 단결정의 제조방법
AT526111B1 (de) 2022-05-05 2024-04-15 Fametec Gmbh Vorrichtung und Verfahren zur Herstellung eines künstlichen Saphir-Einkristalls

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6021893A (ja) * 1983-07-12 1985-02-04 Toshiba Corp 単結晶の製造装置
JPS6186493A (ja) * 1984-10-04 1986-05-01 Toshiba Mach Co Ltd 半導体結晶引上機

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3998598A (en) * 1973-11-23 1976-12-21 Semimetals, Inc. Automatic diameter control for crystal growing facilities
US4207293A (en) * 1974-06-14 1980-06-10 Varian Associates, Inc. Circumferential error signal apparatus for crystal rod pulling
US3980438A (en) * 1975-08-28 1976-09-14 Arthur D. Little, Inc. Apparatus for forming semiconductor crystals of essentially uniform diameter
DE3049376A1 (de) * 1980-12-29 1982-07-29 Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen Verfahren zur herstellung vertikaler pn-uebergaenge beim ziehen von siliciumscheiben aus einer siliciumschmelze
JPS5933554B2 (ja) * 1982-08-19 1984-08-16 株式会社東芝 結晶成長装置
JPH0649631B2 (ja) * 1986-10-29 1994-06-29 信越半導体株式会社 結晶径測定装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6021893A (ja) * 1983-07-12 1985-02-04 Toshiba Corp 単結晶の製造装置
JPS6186493A (ja) * 1984-10-04 1986-05-01 Toshiba Mach Co Ltd 半導体結晶引上機

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8801853B2 (en) 2005-07-22 2014-08-12 Sumco Corporation Mechanism for controlling melt level in single crystal pulling apparatus, method for controlling melt level in single crystal pulling apparatus, mechanism for adjusting melt level in single crystal pulling apparatus and method for adjusting melt level while pulling single crystal
US9587325B2 (en) 2012-02-21 2017-03-07 Shin-Etsu Handotai Co., Ltd. Method for calculating a height position of silicon melt surface, method for pulling silicon single crystal, and silicon single crystal pulling apparatus
DE112013001066B4 (de) 2012-02-21 2021-09-30 Shin-Etsu Handotai Co., Ltd. Verfahren zum Berechnen einer Höhenposition einer Oberfläche einer Siliziumschmelze, Verfahren zum Ziehen eines Silizium-Einkristalls, und Silizium-Einkristall-Ziehvorrichtung
US10233565B2 (en) 2015-10-14 2019-03-19 Shin-Etsu Handotai Co., Ltd. Single-crystal manufacturing apparatus and method for controlling melt surface position
DE112016004171B4 (de) 2015-10-14 2025-02-13 Shin-Etsu Handotai Co., Ltd. Einkristall-Herstellvorrichtung und Verfahren zum Steuern einer Schmelzenoberflächen-Position
DE112016004171T5 (de) 2015-10-14 2018-05-24 Shin-Etsu Handotai Co., Ltd. Einkristall-Herstellvorrichtung und Verfahren zum Steuern einer Schmelzenoberflächen-Position
KR20180063124A (ko) 2015-10-14 2018-06-11 신에쯔 한도타이 가부시키가이샤 단결정 제조장치 및 융액면 위치의 제어방법
WO2017068754A1 (ja) * 2015-10-19 2017-04-27 信越半導体株式会社 単結晶の製造方法
US10584426B2 (en) 2015-10-19 2020-03-10 Shin-Etsu Handotai Co., Ltd. Method for producing single crystal
CN108138353B (zh) * 2015-10-19 2020-07-17 信越半导体株式会社 单晶的制造方法
CN108138353A (zh) * 2015-10-19 2018-06-08 信越半导体株式会社 单晶的制造方法
JP2017077981A (ja) * 2015-10-19 2017-04-27 信越半導体株式会社 単結晶の製造方法
WO2025060139A1 (zh) * 2023-09-21 2025-03-27 中环领先半导体科技股份有限公司 一种控制直拉单晶液面距的方法

Also Published As

Publication number Publication date
DE3875015T2 (de) 1993-03-04
JPH0559876B2 (enExample) 1993-09-01
DE3875015D1 (de) 1992-11-05
EP0301998B1 (en) 1992-09-30
EP0301998A1 (en) 1989-02-01
US4915775A (en) 1990-04-10

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