JPS6423545A - Device for measuring light irradiation - Google Patents

Device for measuring light irradiation

Info

Publication number
JPS6423545A
JPS6423545A JP17970687A JP17970687A JPS6423545A JP S6423545 A JPS6423545 A JP S6423545A JP 17970687 A JP17970687 A JP 17970687A JP 17970687 A JP17970687 A JP 17970687A JP S6423545 A JPS6423545 A JP S6423545A
Authority
JP
Japan
Prior art keywords
optically excited
measured
excitation
electric current
found
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17970687A
Other languages
Japanese (ja)
Other versions
JPH0577334B2 (en
Inventor
Junichi Nishizawa
Shinzo Kasai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP17970687A priority Critical patent/JPS6423545A/en
Publication of JPS6423545A publication Critical patent/JPS6423545A/en
Publication of JPH0577334B2 publication Critical patent/JPH0577334B2/ja
Granted legal-status Critical Current

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  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)

Abstract

PURPOSE:To obtain the information on a transition process of optical excitation by measuring a PHCAP value and, at the same time, by measuring an optically excited electric current. CONSTITUTION:When an n-type conductive GaAs crystal plate is measured in a wavelength range of 0.50-1.60eV, a halogen lamp is used as a light source 1, a grating monochromator is used as a monochromatic light irradiation device 2 and a mirror system to converge the light and to irradiate a specimen 5 is used as an optical system 3. While a PHCAP value is measured, an accurate value of a deep level ET and is density NT are measured with the depth resolution, and an optically excited electric current is measured at a sufficiently low temperature. By this setup, in the case of the excitation from a full and deep donor level to a conduction band, the optically excited electric current can be detected by hnu=EL-ET; in the case of the excitation from a filled band to a vacant and deep donor level after the excitation, the optically excited electric current flows by hnu=Eg-ET. Furthermore, if this current is integrated by using an integrator and an quantity of an electric charge is found, NT can be found. By this setup, the optically excited energy of a deep level formed by a crystal defect and its density can be found; the detailed information on an optically excited process can be obtained.
JP17970687A 1987-07-17 1987-07-17 Device for measuring light irradiation Granted JPS6423545A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17970687A JPS6423545A (en) 1987-07-17 1987-07-17 Device for measuring light irradiation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17970687A JPS6423545A (en) 1987-07-17 1987-07-17 Device for measuring light irradiation

Publications (2)

Publication Number Publication Date
JPS6423545A true JPS6423545A (en) 1989-01-26
JPH0577334B2 JPH0577334B2 (en) 1993-10-26

Family

ID=16070453

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17970687A Granted JPS6423545A (en) 1987-07-17 1987-07-17 Device for measuring light irradiation

Country Status (1)

Country Link
JP (1) JPS6423545A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59114834A (en) * 1982-12-21 1984-07-03 Agency Of Ind Science & Technol Method for measuring deep impurity level or crystal defect level contained in semiconductor device
JPS6034028A (en) * 1983-08-06 1985-02-21 Tokyo Daigaku Adaptive measurement of semiconductor trapping center

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59114834A (en) * 1982-12-21 1984-07-03 Agency Of Ind Science & Technol Method for measuring deep impurity level or crystal defect level contained in semiconductor device
JPS6034028A (en) * 1983-08-06 1985-02-21 Tokyo Daigaku Adaptive measurement of semiconductor trapping center

Also Published As

Publication number Publication date
JPH0577334B2 (en) 1993-10-26

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