JPS642345A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS642345A
JPS642345A JP15828487A JP15828487A JPS642345A JP S642345 A JPS642345 A JP S642345A JP 15828487 A JP15828487 A JP 15828487A JP 15828487 A JP15828487 A JP 15828487A JP S642345 A JPS642345 A JP S642345A
Authority
JP
Japan
Prior art keywords
resistor
bonding pad
pad
films
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15828487A
Other languages
Japanese (ja)
Other versions
JPH012345A (en
Inventor
Takeo Tatematsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15828487A priority Critical patent/JPS642345A/en
Publication of JPH012345A publication Critical patent/JPH012345A/en
Publication of JPS642345A publication Critical patent/JPS642345A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0802—Resistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To contrive an increase in the integration of an IC by a method wherein a polyclystalline Si resistor is provided under a bonding pad to constitute a bonding pad part in a multilayer. CONSTITUTION:A bonding pad part is constituted of a bonding pad 2 consisting of Al, a poly Si resistor Rp, Al wiring layers 6, insulating films 7 and 8, a covering insulating film 9 and a semiconductor substrate 10. Here, the resistor Rp is formed being held between the films 7 and 8 and the films 7 and 8 and the resistor Rp are arranged under the pad 2. Thereby, as the bonding pad part is formed in a multilayer, the gap between the pad 2 and the substrate can be made narrow remarkedly compared to a case where the resistor Rp is arranged in the gap between the pad 2 and the substrate. As a result, a further increase in the density of a semiconductor chip and a further increase in the integration of the chip become possible.
JP15828487A 1987-06-24 1987-06-24 Semiconductor integrated circuit device Pending JPS642345A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15828487A JPS642345A (en) 1987-06-24 1987-06-24 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15828487A JPS642345A (en) 1987-06-24 1987-06-24 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPH012345A JPH012345A (en) 1989-01-06
JPS642345A true JPS642345A (en) 1989-01-06

Family

ID=15668233

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15828487A Pending JPS642345A (en) 1987-06-24 1987-06-24 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS642345A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58162258A (en) * 1982-03-19 1983-09-26 Kao Corp Making method for liquid spice
US6703666B1 (en) * 1999-07-14 2004-03-09 Agere Systems Inc. Thin film resistor device and a method of manufacture therefor
NO333523B1 (en) * 1999-12-23 2013-07-01 Reynolds Metals Co Aluminum alloys with optimum combinations of moldability, corrosion resistance and heat resistance, and their applications in heat exchangers

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58162258A (en) * 1982-03-19 1983-09-26 Kao Corp Making method for liquid spice
JPH0115267B2 (en) * 1982-03-19 1989-03-16 Kao Corp
US6703666B1 (en) * 1999-07-14 2004-03-09 Agere Systems Inc. Thin film resistor device and a method of manufacture therefor
US7276767B2 (en) 1999-07-14 2007-10-02 Agere Systems Inc. Thin film resistor device and a method of manufacture therefor
NO333523B1 (en) * 1999-12-23 2013-07-01 Reynolds Metals Co Aluminum alloys with optimum combinations of moldability, corrosion resistance and heat resistance, and their applications in heat exchangers

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