JPS6422056A - Manufacture of semiconductor integrated circuit - Google Patents
Manufacture of semiconductor integrated circuitInfo
- Publication number
- JPS6422056A JPS6422056A JP62179294A JP17929487A JPS6422056A JP S6422056 A JPS6422056 A JP S6422056A JP 62179294 A JP62179294 A JP 62179294A JP 17929487 A JP17929487 A JP 17929487A JP S6422056 A JPS6422056 A JP S6422056A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- region
- epitaxial layer
- withstanding voltage
- iil
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Element Separation (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To make the chip size small by selectively diffusing impurities of the opposite conductivity types into the surface of the second-layer epitaxial layer to form the collector region of an IIL and the emitter regions of a low withstanding voltage and high withstanding voltage linear transistors, thereby reducing the dedicated area required for element isolation. CONSTITUTION:In the surface of a first-layer epitaxial layer 23 antimony is deposited, and into the region to be applied with element isolation boron ions are implanted. On the whole surface, a second-layer epitaxial layer 27 is stacked, into the surface of which boron ions are implanted. A heat treatment is applied to the whole substrate 21 to upwardly and downwardly drive in an underside isolation region 25 and drive in a base region 28 of an IIL 41 to a predetermined depth. From the second-layer epitaxial layer 27 surface an upper side isolation region 30 is formed to complete the element isolation, and from the second-layer epitaxial layer 27 surface a P-type impurity and an N-type impurity are sequentially diffused to form a high withstanding voltage linear transistor 40 in the region where only a first-layer buried layer 22 is provided, and a low withstanding voltage linear transistor 42 and an IIL 41 in the region where a second-layer buried layer 24 is provided.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62179294A JPH0727970B2 (en) | 1987-07-17 | 1987-07-17 | Method for manufacturing semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62179294A JPH0727970B2 (en) | 1987-07-17 | 1987-07-17 | Method for manufacturing semiconductor integrated circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6422056A true JPS6422056A (en) | 1989-01-25 |
JPH0727970B2 JPH0727970B2 (en) | 1995-03-29 |
Family
ID=16063310
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62179294A Expired - Lifetime JPH0727970B2 (en) | 1987-07-17 | 1987-07-17 | Method for manufacturing semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0727970B2 (en) |
-
1987
- 1987-07-17 JP JP62179294A patent/JPH0727970B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0727970B2 (en) | 1995-03-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5262345A (en) | Complimentary bipolar/CMOS fabrication method | |
EP0395358A3 (en) | Bipolar transistor and manufacturing method thereof | |
US3449643A (en) | Semiconductor integrated circuit device | |
JPS5586151A (en) | Manufacture of semiconductor integrated circuit | |
GB1073551A (en) | Integrated circuit comprising a diode and method of making the same | |
GB1217472A (en) | Integrated circuits | |
JPS5674959A (en) | Semiconductor memroy | |
JPS6422056A (en) | Manufacture of semiconductor integrated circuit | |
JPS6422055A (en) | Manufacture of semiconductor integrated circuit | |
JPS56108255A (en) | Semiconductor integrated circuit | |
JPS55102263A (en) | Semiconductor integrated circuit | |
JPS5539688A (en) | Integrated circuit device of semiconductors | |
JPS54107270A (en) | Semiconductor device and its production | |
JPS55146964A (en) | Manufacture of semiconductor device | |
JPS6425566A (en) | Manufacture of semiconductor integrated circuit | |
JPS57198657A (en) | Semiconductor device | |
ES349367A1 (en) | Improvements in and relating to semiconductor devices | |
JPH0834244B2 (en) | Semiconductor integrated circuit device | |
JPS6437862A (en) | Manufacture of semiconductor integrated circuit | |
JPS5586152A (en) | Manufacture of semiconductor device | |
JPS6435951A (en) | Semiconductor device | |
JPS5710263A (en) | Manufacture of semiconductor device | |
JPS6267855A (en) | Semiconductor integrated injection logic circuit device | |
GB1408627A (en) | Semiconductor devices | |
JPS5779658A (en) | Semiconductor integrated circuit device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term | ||
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080329 Year of fee payment: 13 |