JPS6422056A - Manufacture of semiconductor integrated circuit - Google Patents

Manufacture of semiconductor integrated circuit

Info

Publication number
JPS6422056A
JPS6422056A JP62179294A JP17929487A JPS6422056A JP S6422056 A JPS6422056 A JP S6422056A JP 62179294 A JP62179294 A JP 62179294A JP 17929487 A JP17929487 A JP 17929487A JP S6422056 A JPS6422056 A JP S6422056A
Authority
JP
Japan
Prior art keywords
layer
region
epitaxial layer
withstanding voltage
iil
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62179294A
Other languages
Japanese (ja)
Other versions
JPH0727970B2 (en
Inventor
Toshiyuki Okoda
Teruo Tabata
Yukio Kanetake
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP62179294A priority Critical patent/JPH0727970B2/en
Publication of JPS6422056A publication Critical patent/JPS6422056A/en
Publication of JPH0727970B2 publication Critical patent/JPH0727970B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To make the chip size small by selectively diffusing impurities of the opposite conductivity types into the surface of the second-layer epitaxial layer to form the collector region of an IIL and the emitter regions of a low withstanding voltage and high withstanding voltage linear transistors, thereby reducing the dedicated area required for element isolation. CONSTITUTION:In the surface of a first-layer epitaxial layer 23 antimony is deposited, and into the region to be applied with element isolation boron ions are implanted. On the whole surface, a second-layer epitaxial layer 27 is stacked, into the surface of which boron ions are implanted. A heat treatment is applied to the whole substrate 21 to upwardly and downwardly drive in an underside isolation region 25 and drive in a base region 28 of an IIL 41 to a predetermined depth. From the second-layer epitaxial layer 27 surface an upper side isolation region 30 is formed to complete the element isolation, and from the second-layer epitaxial layer 27 surface a P-type impurity and an N-type impurity are sequentially diffused to form a high withstanding voltage linear transistor 40 in the region where only a first-layer buried layer 22 is provided, and a low withstanding voltage linear transistor 42 and an IIL 41 in the region where a second-layer buried layer 24 is provided.
JP62179294A 1987-07-17 1987-07-17 Method for manufacturing semiconductor integrated circuit Expired - Lifetime JPH0727970B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62179294A JPH0727970B2 (en) 1987-07-17 1987-07-17 Method for manufacturing semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62179294A JPH0727970B2 (en) 1987-07-17 1987-07-17 Method for manufacturing semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS6422056A true JPS6422056A (en) 1989-01-25
JPH0727970B2 JPH0727970B2 (en) 1995-03-29

Family

ID=16063310

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62179294A Expired - Lifetime JPH0727970B2 (en) 1987-07-17 1987-07-17 Method for manufacturing semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPH0727970B2 (en)

Also Published As

Publication number Publication date
JPH0727970B2 (en) 1995-03-29

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