JPS6422025A - Semiconductor manufacturing equipment - Google Patents

Semiconductor manufacturing equipment

Info

Publication number
JPS6422025A
JPS6422025A JP17731787A JP17731787A JPS6422025A JP S6422025 A JPS6422025 A JP S6422025A JP 17731787 A JP17731787 A JP 17731787A JP 17731787 A JP17731787 A JP 17731787A JP S6422025 A JPS6422025 A JP S6422025A
Authority
JP
Japan
Prior art keywords
reaction pipe
reaction
pipe
section
cover
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17731787A
Other languages
Japanese (ja)
Inventor
Noriaki Matsuura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP17731787A priority Critical patent/JPS6422025A/en
Publication of JPS6422025A publication Critical patent/JPS6422025A/en
Pending legal-status Critical Current

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  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To prevent the damage of the end section of a reaction pipe completely when the reaction pipe is exchanged, and to ensure constant sealing properties at all times by making the diameter of an opened end section in the reaction pipe smaller than that of a central section by contraction in a semiconductor production device into which the reaction pipe, one end of which is opened, is inserted. CONSTITUTION:Wafers 4 are charged into a reaction pipe 3, and a cover 5 is closed and the reaction pipe 3 is sealed, thus preventing the intrusion of atmospheric air from a wafer charging port. The wafers 4 are kept at a fixed temperature by controlling the calorific value of a heater section 1, a reaction gas required is introduced from a reaction-gas introducing section 6, and treatment such as oxidizing diffusion is executed. The cover 5 is opened again, and the completely treated wafers 4 are extracted from the reaction pipe 3. The sealing properties of the reaction pipe 3 are ensured by the cover 5 through the treatment, and the diameter of the opening end of the reaction pipe 3 is reduced by contraction. Even when the rear section of the reaction pipe 3 is lifted under the state in which the reaction pipe 3 is drawn to the rear of a device, a contact with a soaking pipe 2 is stopped in a contact on a contracted surface, and the opening end of the reaction pipe 3 is protected so as not to be brought into contact with the soaking pipe 2.
JP17731787A 1987-07-17 1987-07-17 Semiconductor manufacturing equipment Pending JPS6422025A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17731787A JPS6422025A (en) 1987-07-17 1987-07-17 Semiconductor manufacturing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17731787A JPS6422025A (en) 1987-07-17 1987-07-17 Semiconductor manufacturing equipment

Publications (1)

Publication Number Publication Date
JPS6422025A true JPS6422025A (en) 1989-01-25

Family

ID=16028869

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17731787A Pending JPS6422025A (en) 1987-07-17 1987-07-17 Semiconductor manufacturing equipment

Country Status (1)

Country Link
JP (1) JPS6422025A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001319886A (en) * 2000-05-08 2001-11-16 Tokyo Electron Ltd System and method for heat treatment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001319886A (en) * 2000-05-08 2001-11-16 Tokyo Electron Ltd System and method for heat treatment

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