JPS6422025A - Semiconductor manufacturing equipment - Google Patents
Semiconductor manufacturing equipmentInfo
- Publication number
- JPS6422025A JPS6422025A JP17731787A JP17731787A JPS6422025A JP S6422025 A JPS6422025 A JP S6422025A JP 17731787 A JP17731787 A JP 17731787A JP 17731787 A JP17731787 A JP 17731787A JP S6422025 A JPS6422025 A JP S6422025A
- Authority
- JP
- Japan
- Prior art keywords
- reaction pipe
- reaction
- pipe
- section
- cover
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
PURPOSE:To prevent the damage of the end section of a reaction pipe completely when the reaction pipe is exchanged, and to ensure constant sealing properties at all times by making the diameter of an opened end section in the reaction pipe smaller than that of a central section by contraction in a semiconductor production device into which the reaction pipe, one end of which is opened, is inserted. CONSTITUTION:Wafers 4 are charged into a reaction pipe 3, and a cover 5 is closed and the reaction pipe 3 is sealed, thus preventing the intrusion of atmospheric air from a wafer charging port. The wafers 4 are kept at a fixed temperature by controlling the calorific value of a heater section 1, a reaction gas required is introduced from a reaction-gas introducing section 6, and treatment such as oxidizing diffusion is executed. The cover 5 is opened again, and the completely treated wafers 4 are extracted from the reaction pipe 3. The sealing properties of the reaction pipe 3 are ensured by the cover 5 through the treatment, and the diameter of the opening end of the reaction pipe 3 is reduced by contraction. Even when the rear section of the reaction pipe 3 is lifted under the state in which the reaction pipe 3 is drawn to the rear of a device, a contact with a soaking pipe 2 is stopped in a contact on a contracted surface, and the opening end of the reaction pipe 3 is protected so as not to be brought into contact with the soaking pipe 2.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17731787A JPS6422025A (en) | 1987-07-17 | 1987-07-17 | Semiconductor manufacturing equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17731787A JPS6422025A (en) | 1987-07-17 | 1987-07-17 | Semiconductor manufacturing equipment |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6422025A true JPS6422025A (en) | 1989-01-25 |
Family
ID=16028869
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17731787A Pending JPS6422025A (en) | 1987-07-17 | 1987-07-17 | Semiconductor manufacturing equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6422025A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001319886A (en) * | 2000-05-08 | 2001-11-16 | Tokyo Electron Ltd | System and method for heat treatment |
-
1987
- 1987-07-17 JP JP17731787A patent/JPS6422025A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001319886A (en) * | 2000-05-08 | 2001-11-16 | Tokyo Electron Ltd | System and method for heat treatment |
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