KR20010060132A - Semiconductor wafer manufacturing apparatus - Google Patents

Semiconductor wafer manufacturing apparatus Download PDF

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Publication number
KR20010060132A
KR20010060132A KR1019990068255A KR19990068255A KR20010060132A KR 20010060132 A KR20010060132 A KR 20010060132A KR 1019990068255 A KR1019990068255 A KR 1019990068255A KR 19990068255 A KR19990068255 A KR 19990068255A KR 20010060132 A KR20010060132 A KR 20010060132A
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South Korea
Prior art keywords
chamber
load lock
manufacturing apparatus
shuttle
lock chamber
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KR1019990068255A
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Korean (ko)
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김태완
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박종섭
주식회사 하이닉스반도체
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Priority to KR1019990068255A priority Critical patent/KR20010060132A/en
Publication of KR20010060132A publication Critical patent/KR20010060132A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

PURPOSE: A wafer manufacturing apparatus is to use many processes with single equipment by arranging an automatic pressure adjusting valve at a load lock chamber and a shuttle chamber and adjusting a pressure in a chamber independently. CONSTITUTION: A susceptor(21) for heating a wafer is arranged within a process chamber(22). A load lock chamber(24) having a robot therein is disposed at one side of the process chamber. A shuttle chamber(27) is arranged at one side of the load lock chamber. A supporter(26) on which a cassette(25) is mounted is disposed within the shuttle chamber in a rotating and lifting manner. A gas injection tube(28) is arranged above the process chamber whereas a gas exhaust line(31) is arranged below the chamber. An automatic pressure regulating valve(29) and a pump(30) are located in the gas exhaust line. A nitrogen injection tube(32) and an exhaust line(33,34) are arranged in the load lock chamber and the shuttle chamber. An in/out port(37a) is formed at a wall face(37) between the process chamber and the load lock chamber.

Description

반도체 웨이퍼 제조장치{SEMICONDUCTOR WAFER MANUFACTURING APPARATUS}Semiconductor Wafer Manufacturing Equipment {SEMICONDUCTOR WAFER MANUFACTURING APPARATUS}

본 발명은 반도체 웨이퍼 제조장치에 관한 것으로, 특히 하나의 장비에서 급속열처리공정과 불순물 도핑공정을 수행할 수 있도록 하는데 적합한 반도체 웨이퍼 제조장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor wafer manufacturing apparatus, and more particularly, to a semiconductor wafer manufacturing apparatus suitable for enabling rapid thermal processing and impurity doping in one equipment.

도 1은 급속열처리장치인 종래의 RTP(RAPID THERMAL PROCESS)장비를 보인 종단면도로서, 도시된 바와 같이, 종래의 RTP장비는 웨이퍼(W)를 가열하기 위한 서셉터(1)가 내부에 설치되어 있는 프로세스 챔버(2)의 일측에 로봇(3)이 내부에 설치되어 있는 로드락 챔버(4)가 설치되어 있고, 그 로드락 챔버(4)의 일측에는 내부에 카세트(5)가 얹혀지는 받침대(6)가 승강 및 회전가능하게 설치되어 있는 셔틀 챔버(SHUTTLE CHAMBER)(7)가 설치되어 있다.1 is a vertical cross-sectional view showing a conventional RTP (RAPID THERMAL PROCESS) equipment that is a rapid thermal processing apparatus, as shown, the conventional RTP equipment has a susceptor 1 for heating the wafer (W) is installed therein On one side of the process chamber 2, a load lock chamber 4 in which the robot 3 is installed is installed. On one side of the load lock chamber 4, a pedestal on which the cassette 5 is placed. Shuttle chamber 7 is provided in which 6 is rotatably mounted and rotatable.

그리고, 상기 프로세스 챔버(2)의 상측에는 가스주입관(8)이 설치되어 있고, 하측에는 자동압력조절밸브(9)와 펌프(10)가 설치되어 있는 가스 배기라인(11)이 설치되어 있다.In addition, a gas injection pipe 8 is provided above the process chamber 2, and a gas exhaust line 11 having an automatic pressure regulating valve 9 and a pump 10 is provided below. .

상기 로드락 챔버(4)과 셔틀 챔버(7)에도 각각 질소주입관(12)과 배기라인(13)(14)이 각각 설치되어 있고, 그 배기라인(13)(14)에는 각각 펌프(15)(16)가 설치되어 있다.Nitrogen injection pipes 12 and exhaust lines 13 and 14 are respectively installed in the load lock chamber 4 and the shuttle chamber 7, respectively, and the pumps 15 are provided in the exhaust lines 13 and 14, respectively. (16) is installed.

또한, 프로세스 챔버(2)와 로드락 챔버(4) 사이의 벽면(17)에 형성된 출입구(17a)는 슬릿 도어(18)에 의하여 오픈/클로즈 되도록 되어 있다.In addition, the entrance and exit 17a formed in the wall surface 17 between the process chamber 2 and the load lock chamber 4 is opened / closed by the slit door 18.

상기와 같이 구성되어 있는 종래 RTP장비는 프로세스 챔버(2)와 로드락 챔버(4)는 5 torr정도의 저압을 유지하고, 서셉터(1)를 일정온도가 되도록 가열한다.In the conventional RTP apparatus configured as described above, the process chamber 2 and the load lock chamber 4 maintain a low pressure of about 5 torr, and heat the susceptor 1 to a predetermined temperature.

그런 다음, 받침대(6)에 웨이퍼(W)들이 수납된 카세트(5)를 탑재하고, 셔틀 챔버(7)의 압력을 5 torr 정도가 되도록 하고, 받침대(6)에 의하여 로드락 챔버(4)와 셔틀 챔버(7)가 격리되도록 한다.Then, the cassette 5 containing the wafers W is mounted on the pedestal 6, the pressure of the shuttle chamber 7 is about 5 torr, and the load lock chamber 4 is supported by the pedestal 6. And shuttle chamber 7 to be isolated.

상기와 같은 상태에서 로봇(3)이 로드락 챔버(4)에 위치한 카세트(5)에서 웨이퍼(W)를 1장씩 프로세스 챔버(2)의 서셉터(1)에 로딩하고, 질소가스 분위기에서 일정시간동안 어닐링을 실시한다.In the above state, the robot 3 loads the wafers W one by one into the susceptor 1 of the process chamber 2 in the cassette 5 located in the load lock chamber 4, and in a nitrogen gas atmosphere. Annealing is performed for a time.

상기와 같이 어닐링을 실시한 다음에는 꺼내어 로드락 챔버(4)의 쿨링 스테이션(미도시)에서 일정시간동안 식히고, 다시 카세트(5)에 수납하고, 그와 같이 모든 웨이퍼(W)들을 열처리 한 다음에는 받침대(6)가 하강한 후 다시 회전하여 상승한 다음, 동일한 방법으로 웨이퍼(W)들이 어닐링작업을 실시한다.After the annealing as described above, it is taken out and cooled in a cooling station (not shown) of the load lock chamber 4 for a predetermined time, stored in the cassette 5 again, and after all the wafers W are heat treated as such, After the pedestal 6 is lowered and rotated again, the wafers W are annealed in the same manner.

그러나, 상기와 같이 웨이퍼의 급속열처리작업을 하는 RTP장치는 5 torr이하의 저압만을 콘트롤할 수 있도록 질소주입관과 펌프만 구비되어 있어서 이러한 RTP장치를 이용하여 불순물의 도핑공정과 같이 고압에서 작업이 이루어지는 다른 공정을 호환성 있게 진행하는데 제약이 있는 문제점이 있었다.However, as described above, the RTP apparatus for rapid thermal processing of wafers is equipped with only a nitrogen injection pipe and a pump to control only a low pressure of 5 torr or less. There was a problem that there is a limit to the compatibility of different processes to be made.

상기와 같은 문제점을 감안하여 안출한 본 발명의 목적은 하나의 장비에서 여러가지 작업을 실시할 수 있도록 하여 장비의 호환성을 향상시키도록 하는데 적합한반도체 웨이퍼 제조장치를 제공함에 있다.Disclosure of Invention In view of the above problems, an object of the present invention is to provide a semiconductor wafer manufacturing apparatus suitable for improving the compatibility of equipment by performing various operations in one equipment.

도 1은 종래 RTP장비를 보인 종단면도.Figure 1 is a longitudinal cross-sectional view showing a conventional RTP equipment.

도 2는 본 발명 반도체 웨이퍼 제조장치의 구조를 보인 종단면도.Figure 2 is a longitudinal sectional view showing the structure of the semiconductor wafer manufacturing apparatus of the present invention.

도 3은 본 발명에서의 도어구조를 보인 종단면도.Figure 3 is a longitudinal sectional view showing a door structure in the present invention.

* 도면의 주요 부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings

22 : 프로세스 챔버 24 : 로드락 챔버22: process chamber 24: load lock chamber

27 : 셔틀 챔버 37a : 출입구27: shuttle chamber 37a: doorway

40,41 : 자동압력조절밸브 50 : 도어40,41: Automatic pressure regulating valve 50: Door

51 : 에어실린더51: air cylinder

상기와 같은 본 발명의 목적을 달성하기 위하여 프로세스 챔버와 로드락 챔버 및 셔틀 챔버가 연결설치된 반도체 웨이퍼 제조장치에 있어서, 상기 로드락 챔버와 셔틀 챔버에 각각 설치되어, 각각의 압력을 독립적으로 조절하기 위한 자동압력조절밸브를 포함하여서 구성되는 것을 특징으로 하는 반도체 웨이퍼 제조장치가 제공된다.In the semiconductor wafer manufacturing apparatus is connected to the process chamber, the load lock chamber and the shuttle chamber in order to achieve the object of the present invention as described above, respectively installed in the load lock chamber and the shuttle chamber, to control each pressure independently Provided is a semiconductor wafer manufacturing apparatus comprising an automatic pressure regulating valve.

이하, 상기와 같이 구성되어 있는 본 발명 반도체 웨이퍼 제조장치를 첨부된 도면의 실시예를 참고하여 보다 상세히 설명하면 다음과 같다.Hereinafter, the semiconductor wafer manufacturing apparatus of the present invention configured as described above will be described in more detail with reference to embodiments of the accompanying drawings.

도 2는 본 발명 반도체 웨이퍼 제조장치의 구조를 보인 종단면도로서, 도시된 바와 같이, 본 발명 반도체 웨이퍼 제조장치는 웨이퍼(W)를 가열하기 위한 서셉터(21)가 내부에 설치되어 있는 프로세스 챔버(22)의 일측에 로봇(23)이 내부에 설치되어 있는 로드락 챔버(24)가 설치되어 있고, 그 로드락 챔버(24)의 일측에는 내부에 카세트(25)가 얹혀지는 받침대(26)가 승강 및 회전가능하게 설치되어 있는 셔틀 챔버(SHUTTLE CHAMBER)(27)가 설치되어 있다.FIG. 2 is a longitudinal sectional view showing the structure of the semiconductor wafer manufacturing apparatus of the present invention. As shown in the drawing, the semiconductor wafer manufacturing apparatus of the present invention has a process chamber in which a susceptor 21 for heating the wafer W is provided. The load lock chamber 24 in which the robot 23 is provided inside is provided in one side of the 22, and the base 26 in which the cassette 25 is mounted in one side of the load lock chamber 24 is provided. Shuttle chamber (27) is installed to which elevating and rotating is possible.

그리고, 상기 프로세스 챔버(22)의 상측에는 가스주입관(28)이 설치되어 있고, 하측에는 자동압력조절밸브(29)와 펌프(30)가 설치되어 있는 가스 배기라인(31)이 설치되어 있다.In addition, a gas injection pipe 28 is provided above the process chamber 22, and a gas exhaust line 31 is provided below the automatic pressure regulating valve 29 and the pump 30. .

상기 로드락 챔버(24)과 셔틀 챔버(27)에도 각각 질소주입관(32)과 배기라인(33)(34)이 각각 설치되어 있고, 그 배기라인(33)(34)에는 각각펌프(35)(36)와 자동압력조절밸브(40)(41)가 설치되어 있다.Nitrogen injection pipes 32 and exhaust lines 33 and 34 are respectively installed in the load lock chamber 24 and the shuttle chamber 27, respectively, and the pumps 35 are respectively provided in the exhaust lines 33 and 34. 36 and automatic pressure regulating valves 40 and 41 are provided.

또한, 프로세스 챔버(22)와 로드락 챔버(24) 사이의 벽면(37)에 형성된 출입구(37a)는 도어(50)가 에어실린더(51)에 의하여 여닫이 식으로 오픈/클로즈 되도록 되어 있다.In addition, the entrance and exit 37a formed in the wall surface 37 between the process chamber 22 and the load lock chamber 24 is such that the door 50 is opened / closed by the air cylinder 51.

상기와 같이 구성되어 있는 본 발명의 반도체 웨이퍼 제조장치는 프로세스 챔버(22)와 로드락 챔버(24)는 5~160 torr정도로 유지하고, 서셉터(21)를 일정온도가 되도록 가열한 다음, 받침대(26)에 웨이퍼(W)들이 수납된 카세트(25)를 탑재한다.In the semiconductor wafer manufacturing apparatus of the present invention configured as described above, the process chamber 22 and the load lock chamber 24 are maintained at about 5 to 160 torr, and the susceptor 21 is heated to a constant temperature, and then a pedestal. The cassette 25 in which the wafers W are accommodated is mounted on the 26.

그런 다음, 셔틀 챔버(27)와 로드락 챔버(24)의 압력이 동일해지면 받침대(26)에 의하여 로드락 챔버(24)와 셔틀 챔버(27)가 격리되도록 하고, 로봇(23)이 로드락 챔버(24)에 위치한 카세트(25)에서 웨이퍼(W)를 1장씩 프로세스 챔버(22)의 서셉터(21)에 로딩하고, 가스주입관(28)을 통하여 공정가스(PH3)를 주입하면서 일정시간동안 도핑작업을 실시한다.Then, when the pressures of the shuttle chamber 27 and the load lock chamber 24 become equal, the load lock chamber 24 and the shuttle chamber 27 are isolated by the pedestal 26, and the robot 23 load locks. In the cassette 25 located in the chamber 24, the wafers W are loaded one by one into the susceptor 21 of the process chamber 22, and the process gas PH3 is injected through the gas injection pipe 28. Doping for a while.

상기와 같이 도핑작업을 실시한 다음에는 꺼내어 로드락 챔버(24)의 쿨링 스테이션(미도시)에서 일정시간동안 식히고, 다시 카세트(25)에 수납하며, 그와 같이 모든 웨이퍼(W)들이 카세트(25)에 수납되면 받침대(26)가 하강한 후 다시 회전하여 상승한 다음, 동일한 방법으로 웨이퍼(W)들의 도핑작업을 실시한다.After the doping operation as described above, it is taken out and cooled in a cooling station (not shown) of the load lock chamber 24 for a predetermined time, and stored in the cassette 25 again. As such, all wafers W are stored in the cassette 25 ), The pedestal 26 descends and then rotates again to rise, and then doping the wafers W in the same manner.

상기와 같이 작업이 진행되는 동안 도어(50)은 에어실린더(51)에 의하여 여닫이식으로 열고 닫기 때문에 프로세스 챔버(22)와 로드락 챔버(24)가 큰 압력차가 발생되어도 기밀이 유지된다.Since the door 50 is opened and closed by the air cylinder 51 while the operation is in progress as described above, airtightness is maintained even when a large pressure difference is generated between the process chamber 22 and the load lock chamber 24.

이상에서 상세히 설명한 바와 같이, 본 발명 반도체 웨이퍼 제조장치는 로드락 챔버와 셔틀 챔버에 자동압력조절밸브를 설치하여 각각의 챔버 압력을 독립적으로 조절함으로써 하나의 장비로 여러가지의 공정을 호환성있게 이용할 수 있다.As described in detail above, the semiconductor wafer manufacturing apparatus of the present invention can be installed in an automatic pressure control valve in the load lock chamber and the shuttle chamber to independently control the pressure of each chamber to be able to use a variety of processes in one equipment compatible. .

또한, 도어를 에어실린더에 의하여 여닫이식으로 열고 닫을 수 있도록 하여 챔버간의 큰 압력차가 발생되어도 압력의 누설없이 작업을 진행할 수 있는 효과가 있다.In addition, the door can be opened and closed by an air cylinder, thereby enabling the operation to proceed without leakage of pressure even when a large pressure difference is generated between the chambers.

Claims (2)

프로세스 챔버와 로드락 챔버 및 셔틀 챔버가 연결설치된 반도체 웨이퍼 제조장치에 있어서, 상기 로드락 챔버와 셔틀 챔버에 각각 설치되어 각각의 압력을 독립적으로 조절하기 위한 자동압력조절밸브를 포함하여서 구성되는 것을 특징으로 하는 반도체 웨이퍼 제조장치.A semiconductor wafer manufacturing apparatus in which a process chamber, a load lock chamber, and a shuttle chamber are connected to each other, wherein each of the load chamber and the shuttle chamber is provided to include an automatic pressure regulating valve for independently controlling the respective pressures. A semiconductor wafer manufacturing apparatus. 제 1항에 있어서, 상기 프로세스 챔버의 벽면에 형성된 출입구에 설치되는 도어는 에어실린더에 의하여 여닫이식으로 열로 닫을 수 있도록 한 것을 특징으로 하는 반도체 웨이퍼 제조장치.The semiconductor wafer manufacturing apparatus of claim 1, wherein a door installed at an entrance formed in a wall of the process chamber is opened and closed by an air cylinder.
KR1019990068255A 1999-12-31 1999-12-31 Semiconductor wafer manufacturing apparatus KR20010060132A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100663342B1 (en) * 2000-11-22 2007-01-02 삼성전자주식회사 Dry etching equipment used to manufacture a semiconductor device
KR100846995B1 (en) * 2003-12-23 2008-07-16 동부일렉트로닉스 주식회사 Door system of stripper for manufacturing semiconductor device
CN107393853A (en) * 2017-06-23 2017-11-24 上海集成电路研发中心有限公司 A kind of postposition type front equipment end loading module

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100663342B1 (en) * 2000-11-22 2007-01-02 삼성전자주식회사 Dry etching equipment used to manufacture a semiconductor device
KR100846995B1 (en) * 2003-12-23 2008-07-16 동부일렉트로닉스 주식회사 Door system of stripper for manufacturing semiconductor device
CN107393853A (en) * 2017-06-23 2017-11-24 上海集成电路研发中心有限公司 A kind of postposition type front equipment end loading module
CN107393853B (en) * 2017-06-23 2019-12-13 上海集成电路研发中心有限公司 Rear-mounted equipment front end loading module

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