JPS6420656A - Cold shield for infrared ray detector - Google Patents

Cold shield for infrared ray detector

Info

Publication number
JPS6420656A
JPS6420656A JP62177597A JP17759787A JPS6420656A JP S6420656 A JPS6420656 A JP S6420656A JP 62177597 A JP62177597 A JP 62177597A JP 17759787 A JP17759787 A JP 17759787A JP S6420656 A JPS6420656 A JP S6420656A
Authority
JP
Japan
Prior art keywords
infrared ray
layer
opening
layer structure
cold shield
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62177597A
Other languages
Japanese (ja)
Other versions
JPH0549170B2 (en
Inventor
Toru Maekawa
Hiroshi Takigawa
Shigeki Hamashima
Tomoshi Ueda
Tetsuya Kawachi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP62177597A priority Critical patent/JPS6420656A/en
Publication of JPS6420656A publication Critical patent/JPS6420656A/en
Publication of JPH0549170B2 publication Critical patent/JPH0549170B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE:To obtain a cold shield for an infrared ray detector which is not isolated from a dielectric layer and has high reliability by simple manufacturing steps by laminating an infrared ray absorber layer and an infrared ray reflector layer, each having an opening, on both side faces of an infrared ray transmitting base material. CONSTITUTION:After dielectric layers 22 are formed by depositing on both upper and lower faces of an infrared ray transmitting substrate 21, a photoresist film having the same area as that of an opening 23 on the layer 22 is formed on the forming region of the opening 23, metal films of an infrared ray absorber layer 24, an infrared ray reflector layer 25 and an infrared ray absorber layer 24 of 3-layer structure are formed by depositing thereon, and the pattern-formed photoresist film is removed to remove the metal film of the 3-layer structure. After the forming region of an opening 26 is coated with a photoresist having the same area as that of the opening 26 under the layer 22, an infrared ray absorber layer 24 and an infrared ray reflector layer 25 of 2-layer structure are formed thereon, and the photoresist film is removed to remove the metal film of the 2-layer structure. Thus, it can prevent them from exfoliating from the dielectric layer.
JP62177597A 1987-07-15 1987-07-15 Cold shield for infrared ray detector Granted JPS6420656A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62177597A JPS6420656A (en) 1987-07-15 1987-07-15 Cold shield for infrared ray detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62177597A JPS6420656A (en) 1987-07-15 1987-07-15 Cold shield for infrared ray detector

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP4205366A Division JPH05231928A (en) 1992-07-31 1992-07-31 Cold shield for infrared detector

Publications (2)

Publication Number Publication Date
JPS6420656A true JPS6420656A (en) 1989-01-24
JPH0549170B2 JPH0549170B2 (en) 1993-07-23

Family

ID=16033778

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62177597A Granted JPS6420656A (en) 1987-07-15 1987-07-15 Cold shield for infrared ray detector

Country Status (1)

Country Link
JP (1) JPS6420656A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05231928A (en) * 1992-07-31 1993-09-07 Fujitsu Ltd Cold shield for infrared detector
JP2008544263A (en) * 2005-06-27 2008-12-04 エイチエル−プラナー・テクニク・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング Electromagnetic wave detection device and method for manufacturing such a device
JP2014115244A (en) * 2012-12-12 2014-06-26 Tdk Corp Infrared detector
JP2014142644A (en) * 2014-02-12 2014-08-07 Semiconductor Energy Lab Co Ltd Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05231928A (en) * 1992-07-31 1993-09-07 Fujitsu Ltd Cold shield for infrared detector
JP2008544263A (en) * 2005-06-27 2008-12-04 エイチエル−プラナー・テクニク・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング Electromagnetic wave detection device and method for manufacturing such a device
JP2014115244A (en) * 2012-12-12 2014-06-26 Tdk Corp Infrared detector
JP2014142644A (en) * 2014-02-12 2014-08-07 Semiconductor Energy Lab Co Ltd Semiconductor device

Also Published As

Publication number Publication date
JPH0549170B2 (en) 1993-07-23

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