JPS57181141A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57181141A
JPS57181141A JP6591781A JP6591781A JPS57181141A JP S57181141 A JPS57181141 A JP S57181141A JP 6591781 A JP6591781 A JP 6591781A JP 6591781 A JP6591781 A JP 6591781A JP S57181141 A JPS57181141 A JP S57181141A
Authority
JP
Japan
Prior art keywords
layer
wiring
layers
bored
reach
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6591781A
Other languages
Japanese (ja)
Inventor
Shohei Shima
Takahiko Moriya
Iwao Higashinakagaha
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP6591781A priority Critical patent/JPS57181141A/en
Publication of JPS57181141A publication Critical patent/JPS57181141A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To decrease wiring area occupancy and increase wiring density, by providing a connection where over two metal layers of multilayer wiring layer are connected to a diffusion layer of semiconductor base directly. CONSTITUTION:Diffusion layers 421, 422 are provided on a semiconductor substrate 41. An insulation film 43 is formed on the whole surface. A contact hole is bored to reach the layer 421. The first wiring layers 451, 452 of Al are provided, and an interlayer insulation layer 46 is formed. A contact hole is bored to reach the layer 422, and the second wiring layers 491, 492 are formed. This prevents through-hole numbers from increasing unnecessarily. The wiring density can be increased without influencing the element integrity.
JP6591781A 1981-04-30 1981-04-30 Semiconductor device Pending JPS57181141A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6591781A JPS57181141A (en) 1981-04-30 1981-04-30 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6591781A JPS57181141A (en) 1981-04-30 1981-04-30 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57181141A true JPS57181141A (en) 1982-11-08

Family

ID=13300797

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6591781A Pending JPS57181141A (en) 1981-04-30 1981-04-30 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57181141A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61102047A (en) * 1984-10-25 1986-05-20 Nec Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61102047A (en) * 1984-10-25 1986-05-20 Nec Corp Semiconductor device

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