JPS6419717A - Vapor growth method for semiconductor layer containing arsenic - Google Patents
Vapor growth method for semiconductor layer containing arsenicInfo
- Publication number
- JPS6419717A JPS6419717A JP17611987A JP17611987A JPS6419717A JP S6419717 A JPS6419717 A JP S6419717A JP 17611987 A JP17611987 A JP 17611987A JP 17611987 A JP17611987 A JP 17611987A JP S6419717 A JPS6419717 A JP S6419717A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- vapor growth
- arsenic
- temperature
- fines
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To decrease the defects of an epitaxial substrate resulting from the adhesion of the fines of arsenic by charging the substrate into a vapor growth furnace and holding the substrate for a fixed time at a temperature higher than a vapor growth temperature while the vapor growth furnace is supplied with a protective gas including an arsenic compound before vapor growth. CONSTITUTION:When a single-crystal substrate 1 consisting of gallium arsenide, etc., is charged into a vapor growth pipe 11, the fines 4 of arsenic adhering on the inwall of the vapor growth pipe 11 fall and adhere onto the substrate 1, and an opening flange 14 is closed by a cap 15 as they are. A gas in the vapor growth pipe 11 is replaced completely, and a supporter 2 is heated by a high-frequency coil 16 and the temperature of the substrate 1 is elevated at a specified rate. When the temperature of the substrate reaches approximately 300 deg.C, a protective gas in which arsine gas from a bomb 31 is mixed with a carrier gas is fed into the vapor growth pipe 11, and the sublimation of an arsenic section contained in the substrate 1 is prevented. The temperature of the substrate 1 is raised to 800 deg.C, and the fines of arsenic adhering on the substrate 1 are removed by sublimation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17611987A JPS6419717A (en) | 1987-07-15 | 1987-07-15 | Vapor growth method for semiconductor layer containing arsenic |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17611987A JPS6419717A (en) | 1987-07-15 | 1987-07-15 | Vapor growth method for semiconductor layer containing arsenic |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6419717A true JPS6419717A (en) | 1989-01-23 |
Family
ID=16008011
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17611987A Pending JPS6419717A (en) | 1987-07-15 | 1987-07-15 | Vapor growth method for semiconductor layer containing arsenic |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6419717A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007032180A1 (en) * | 2005-09-12 | 2007-03-22 | Shin-Etsu Handotai Co., Ltd. | Process for producing epitaxial wafer and epitaxial wafer produced therefrom |
-
1987
- 1987-07-15 JP JP17611987A patent/JPS6419717A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007032180A1 (en) * | 2005-09-12 | 2007-03-22 | Shin-Etsu Handotai Co., Ltd. | Process for producing epitaxial wafer and epitaxial wafer produced therefrom |
| JP2007080958A (en) * | 2005-09-12 | 2007-03-29 | Shin Etsu Handotai Co Ltd | Method of manufacturing epitaxial wafer and epitaxial wafer manufactured therewith |
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