JPS6419614A - Thin film type superconductor - Google Patents
Thin film type superconductorInfo
- Publication number
- JPS6419614A JPS6419614A JP62175161A JP17516187A JPS6419614A JP S6419614 A JPS6419614 A JP S6419614A JP 62175161 A JP62175161 A JP 62175161A JP 17516187 A JP17516187 A JP 17516187A JP S6419614 A JPS6419614 A JP S6419614A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- sputtering
- film
- thin film
- film type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002887 superconductor Substances 0.000 title abstract 4
- 239000010409 thin film Substances 0.000 title abstract 3
- 239000007789 gas Substances 0.000 abstract 8
- 229910052786 argon Inorganic materials 0.000 abstract 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 4
- 239000010408 film Substances 0.000 abstract 4
- 150000001875 compounds Chemical class 0.000 abstract 3
- 238000004544 sputter deposition Methods 0.000 abstract 3
- 239000000203 mixture Substances 0.000 abstract 2
- 238000002360 preparation method Methods 0.000 abstract 2
- 238000005245 sintering Methods 0.000 abstract 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 abstract 1
- 229910052692 Dysprosium Inorganic materials 0.000 abstract 1
- 229910052691 Erbium Inorganic materials 0.000 abstract 1
- 229910052688 Gadolinium Inorganic materials 0.000 abstract 1
- 229910052689 Holmium Inorganic materials 0.000 abstract 1
- 229910052765 Lutetium Inorganic materials 0.000 abstract 1
- 229910052775 Thulium Inorganic materials 0.000 abstract 1
- 229910052769 Ytterbium Inorganic materials 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 229910001882 dioxygen Inorganic materials 0.000 abstract 1
- 125000001153 fluoro group Chemical group F* 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 125000004430 oxygen atom Chemical group O* 0.000 abstract 1
- 229910052706 scandium Inorganic materials 0.000 abstract 1
- 238000005477 sputtering target Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 229910052727 yttrium Inorganic materials 0.000 abstract 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Superconductors And Manufacturing Methods Therefor (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
PURPOSE:To provide a thin film type superconductor having a superconductivity transfer temp. Tc in the same degree as ceramics and with improved stability by preparing the superconductor with a specific sintering as target by means of sputtering in mixture gas atmosphere in which fluoric compound gas is added to argon or argon plus oxygen gas. CONSTITUTION:As atmospheric gas for preparation of a superconductive film by sputtering process, a mixture of fluoric compound gas and Ar or Ar+O2 gas is used, and a film is formed by using a sintering of MBa2Cu3O7-delta (0<delta<1) as sputtering target, where M includes at least one of Y, Lu, Yb, Tm, Er, Ho, Dy, Gd, Sc. As the atmospheric gas for preparation of sputtering film of oxide, fluoric compound gas is added to Ar or Ar+O2 gas, and thereby part of the positions to be occupied by oxygen atoms in a crystal of oxide is substituted by F atoms to accomplish enhancement of Tc of the film and improvement of stability. This enhances Tc of the thin film type superconductor to a one near sintered substance, and the stability is also improved.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62175161A JPS6419614A (en) | 1987-07-14 | 1987-07-14 | Thin film type superconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62175161A JPS6419614A (en) | 1987-07-14 | 1987-07-14 | Thin film type superconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6419614A true JPS6419614A (en) | 1989-01-23 |
Family
ID=15991328
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62175161A Pending JPS6419614A (en) | 1987-07-14 | 1987-07-14 | Thin film type superconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6419614A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01176217A (en) * | 1987-12-29 | 1989-07-12 | Sumitomo Electric Ind Ltd | Production of superconducting thin film of compound oxide |
-
1987
- 1987-07-14 JP JP62175161A patent/JPS6419614A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01176217A (en) * | 1987-12-29 | 1989-07-12 | Sumitomo Electric Ind Ltd | Production of superconducting thin film of compound oxide |
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