JPS6450579A - Manufacture of superconducting thin film - Google Patents

Manufacture of superconducting thin film

Info

Publication number
JPS6450579A
JPS6450579A JP62208648A JP20864887A JPS6450579A JP S6450579 A JPS6450579 A JP S6450579A JP 62208648 A JP62208648 A JP 62208648A JP 20864887 A JP20864887 A JP 20864887A JP S6450579 A JPS6450579 A JP S6450579A
Authority
JP
Japan
Prior art keywords
substrate
thin film
cuo
target
shall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62208648A
Other languages
Japanese (ja)
Inventor
Ichiro Ueda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62208648A priority Critical patent/JPS6450579A/en
Publication of JPS6450579A publication Critical patent/JPS6450579A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • H10N60/0268Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0408Processes for depositing or forming copper oxide superconductor layers by sputtering
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • H10N60/0268Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0576Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
    • H10N60/0604Monocrystalline substrates, e.g. epitaxial growth

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To enable a superconducting thin film low permittivity to be formed in parallel with of a substrate surface by a method wherein a Y2O3-BaO-CUO superconductor is formed using MgO cleaved in a face 100 as the substrate and then the superconductor is heat treated at a specified temperature. CONSTITUTION:A thin film of Y2O3-BaO-CUO oxide is formed on a magnesia single crystal substrate cleaved in a face 100 and then heat treated at 800-1000 deg.C to orient in the crystalline direction in low electric resistance in parallel with the substrate. For example, said thin film is formed by RF magnetron sputtering process while a target is composed of Y0.4Ba0.6CuO3-delta. The applicable target is manufactured by blending and mixing specified amount of Y2O3, BaCO3, CuO as materials and after baking them at 900 deg.C for 12 hours in the air, crushed and mixed with one another again to be pressed down at the pressure of 200kg/cm<2>. Furthermore, the sputtering gas shall be mixed with 90% argon and 10% oxygen; the distance between the substrate and the target shall be 8 cm; and the substrate temperature shall be 600 deg.C.
JP62208648A 1987-08-21 1987-08-21 Manufacture of superconducting thin film Pending JPS6450579A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62208648A JPS6450579A (en) 1987-08-21 1987-08-21 Manufacture of superconducting thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62208648A JPS6450579A (en) 1987-08-21 1987-08-21 Manufacture of superconducting thin film

Publications (1)

Publication Number Publication Date
JPS6450579A true JPS6450579A (en) 1989-02-27

Family

ID=16559728

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62208648A Pending JPS6450579A (en) 1987-08-21 1987-08-21 Manufacture of superconducting thin film

Country Status (1)

Country Link
JP (1) JPS6450579A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6454611A (en) * 1987-08-24 1989-03-02 Mitsubishi Electric Corp Superconductive wire
JPS6465715A (en) * 1987-09-04 1989-03-13 Furukawa Electric Co Ltd Manufacture of superconductor molding

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6454611A (en) * 1987-08-24 1989-03-02 Mitsubishi Electric Corp Superconductive wire
JPS6465715A (en) * 1987-09-04 1989-03-13 Furukawa Electric Co Ltd Manufacture of superconductor molding

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