JPS6450579A - Manufacture of superconducting thin film - Google Patents
Manufacture of superconducting thin filmInfo
- Publication number
- JPS6450579A JPS6450579A JP62208648A JP20864887A JPS6450579A JP S6450579 A JPS6450579 A JP S6450579A JP 62208648 A JP62208648 A JP 62208648A JP 20864887 A JP20864887 A JP 20864887A JP S6450579 A JPS6450579 A JP S6450579A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thin film
- cuo
- target
- shall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 6
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 abstract 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 2
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 abstract 2
- 239000000395 magnesium oxide Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 238000002156 mixing Methods 0.000 abstract 2
- 239000002887 superconductor Substances 0.000 abstract 2
- 229910052786 argon Inorganic materials 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 238000001755 magnetron sputter deposition Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0408—Processes for depositing or forming copper oxide superconductor layers by sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
- H10N60/0604—Monocrystalline substrates, e.g. epitaxial growth
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
Abstract
PURPOSE:To enable a superconducting thin film low permittivity to be formed in parallel with of a substrate surface by a method wherein a Y2O3-BaO-CUO superconductor is formed using MgO cleaved in a face 100 as the substrate and then the superconductor is heat treated at a specified temperature. CONSTITUTION:A thin film of Y2O3-BaO-CUO oxide is formed on a magnesia single crystal substrate cleaved in a face 100 and then heat treated at 800-1000 deg.C to orient in the crystalline direction in low electric resistance in parallel with the substrate. For example, said thin film is formed by RF magnetron sputtering process while a target is composed of Y0.4Ba0.6CuO3-delta. The applicable target is manufactured by blending and mixing specified amount of Y2O3, BaCO3, CuO as materials and after baking them at 900 deg.C for 12 hours in the air, crushed and mixed with one another again to be pressed down at the pressure of 200kg/cm<2>. Furthermore, the sputtering gas shall be mixed with 90% argon and 10% oxygen; the distance between the substrate and the target shall be 8 cm; and the substrate temperature shall be 600 deg.C.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62208648A JPS6450579A (en) | 1987-08-21 | 1987-08-21 | Manufacture of superconducting thin film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62208648A JPS6450579A (en) | 1987-08-21 | 1987-08-21 | Manufacture of superconducting thin film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6450579A true JPS6450579A (en) | 1989-02-27 |
Family
ID=16559728
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62208648A Pending JPS6450579A (en) | 1987-08-21 | 1987-08-21 | Manufacture of superconducting thin film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6450579A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6454611A (en) * | 1987-08-24 | 1989-03-02 | Mitsubishi Electric Corp | Superconductive wire |
JPS6465715A (en) * | 1987-09-04 | 1989-03-13 | Furukawa Electric Co Ltd | Manufacture of superconductor molding |
-
1987
- 1987-08-21 JP JP62208648A patent/JPS6450579A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6454611A (en) * | 1987-08-24 | 1989-03-02 | Mitsubishi Electric Corp | Superconductive wire |
JPS6465715A (en) * | 1987-09-04 | 1989-03-13 | Furukawa Electric Co Ltd | Manufacture of superconductor molding |
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