JPS6417447A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6417447A
JPS6417447A JP62173213A JP17321387A JPS6417447A JP S6417447 A JPS6417447 A JP S6417447A JP 62173213 A JP62173213 A JP 62173213A JP 17321387 A JP17321387 A JP 17321387A JP S6417447 A JPS6417447 A JP S6417447A
Authority
JP
Japan
Prior art keywords
semiconductor integrated
integrated circuit
magnetic flux
outside
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62173213A
Other languages
Japanese (ja)
Inventor
Seiji Onaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62173213A priority Critical patent/JPS6417447A/en
Publication of JPS6417447A publication Critical patent/JPS6417447A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)

Abstract

PURPOSE:To prevent a semiconductor integrated circuit from malfunctioning and being broken due to a magnetic flux applied from outside, by forming a magnetic shielding film on a surface of a semiconductor integrated circuit with an insulating film in between or on the rear of the circuit. CONSTITUTION:Magnetic shielding films 8, 9 are formed on a surface of a semiconductor integrated circuit with an insulating film 7 in between or on a rear of the circuit. The shielding films 8, 9 are formed of superconducting films of e.g., (La, Ba)2CuO4. Even if a magnetic flux is applied from outside, no current is induced on a superconducting wiring 6 because the magnetic flux is interrupted by a Meissner effect of the shielding films 8, 9. Hence the semiconductor integrated circuit can be prevented from malfunctioning and being broken due to the magnetic flux applied from outside.
JP62173213A 1987-07-10 1987-07-10 Semiconductor device Pending JPS6417447A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62173213A JPS6417447A (en) 1987-07-10 1987-07-10 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62173213A JPS6417447A (en) 1987-07-10 1987-07-10 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6417447A true JPS6417447A (en) 1989-01-20

Family

ID=15956221

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62173213A Pending JPS6417447A (en) 1987-07-10 1987-07-10 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6417447A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01218045A (en) * 1988-02-26 1989-08-31 Nec Corp Semiconductor device
JPH02132997U (en) * 1989-04-12 1990-11-05

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01218045A (en) * 1988-02-26 1989-08-31 Nec Corp Semiconductor device
JPH02132997U (en) * 1989-04-12 1990-11-05

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