JPS6415987A - Photocoupler - Google Patents

Photocoupler

Info

Publication number
JPS6415987A
JPS6415987A JP17221487A JP17221487A JPS6415987A JP S6415987 A JPS6415987 A JP S6415987A JP 17221487 A JP17221487 A JP 17221487A JP 17221487 A JP17221487 A JP 17221487A JP S6415987 A JPS6415987 A JP S6415987A
Authority
JP
Japan
Prior art keywords
film
stuck
emitting diode
light emitting
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17221487A
Other languages
Japanese (ja)
Inventor
Hiroshi Fujioka
Kanetake Takasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17221487A priority Critical patent/JPS6415987A/en
Publication of JPS6415987A publication Critical patent/JPS6415987A/en
Pending legal-status Critical Current

Links

Landscapes

  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

PURPOSE:To enable the highly accurate alignment, and facilitate the high density integration, by constituting an optical isolator type photocoupler wherein a light emitting diode composed of amorphous silicon carbide is stacked on a photo transistor via a transparent insulating film. CONSTITUTION:Since a phototransistor 10 part is identical to a bipolar silicon transistor, it can be completed by defining the respective regions of collector, base and emitter, and forming the respective electrodes 2E, 3E and 4E. Instead of coating with an insulative cover film, a transparent resin film 20, which transmits a light, is stuck, and silicon resin, e.g., is used for the above resin film 20. In order to form a light emitting diode 30 part, an ITO film 31 is stuck by sputtering method, and then an amorphous carbide film is grown by plasma vapor growth method, wherein a substrate is heated at 180 deg.C, reaction gas is introduced at a reduced pressure degree of about 0.4 Torr, and high frequency electric power of 0.1watt/cm<2> is applied for the growth.
JP17221487A 1987-07-09 1987-07-09 Photocoupler Pending JPS6415987A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17221487A JPS6415987A (en) 1987-07-09 1987-07-09 Photocoupler

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17221487A JPS6415987A (en) 1987-07-09 1987-07-09 Photocoupler

Publications (1)

Publication Number Publication Date
JPS6415987A true JPS6415987A (en) 1989-01-19

Family

ID=15937710

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17221487A Pending JPS6415987A (en) 1987-07-09 1987-07-09 Photocoupler

Country Status (1)

Country Link
JP (1) JPS6415987A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6025610A (en) * 1997-01-23 2000-02-15 Nec Corporation Solid relay and method of producing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6025610A (en) * 1997-01-23 2000-02-15 Nec Corporation Solid relay and method of producing the same

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