JPS6415980A - Field-effect transistor device and manufacture thereof - Google Patents

Field-effect transistor device and manufacture thereof

Info

Publication number
JPS6415980A
JPS6415980A JP17099787A JP17099787A JPS6415980A JP S6415980 A JPS6415980 A JP S6415980A JP 17099787 A JP17099787 A JP 17099787A JP 17099787 A JP17099787 A JP 17099787A JP S6415980 A JPS6415980 A JP S6415980A
Authority
JP
Japan
Prior art keywords
polycrystal silicon
drain region
source
high concentration
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17099787A
Other languages
Japanese (ja)
Inventor
Hideo Honma
Kazue Sato
Yutaka Misawa
Naohiro Monma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP17099787A priority Critical patent/JPS6415980A/en
Publication of JPS6415980A publication Critical patent/JPS6415980A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To enable the sufficient miniaturization, and the remarkable reduction of junction capacitance between a source/drain region and a substrate, by arranging the source/drain region of a MOSFET on the side surface almost perpendicular to the main surface of a semiconductor substrate. CONSTITUTION:By etching polycrystal silicon 22, 22A and 13, polycrystal silicon 22A, 13 containing As of high concentration are selectively etched and eliminated in a self alignment manner, and a polycrystal silicon film 22B is formed, which has a shape isolated on an SiO2 film 11. By applying the SiO2 film formed on the upper surface of a substrate 10B to a mask, phosphorus (P) ion 23 is implanted in the polycrystal silicon film 22, and heat-treating is performed. By this process, a low concentration source/drain region 24 composed of a low concentration n-type single crystal semiconductor layer is formed. Then As ion 23' is implanted, and heat-treating is performed. At the same time as forming a high concentration n-type source/drain region 25 composed of a high concentration n-type single crystal semiconductor layer, the film 22B is turned into a high concentration n-type polycrystal silicon film 22c.
JP17099787A 1987-07-10 1987-07-10 Field-effect transistor device and manufacture thereof Pending JPS6415980A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17099787A JPS6415980A (en) 1987-07-10 1987-07-10 Field-effect transistor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17099787A JPS6415980A (en) 1987-07-10 1987-07-10 Field-effect transistor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS6415980A true JPS6415980A (en) 1989-01-19

Family

ID=15915199

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17099787A Pending JPS6415980A (en) 1987-07-10 1987-07-10 Field-effect transistor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS6415980A (en)

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