JPS6415980A - Field-effect transistor device and manufacture thereof - Google Patents
Field-effect transistor device and manufacture thereofInfo
- Publication number
- JPS6415980A JPS6415980A JP17099787A JP17099787A JPS6415980A JP S6415980 A JPS6415980 A JP S6415980A JP 17099787 A JP17099787 A JP 17099787A JP 17099787 A JP17099787 A JP 17099787A JP S6415980 A JPS6415980 A JP S6415980A
- Authority
- JP
- Japan
- Prior art keywords
- polycrystal silicon
- drain region
- source
- high concentration
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To enable the sufficient miniaturization, and the remarkable reduction of junction capacitance between a source/drain region and a substrate, by arranging the source/drain region of a MOSFET on the side surface almost perpendicular to the main surface of a semiconductor substrate. CONSTITUTION:By etching polycrystal silicon 22, 22A and 13, polycrystal silicon 22A, 13 containing As of high concentration are selectively etched and eliminated in a self alignment manner, and a polycrystal silicon film 22B is formed, which has a shape isolated on an SiO2 film 11. By applying the SiO2 film formed on the upper surface of a substrate 10B to a mask, phosphorus (P) ion 23 is implanted in the polycrystal silicon film 22, and heat-treating is performed. By this process, a low concentration source/drain region 24 composed of a low concentration n-type single crystal semiconductor layer is formed. Then As ion 23' is implanted, and heat-treating is performed. At the same time as forming a high concentration n-type source/drain region 25 composed of a high concentration n-type single crystal semiconductor layer, the film 22B is turned into a high concentration n-type polycrystal silicon film 22c.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17099787A JPS6415980A (en) | 1987-07-10 | 1987-07-10 | Field-effect transistor device and manufacture thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17099787A JPS6415980A (en) | 1987-07-10 | 1987-07-10 | Field-effect transistor device and manufacture thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6415980A true JPS6415980A (en) | 1989-01-19 |
Family
ID=15915199
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17099787A Pending JPS6415980A (en) | 1987-07-10 | 1987-07-10 | Field-effect transistor device and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6415980A (en) |
-
1987
- 1987-07-10 JP JP17099787A patent/JPS6415980A/en active Pending
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