JPS6413744A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6413744A
JPS6413744A JP62170202A JP17020287A JPS6413744A JP S6413744 A JPS6413744 A JP S6413744A JP 62170202 A JP62170202 A JP 62170202A JP 17020287 A JP17020287 A JP 17020287A JP S6413744 A JPS6413744 A JP S6413744A
Authority
JP
Japan
Prior art keywords
conductive material
groove
substrate
separated
embedded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62170202A
Other languages
Japanese (ja)
Other versions
JPH0795569B2 (en
Inventor
Masaki Ogiwara
Shizuo Sawada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Priority to JP62170202A priority Critical patent/JPH0795569B2/en
Publication of JPS6413744A publication Critical patent/JPS6413744A/en
Publication of JPH0795569B2 publication Critical patent/JPH0795569B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To make a device capable of delivering a potential to an embedded electrode without photoetching at the time of taking the embedded electrode out by forming the first conductive material which is embedded in a groove, and connecting the first and second conductive materials through a contact hole formed right above the groove. CONSTITUTION:A connecting section which delivers a potential to a plate electrode 105 has a square theta-shape in plane view, and a contact hole 131 is formed onto a groove of a part linking one side of a square theta-shaped groove 132 with the facing side thereagainst. When taking a contact for the conductive material 105 from another conductive material 133 formed onto the groove 132 opened on a substrate 100, the conductive material 105 makes contact with a conductive material 103 in the side wall of the groove as well as the Si substrate 100 itself. They must be separated electrically as well as in terms of pattern. The conductive material 103 located on the side wall of the groove, which is always left unpatterned, is separated from other circuits in terms of pattern. Then, the connecting section between the conductive material 133 and the substrate 100 is electrically separated by implanting impurities thereinto.
JP62170202A 1987-07-08 1987-07-08 Semiconductor device Expired - Fee Related JPH0795569B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62170202A JPH0795569B2 (en) 1987-07-08 1987-07-08 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62170202A JPH0795569B2 (en) 1987-07-08 1987-07-08 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS6413744A true JPS6413744A (en) 1989-01-18
JPH0795569B2 JPH0795569B2 (en) 1995-10-11

Family

ID=15900560

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62170202A Expired - Fee Related JPH0795569B2 (en) 1987-07-08 1987-07-08 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH0795569B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5196373A (en) * 1990-08-06 1993-03-23 Harris Corporation Method of making trench conductor and crossunder architecture

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61288461A (en) * 1985-06-17 1986-12-18 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor device
JPS632373A (en) * 1986-06-23 1988-01-07 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61288461A (en) * 1985-06-17 1986-12-18 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor device
JPS632373A (en) * 1986-06-23 1988-01-07 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5196373A (en) * 1990-08-06 1993-03-23 Harris Corporation Method of making trench conductor and crossunder architecture

Also Published As

Publication number Publication date
JPH0795569B2 (en) 1995-10-11

Similar Documents

Publication Publication Date Title
JPS6451665A (en) Semiconductor device
KR900001394B1 (en) Super high frequency intergrated circuit device
MY114267A (en) Metal-oxide semiconductor device
TW351861B (en) Semiconductor device and manufacturing process thereof
GB9018766D0 (en) Stacking of integrated circuits
WO1999010929A3 (en) A method of providing a vertical interconnect between thin film microelectronic devices
JPS6413744A (en) Semiconductor device
EP0865076A3 (en) Electrode structure for transistors, non-volatile memories and the like and method for fabricating said electrode
EP0275075A3 (en) Thin film transistor and method of making the same
JPS6482595A (en) Printed wiring board
EP0278072A3 (en) Permeable-base transistor
TW351015B (en) Semiconductor and its manufacturing method the invention relats to a semiconductor and its manufacturing method
JPS52141591A (en) Process of semiconductor device
JPS6435949A (en) Method of controlling electrically continuous state of mos transistor and integrated circuit obtained by applying the method
JPS57114287A (en) Semiconductor device
TW346679B (en) Semiconductor device with increased semiconductor capacitance and method of manufacturing the same
JPS5240972A (en) Packaging construction of semiconductor device
KR20000002731A (en) Semiconductor device production method
JPS57134965A (en) Semiconductor device
JPS5367381A (en) Semiconductor device
JPS5385158A (en) Electrode forming method of semiconductor device
JPS6447075A (en) Semiconductor device
JPS5615069A (en) Electronic device
JPS5335472A (en) Production of semiconductor unit
JPS6442155A (en) Semiconductor chip carrier package

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees